Crossref
journal-article
Springer Science and Business Media LLC
Nature Materials (297)
References
25
Referenced
237
-
Ieong, M., Doris, B., Kedzierski, J., Rim, K. & Yang, M. Silicon device scaling to the sub-10-nm regime. Science 306, 2057–2060 (2004).
(
10.1126/science.1100731
) / Science by M Ieong (2004) -
Rim, K., Hoyt, J. L. & Gibbons, J. F. Fabrication and analysis of deep submicron strained-Si N-MOSFET’s. IEEE Trans. Electron Devices 47, 1406–1415 (2000).
(
10.1109/16.848284
) / IEEE Trans. Electron Devices by K Rim (2000) -
Mooney, P. M. & Chu, J. O. Heteroepitaxy and high-speed microelectronics. Annu. Rev. Mater. Sci. 30, 335–362 (2000).
(
10.1146/annurev.matsci.30.1.335
) / Annu. Rev. Mater. Sci. by PM Mooney (2000) -
Fitzgerald, E. A. et al. Relaxed GexSi1−x structures for III-V integration with Si and high mobility two-dimensional electron gases in Si. J. Vac. Sci. Technol. B 10, 1807–1819 (1992).
(
10.1116/1.586204
) / J. Vac. Sci. Technol. B by EA Fitzgerald (1992) -
Ismail, K. et al. Identification of a mobility-limiting scattering mechanism iin modulation-doped Si/SiGe heterostructures. Phys. Rev. Lett. 73, 3447–3450 (1994).
(
10.1103/PhysRevLett.73.3447
) / Phys. Rev. Lett. by K Ismail (1994) -
Monroe, D., Xie, Y. H., Fitzgerald, E. A., Silverman, P. J. & Watson, G. P. Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures. J. Vac. Sci. Technol. B 11, 1731–1737 (1993).
(
10.1116/1.586471
) / J. Vac. Sci. Technol. B by D Monroe (1993) -
Lo, Y. H. New approach to grow pseudomorphic structures over the critical thickness. Appl. Phys. Lett. 59, 2311–2313 (1991).
(
10.1063/1.106053
) / Appl. Phys. Lett. by YH Lo (1991) -
Brown, A. S. Compliant substrate technology: Status and prospects. J. Vac. Sci. Technol. B 16, 2308–2312 (1998).
(
10.1116/1.590166
) / J. Vac. Sci. Technol. B by AS Brown (1998) -
Hobart, K. D. et al. Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides. J. Electron. Mater. 29, 897–900 (2000).
(
10.1007/s11664-000-0177-2
) / J. Electron. Mater. by KD Hobart (2000) -
Yin, H. et al. Buckling suppression of SiGe islands on compliant substrates. J. Appl. Phys. 94, 6875–6882 (2003).
(
10.1063/1.1621069
) / J. Appl. Phys. by H Yin (2003) -
Ejeckam, F. E., Lo, Y. H., Subramanian, S., Hou, H. Q. & Hammons, B. E. Lattice engineered compliant substrate for defect-free heteroepitaxial growth. Appl. Phys. Lett. 70, 1685–1687 (1997).
(
10.1063/1.118669
) / Appl. Phys. Lett. by FE Ejeckam (1997) -
Mooney, P. M., Cohen, G. M., Chu, J. O. & Murray, C. E. Elastic strain relaxation in free-standing SiGe/Si structures. Appl. Phys. Lett. 84, 1093–1095 (2004).
(
10.1063/1.1646464
) / Appl. Phys. Lett. by PM Mooney (2004) -
Jones, A. M. et al. Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate. Appl. Phys. Lett. 74, 1000–1002 (1999).
(
10.1063/1.123435
) / Appl. Phys. Lett. by AM Jones (1999) -
Cohen, G. M., Mooney, P. M., Paruchuri, V. K. & Hovel, H. J. Dislocation-free strained silicon-on-silicon by in-place bonding. Appl. Phys. Lett. 86, 251902 (2005).
