Disorder-induced localization in crystalline phase-change materials
10.1038/nmat2934
Crossref journal-article
Springer Science and Business Media LLC
Nature Materials (297)
Bibliography

Siegrist, T., Jost, P., Volker, H., Woda, M., Merkelbach, P., Schlockermann, C., & Wuttig, M. (2011). Disorder-induced localization in crystalline phase-change materials. Nature Materials, 10(3), 202–208.

Authors 7
  1. T. Siegrist (first)
  2. P. Jost (additional)
  3. H. Volker (additional)
  4. M. Woda (additional)
  5. P. Merkelbach (additional)
  6. C. Schlockermann (additional)
  7. M. Wuttig (additional)
References 47 Referenced 548
  1. Kittel, Ch. Einführung in die Festkörperphysik 12 Auflage (R. Oldenbourg, 1999). / Einführung in die Festkörperphysik by Ch Kittel (1999)
  2. Mott, N. F. Conduction in non-crystalline systems IV. Anderson localization in a disordered lattice. Phil. Mag. 22, 7–29 (1970). (10.1080/14786437008228147) / Phil. Mag. by NF Mott (1970)
  3. Ioffe, A. F. & Regel, A. R. in Progress in Semiconductors Vol. 4 (ed. Gibson, A. F.) 237–291 (Heywood, 1960). / Progress in Semiconductors Vol. 4 by AF Ioffe (1960)
  4. Rosenbaum, T. F., Andres, K., Thomas, G. A. & Bhatt, R. N. Sharp metal–insulator transition in a random solid. Phys. Rev. Lett. 45, 1723–1726 (1980). (10.1103/PhysRevLett.45.1723) / Phys. Rev. Lett. by TF Rosenbaum (1980)
  5. Abrahams, E., Anderson, P. W., Licciardello, D. C. & Ramakrishnan, T. V. Scaling theory of localization: Absence of quantum diffusion in two dimensions. Phys. Rev. Lett. 42, 673–676 (1979). (10.1103/PhysRevLett.42.673) / Phys. Rev. Lett. by E Abrahams (1979)
  6. Edwards, P. P., Ramakrishnan, T. V. & Rao, C. N. The metal–nonmetal transition: A global perspective. J. Phys. Chem. 99, 5228–5239 (1995). (10.1021/j100015a002) / J. Phys. Chem. by PP Edwards (1995)
  7. Mott, N. Review lecture: Metal–insulator transitions. Proc. R. Soc. Lond. A 382, 1–24 (1982). (10.1098/rspa.1982.0086) / Proc. R. Soc. Lond. A by N Mott (1982)
  8. Anderson, P. W. Absence of diffusion in certain random lattices. Phys. Rev. 109, 1492–1505 (1958). (10.1103/PhysRev.109.1492) / Phys. Rev. by PW Anderson (1958)
  9. Shklovskii, B. I. & Efros, A. L. Electronic Properties of Doped Semiconductors (Springer, 1984). (10.1007/978-3-662-02403-4) / Electronic Properties of Doped Semiconductors by BI Shklovskii (1984)
  10. Gaymann, A., Geserich, H. P. & Löhneysen, H. v. Temperature dependence of the far-infrared reflectance spectra of Si:P near the metal–insulator transition. Phys. Rev. B 52, 16486–16493 (1995). (10.1103/PhysRevB.52.16486) / Phys. Rev. B by A Gaymann (1995)
  11. Alexander, M. N. & Holcomb, D. F. Semiconductor-to-metal transition in n-type group IV semiconductors. Rev. Mod. Phys. 40, 815–829 (1968). (10.1103/RevModPhys.40.815) / Rev. Mod. Phys. by MN Alexander (1968)
  12. Belitz, D. & Kirkpatrick, T. R. The Anderson–Mott transition. Rev. Mod. Phys. 66, 261–380 (1994). (10.1103/RevModPhys.66.261) / Rev. Mod. Phys. by D Belitz (1994)
  13. Lee, P. A. & Ramakrishnan, T. V. Disordered electronic systems. Rev. Mod. Phys. 57, 287–337 (1985). / Rev. Mod. Phys. by PA Lee (1985)
  14. Baranovski, S. (ed.) Charge Transport in Disordered Solids with Applications in Electronics (John Wiley, 2006). (10.1002/0470095067)
  15. Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P. & Wuttig, M. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements. J. Appl. Phys. 87, 4130–4134 (2000). (10.1063/1.373041) / J. Appl. Phys. by I Friedrich (2000)
