Crossref journal-article
Springer Science and Business Media LLC
Nature Materials (297)
Bibliography

Milliron, D. J., Raoux, S., Shelby, R. M., & Jordan-Sweet, J. (2007). Solution-phase deposition and nanopatterning of GeSbSe phase-change materials. Nature Materials, 6(5), 352–356.

Authors 4
  1. Delia J. Milliron (first)
  2. Simone Raoux (additional)
  3. Robert M. Shelby (additional)
  4. Jean Jordan-Sweet (additional)
References 28 Referenced 132
  1. Mansuripur, M. Rewritable optical disk technologies. Proc. SPIE 4109, 162–176 (2000). (10.1117/12.409216) / Proc. SPIE by M Mansuripur (2000)
  2. Yamada, N. Erasable phase-change optical materials. Mater. Res. Soc. Bull. 21, 48–50 (1996). (10.1557/S0883769400036368) / Mater. Res. Soc. Bull. by N Yamada (1996)
  3. Lankhorst, M. H. R., Ketelaars, B. W. S. M. M. & Wolters, R. A. M. Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Mater. 4, 347–352 (2005). (10.1038/nmat1350) / Nature Mater. by MHR Lankhorst (2005)
  4. Ovshinsky, S. R. Reversible electrical switching phenomena in disordered systems. Phys. Rev. Lett. 21, 1450–1453 (1968). (10.1103/PhysRevLett.21.1450) / Phys. Rev. Lett. by SR Ovshinsky (1968)
  5. Hudgens, S. & Johnson, B. Overview of phase-change chalcogenide nonvolatile memory technology. Mater. Res. Soc. Bull. 29, 829–832 (2004). (10.1557/mrs2004.236) / Mater. Res. Soc. Bull. by S Hudgens (2004)
  6. Milliron, D. J., Mitzi, D. B., Copel, M. & Murray, C. E. Solution processed metal chalcogenide films for p-type transistors. Chem. Mater. 18, 587–590 (2006). (10.1021/cm052300r) / Chem. Mater. by DJ Milliron (2006)
  7. Mitzi, D. B., Copel, M. & Chey, S. J. Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor. Adv. Mater. 17, 1285–1289 (2005). (10.1002/adma.200401443) / Adv. Mater. by DB Mitzi (2005)
  8. Mitzi, D. B., Copel, M. & Murray, C. E. High-mobility p-type transistor based on a spin-coated metal telluride semiconductor. Adv. Mater. 18, 2448–2452 (2006). (10.1002/adma.200600157) / Adv. Mater. by DB Mitzi (2006)
  9. Mitzi, D. B., Kosbar, L. L., Murray, C. E., Copel, M. & Afzali, A. High-mobility ultrathin semiconducting films prepared by spin coating. Nature 428, 299–303 (2004). (10.1038/nature02389) / Nature by DB Mitzi (2004)
  10. Kolobov, A. V. et al. Understanding the phase-change mechanism of rewritable optical media. Nature Mater. 3, 703–708 (2004). (10.1038/nmat1215) / Nature Mater. by AV Kolobov (2004)
  11. Welnic, W. et al. Unravelling the interplay of local structure and physical properties in phase-change materials. Nature Mater. 5, 56–62 (2006). (10.1038/nmat1539) / Nature Mater. by W Welnic (2006)
  12. Kang, M. J. et al. Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications. J. Appl. Phys. 98, 014904 (2005). (10.1063/1.1946197) / J. Appl. Phys. by MJ Kang (2005)
  13. Wuttig, M. et al. The quest for fast phase change materials. J. Magn. Magn. Mater. 249, 492–498 (2002). (10.1016/S0304-8853(02)00468-7) / J. Magn. Magn. Mater. by M Wuttig (2002)
  14. von Pieterson, L., Lankhorst, M. H. R., van Schijndel, M., Kuiper, A. E. T. & Roosen, J. H. J. Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview. J. Appl. Phys. 97, 083520 (2005). (10.1063/1.1868860) / J. Appl. Phys. by L von Pieterson (2005)
  15. Babeva, T., Dimitrov, D., Kitova, S. & Konstantinov, I. Optical properties of phase-change optical disks with SbxSe100−x films. Vacuum 58, 496–501 (2000). (10.1016/S0042-207X(00)00211-6) / Vacuum by T Babeva (2000)