(
10.1063/1.1949284
) / Appl. Phys. Lett. by GM Cohen (2005) -
Damlencourt, J.-F. et al. Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fuly relaxed materials. Jpn J. Appl. Phys. 38, L996–L999 (1999).
(
10.1143/JJAP.38.L996
) / Jpn J. Appl. Phys. by J-F Damlencourt (1999) -
Boudaa, M. et al. Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates. J. Electron. Mater. 33, 833–839 (2004).
(
10.1007/s11664-004-0250-3
) / J. Electron. Mater. by M Boudaa (2004) -
Demeester, P., Pollentier, I., De Dobbelaere, P., Brys, C. & Van Daele, P. Epitaxial lift-off and its applications. Semicond. Sci. Technol. 8, 1124–1135 (1993).
(
10.1088/0268-1242/8/6/021
) / Semicond. Sci. Technol. by P Demeester (1993) -
Menard, E., Lee, K. J., Khang, D.-Y., Nuzzo, R. G. & Rogers, J. A. A printable form of silicon for high performance thin film transistors plastic substrates. Appl. Phys. Lett. 84, 5398–5400 (2004).
(
10.1063/1.1767591
) / Appl. Phys. Lett. by E Menard (2004) -
Yablonovitch, E., Hwang, D. M., Gmitter, T. J., Forez, L. T. & Harbison, J. P. Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates. Appl. Phys. Lett. 56, 2419–2421 (1990).
(
10.1063/1.102896
) / Appl. Phys. Lett. by E Yablonovitch (1990) -
Langdo, T. A. et al. SiGe-free strained Si on insulator by wafer bonding and layer transfer. Appl. Phys. Lett. 82, 4256–4258 (2003).
(
10.1063/1.1581371
) / Appl. Phys. Lett. by TA Langdo (2003) -
Moriceau, H. et al. New layer transfers obtained by the SmartCut process. J. Electron. Mater. 32, 829–835 (2003).
(
10.1007/s11664-003-0196-x
) / J. Electron. Mater. by H Moriceau (2003) - Freund, L. B. & Suresh, S. Thin Film Materials (Cambridge Univ. Press, Cambridge, 2003). / Thin Film Materials by LB Freund (2003)
-
van Houten, H., Williamson, J. G., Broekaart, M. E. I., Foxon, C. T. & Harris, J. J. Magnetoresistance in a GaAs/AlxGa1−xAs heterostructure with double subband occupancy. Phys. Rev. B 37, 2756–2758 (1988).
(
10.1103/PhysRevB.37.2756
) / Phys. Rev. B by H van Houten (1988) -
Beenakker, C. W. J. & van Houten, H. Quantum transport in semiconductor nanosturctures. Solid State Phys. 44, 1 (1991).
(
10.1016/S0081-1947(08)60091-0
) / Solid State Phys. by CWJ Beenakker (1991) -
Schäffler, F. High-mobility Si and Ge structures. Semicond. Sci. Technol. 12, 1515–1549 (1997).
(
10.1088/0268-1242/12/12/001
) / Semicond. Sci. Technol. by F Schäffler (1997)
Dates
Type | When |
---|---|
Created | 19 years, 4 months ago (April 9, 2006, 1:45 p.m.) |
Deposited | 3 years, 1 month ago (July 6, 2022, 2:14 p.m.) |
Indexed | 13 hours, 55 minutes ago (Aug. 29, 2025, 6:30 a.m.) |
Issued | 19 years, 4 months ago (April 9, 2006) |
Published | 19 years, 4 months ago (April 9, 2006) |
Published Online | 19 years, 4 months ago (April 9, 2006) |
Published Print | 19 years, 3 months ago (May 1, 2006) |
@article{Roberts_2006, title={Elastically relaxed free-standing strained-silicon nanomembranes}, volume={5}, ISSN={1476-4660}, url={http://dx.doi.org/10.1038/nmat1606}, DOI={10.1038/nmat1606}, number={5}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Roberts, Michelle M. and Klein, Levente J. and Savage, Donald E. and Slinker, Keith A. and Friesen, Mark and Celler, George and Eriksson, Mark A. and Lagally, Max G.}, year={2006}, month=apr, pages={388–393} }