  16. Nirschl, T. et al. Write strategies for 2 and 4-bit multi-level phase-change memory. Tech. Dig. Int. Electron Devices Meet. 461–464 (2007). (10.1109/IEDM.2007.4418973)
  17. Bruns, G. et al. Nanosecond switching in GeTe phase change memory cells. Appl. Phys. Lett. 95, 043108 (2009). (10.1063/1.3191670) / Appl. Phys. Lett. by G Bruns (2009)
  18. Wang, W. J. et al. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells. Appl. Phys. Lett. 93, 043121 (2008). (10.1063/1.2963196) / Appl. Phys. Lett. by WJ Wang (2008)
  19. Wuttig, M. & Yamada, N. Phase-change materials for rewritable data storage. Nature Mater. 6, 824–832 (2007). (10.1038/nmat2009) / Nature Mater. by M Wuttig (2007)
  20. Bahl, S. K. & Chopra, K. L. Amorphous versus crystalline GeTe films. II. Optical properties. J. Appl. Phys. 40, 4940–4947 (1969). (10.1063/1.1657318) / J. Appl. Phys. by SK Bahl (1969)
  21. Njoroge, W. K., Wöltgens, H-W. & Wuttig, M. Density changes upon crystallization of Ge2Sb2.04Te4.74 films. J. Vac. Sci. Technol. A 20, 230–233 (2002). (10.1116/1.1430249) / J. Vac. Sci. Technol. A by WK Njoroge (2002)
  22. Kato, T. & Tanaka, K. Electronic properties of amorphous and crystalline Ge2Sb2Te5 films. Jpn. J. Appl. Phys. 44, 7340–7344 (2005). (10.1143/JJAP.44.7340) / Jpn. J. Appl. Phys. by T Kato (2005)
  23. Lee, B-S. et al. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases. J. Appl. Phys. 97, 093509 (2005). (10.1063/1.1884248) / J. Appl. Phys. by B-S Lee (2005)
  24. Zhang, T. et al. Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film. Thin Solid Films 516, 42–46 (2007). (10.1016/j.tsf.2007.04.047) / Thin Solid Films by T Zhang (2007)
  25. Prokhorov, E., Trapaga, G. & González-Hernández, J. Structural and electrical properties of Ge1Sb2Te4 face centered cubic phase. J. Appl. Phys. 104, 103712 (2008). (10.1063/1.3021462) / J. Appl. Phys. by E Prokhorov (2008)
  26. Mott, N. F. Conduction in glasses containing transition metal ions. J. Non-Cryst. Solids 1, 1–17 (1968). (10.1016/0022-3093(68)90002-1) / J. Non-Cryst. Solids by NF Mott (1968)
  27. Mott, N. F. Electrons in disordered structures. Adv. Phys. 16, 49–144 (1967). (10.1080/00018736700101265) / Adv. Phys. by NF Mott (1967)
  28. Overhof, H. & Thomas, P. Electronic Transport in Hydrogenated Amorphous Semiconductors (Springer, 1989). (10.1007/BFb0044936) / Electronic Transport in Hydrogenated Amorphous Semiconductors by H Overhof (1989)
  29. Gunnarsson, O., Calandra, M. & Han, J. E. Colloquium: Saturation of electrical resistivity. Rev. Mod. Phys. 75, 1085–1099 (2003). (10.1103/RevModPhys.75.1085) / Rev. Mod. Phys. by O Gunnarsson (2003)
  30. Klein, A. et al. Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4 . Phys. Rev. Lett. 100, 016402 (2008). (10.1103/PhysRevLett.100.016402) / Phys. Rev. Lett. by A Klein (2008)
  31. Welnic, W. et al. Unravelling the interplay of local structure and physical properties in phase-change materials. Nature Mater. 5, 56–62 (2006). (10.1038/nmat1539) / Nature Mater. by W Welnic (2006)
  32. Wuttig, M. et al. The role of vacancies and local distortions in the design of new phase-change materials. Nature Mater. 6, 122–128 (2007). (10.1038/nmat1807) / Nature Mater. by M Wuttig (2007)
  33. Shportko, K. et al. Resonant bonding in crystalline phase-change materials. Nature Mater. 7, 653–658 (2008). (10.1038/nmat2226) / Nature Mater. by K Shportko (2008)