  16. Dimitrov, D., Ollacarizqueta, M. A., Afonso, C. N. & Starbov, N. Crystallization kinetics of SbxSe100−x thin films. Thin Solid Films 280, 278–283 (1996). (10.1016/0040-6090(95)08205-0) / Thin Solid Films by D Dimitrov (1996)
  17. Barton, R., David, C. R., Rubin, K. & Lim, G. New phase change material for optical recording with short erase time. Appl. Phys. Lett. 48, 1255–1257 (1986). (10.1063/1.97031) / Appl. Phys. Lett. by R Barton (1986)
  18. El-Salam, F. A., Afify, M. A. & El-Wahabb, E. A. Switching phenomenon in amorphous Sb2Se3 . Vacuum 44, 17–22 (1993). (10.1016/0042-207X(93)90005-U) / Vacuum by FA El-Salam (1993)
  19. Katti, V. R., Govindacharyulu, P. A. & Bose, D. N. Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films. Thin Solid Films 14, 143–148 (1972). (10.1016/0040-6090(72)90376-8) / Thin Solid Films by VR Katti (1972)
  20. Salmon, P. S. & Petri, I. Structure of glassy and liquid GeSe2 . J. Phys. Condens. Matter 15, S1509–S1528 (2003). (10.1088/0953-8984/15/16/301) / J. Phys. Condens. Matter by PS Salmon (2003)
  21. Weidenhof, V., Pirch, N., Friedrich, I., Ziegler, S. & Wuttig, M. Minimum time for laser induced amorphization of Ge2Sb2Te5 films. J. Appl. Phys. 88, 657–664 (2000). (10.1063/1.373717) / J. Appl. Phys. by V Weidenhof (2000)
  22. Coombs, J. H., Jongenelis, A. P. J. M., Vanesspiekman, W. & Jacobs, B. A. J. Laser-induced crystallization phenomena in GeTe-based alloys. 1. Characterization of nucleation and growth. J. Appl. Phys. 78, 4906–4917 (1995). (10.1063/1.359779) / J. Appl. Phys. by JH Coombs (1995)
  23. Weidenhof, V., Friedrich, I., Ziegler, S. & Wuttig, M. Laser induced crystallization of amorphous Ge2Sb2Te5 films. J. Appl. Phys. 89, 3168–3176 (2001). (10.1063/1.1351868) / J. Appl. Phys. by V Weidenhof (2001)
  24. Sandhu, G. S. Process technology and integration challenges for high performance interconnects. Thin Solid Films 320, 1–9 (1998). (10.1016/S0040-6090(97)01057-2) / Thin Solid Films by GS Sandhu (1998)
  25. Guarini, K. W., Black, C. T., Milkove, K. R. & Sandstrom, R. L. Nanoscale patterning using self-assembled polymers for semiconductor applications. J. Vac. Sci. Technol. 19, 2784–2788 (2001). (10.1116/1.1421551) / J. Vac. Sci. Technol. by KW Guarini (2001)
  26. Xu, T. et al. Block copolymer surface reconstruction: A reversible route to nanoporous films. Adv. Funct. Mater. 13, 698–702 (2003). (10.1002/adfm.200304374) / Adv. Funct. Mater. by T Xu (2003)
  27. Martens, H. C. F., Vlutters, R. & Prangsma, J. C. Thickness dependent crystallization speed in thin phase change layers used for optical recording. J. Appl. Phys. 95, 3977–3983 (2004). (10.1063/1.1667606) / J. Appl. Phys. by HCF Martens (2004)
  28. Mitzi, D. B. et al. Solution-based processing of the phase-change material KSb5S8 . Chem. Mater. 18, 6278–6282 (2006). (10.1021/cm0619510) / Chem. Mater. by DB Mitzi (2006)
Dates
Type When
Created 18 years, 4 months ago (April 8, 2007, 1:14 p.m.)
Deposited 3 years, 1 month ago (July 6, 2022, 3:29 p.m.)
Indexed 3 months, 1 week ago (May 15, 2025, 2:24 a.m.)
Issued 18 years, 4 months ago (April 8, 2007)
Published 18 years, 4 months ago (April 8, 2007)
Published Online 18 years, 4 months ago (April 8, 2007)
Published Print 18 years, 3 months ago (May 1, 2007)
Funders 0

None

@article{Milliron_2007, title={Solution-phase deposition and nanopatterning of GeSbSe phase-change materials}, volume={6}, ISSN={1476-4660}, url={http://dx.doi.org/10.1038/nmat1887}, DOI={10.1038/nmat1887}, number={5}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Milliron, Delia J. and Raoux, Simone and Shelby, Robert M. and Jordan-Sweet, Jean}, year={2007}, month=apr, pages={352–356} }