  34. Lencer, D. et al. A map for phase-change materials. Nature Mater. 7, 972–977 (2008). (10.1038/nmat2330) / Nature Mater. by D Lencer (2008)
  35. Littlewood, P. B. Dielectric-constant of cubic IV–VI compounds. J. Phys. C 12, 4459–4468 (1979). (10.1088/0022-3719/12/21/013) / J. Phys. C by PB Littlewood (1979)
  36. Abrahams, E., Kravchenko, S. V. & Sarachik, M. P. Colloquium: Metallic behaviour and related phenomena in two dimensions. Rev. Mod. Phys 7 3, 251–266 (2001). (10.1103/RevModPhys.73.251) / Rev. Mod. Phys by E Abrahams (2001)
  37. Matsunaga, T. & Yamada, N. Structural investigation of GeSb2Te4: A high-speed phase-change material. Phys. Rev. B 69, 104111 (2004). (10.1103/PhysRevB.69.104111) / Phys. Rev. B by T Matsunaga (2004)
  38. Dynes, R. C. & Garno, J. P. Metal–insulator transition in granular aluminum. Phys. Rev. Lett. 46, 137–140 (1981). (10.1103/PhysRevLett.46.137) / Phys. Rev. Lett. by RC Dynes (1981)
  39. Edwards, P. P. & Sienko, M. J. Universality aspects of the metal–nonmetal transition in condensed media. Phys. Rev. B 17, 2575–2581 (1978). (10.1103/PhysRevB.17.2575) / Phys. Rev. B by PP Edwards (1978)
  40. DaSilva, J. L., Walsh, A. & Lee, H. Insights into the structure of the stable and metastable (GeTe)m(Sb2Te3)n compounds. Phys. Rev. B 78, 224111 (2008). (10.1103/PhysRevB.78.224111) / Phys. Rev. B by JL DaSilva (2008)
  41. Kim, J. J. et al. Electronic structure of amorphous and crystalline (GeTe)1−x(Sb2Te3)x investigated using hard X-ray photoemission spectroscopy. Phys. Rev. B 76, 115124 (2007). (10.1103/PhysRevB.76.115124) / Phys. Rev. B by JJ Kim (2007)
  42. Thouless, D. Anderson localization in the seventies and beyond. Int. J. Mod. Phys. B 24, 1507–1525 (2010). (10.1142/S0217979210064496) / Int. J. Mod. Phys. B by D Thouless (2010)
  43. Mott, N. F. The transition to the metallic state. Phil. Mag. 6, 287–309 (1961). (10.1080/14786436108243318) / Phil. Mag. by NF Mott (1961)
  44. Mooij, J. H. Electrical conduction in concentrated disordered transition metal alloys. Phys. Status Solidi A 17, 521–530 (1973). (10.1002/pssa.2210170217) / Phys. Status Solidi A by JH Mooij (1973)
  45. Tsuei, C. C. Nonuniversality of the Mooij correlation—the temperature coefficient of electrical resistivity of disordered metals. Phys. Rev. Lett. 57, 1943–1946 (1986). (10.1103/PhysRevLett.57.1943) / Phys. Rev. Lett. by CC Tsuei (1986)
  46. van der Pauw, L. J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. 13, 1–9 (1958). / Philips Res. Rep. by LJ van der Pauw (1958)
  47. Goldak, J., Barrett, C. S., Innes, D. & Youdelis, W. Structure of alpha GeTe. J. Chem. Phys. 44, 3323–3325 (1966). (10.1063/1.1727231) / J. Chem. Phys. by J Goldak (1966)
Dates
Type When
Created 14 years, 7 months ago (Jan. 9, 2011, 1:52 p.m.)
Deposited 3 years, 1 month ago (July 6, 2022, 3:55 p.m.)
Indexed 5 days, 1 hour ago (Aug. 19, 2025, 6:25 a.m.)
Issued 14 years, 7 months ago (Jan. 9, 2011)
Published 14 years, 7 months ago (Jan. 9, 2011)
Published Online 14 years, 7 months ago (Jan. 9, 2011)
Published Print 14 years, 5 months ago (March 1, 2011)
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@article{Siegrist_2011, title={Disorder-induced localization in crystalline phase-change materials}, volume={10}, ISSN={1476-4660}, url={http://dx.doi.org/10.1038/nmat2934}, DOI={10.1038/nmat2934}, number={3}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Siegrist, T. and Jost, P. and Volker, H. and Woda, M. and Merkelbach, P. and Schlockermann, C. and Wuttig, M.}, year={2011}, month=jan, pages={202–208} }