DOI: 10.1038/nmat1000. Atomic layer deposition of transition metals

Atomic layer deposition of transition metals

10.1038/nmat1000

Crossref journal-article

Springer Science and Business Media LLC

Nature Materials (297)

Bibliography

Lim, B. S., Rahtu, A., & Gordon, R. G. (2003). Atomic layer deposition of transition metals. Nature Materials, 2(11), 749â754.

Authors 3

Booyong S. Lim (first)
Antti Rahtu (additional)
Roy G. Gordon (additional)

References 19 Referenced 590

Kingon, A.I., Maria, J.-P. & Streiffer, S.K. Alternative dielectrics to silicon dioxide for memory and logic devices. Nature 406, 1032–1038 (2000). (10.1038/35023243) / Nature by AI Kingon (2000)
Suntola, T. & Simpson, M. (eds) Atomic Layer Epitaxy (Blackie, Glasgow, 1990). (10.1007/978-94-009-0389-0) / Atomic Layer Epitaxy by T Suntola (1990)
Hausmann, D., Becker, J., Wang, S. & Gordon, R.G. Rapid vapor deposition of highly conformal silica nanolaminates. Science 298, 402–406 (2002). (10.1126/science.1073552) / Science by D Hausmann (2002)
Gordon, R.G., Hausmann, D., Kim, E. & Shepard, J. A kinetic model for step coverage by alternating layer deposition (ALD) in narrow holes or trenches. Chem. Vapor Depos. 9, 73–78 (2003). (10.1002/cvde.200390005) / Chem. Vapor Depos. by RG Gordon (2003)
Ritala, M. & Leskelä, M. in Handbook of Thin Film Materials vol. 1 (ed. Nalwa, H. S.) 103–159 (Academic, New York, 2001). / Handbook of Thin Film Materials by M Ritala (2001)
Klaus, J.W., Ferro, S.J. & George, S.M. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction. Thin Solid Films 360, 145–153 (2000). (10.1016/S0040-6090(99)01076-7) / Thin Solid Films by JW Klaus (2000)
Elam, J.W., Nelson, C.E., Grubbs, R.K. & George, S.M. Kinetics of the WF6 and Si2H6 surface reactions during tungsten layer deposition. Surf. Sci. 479, 121–135 (2001). (10.1016/S0039-6028(01)00969-4) / Surf. Sci. by JW Elam (2001)
Aaltonen, T., Alén, P., Ritala, M. & Leskelä, M. Ruthenium thin films grown by atomic layer deposition. Chem. Vapor Depos. 9, 45–49 (2003). (10.1002/cvde.200290007) / Chem. Vapor Depos. by T Aaltonen (2003)
Aaltonen, T., Ritala, M., Sajavaara, T., Keinonen, J. & Leskelä, M. Atomic layer deposition of platinum thin films. Chem. Mater. 15, 1924–1928 (2003). (10.1021/cm021333t) / Chem. Mater. by T Aaltonen (2003)
Mårtensson, P. & Carlsson, J.-O. Atomic layer epitaxy of copper. J. Electrochem. Soc. 145, 2926–2931 (1998). (10.1149/1.1838738) / J. Electrochem. Soc. by P Mårtensson (1998)
Kim, H. & Rossnagel, S.M. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition. J. Vacuum Sci. Technol. A 20, 802–808 (2002). (10.1116/1.1469009) / J. Vacuum Sci. Technol. A by H Kim (2002)
Rossnagel, S.M., Sherman, A. & Turner, F. Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers. J. Vacuum Sci. Technol. B 18, 2016–2020 (2000). (10.1116/1.1305809) / J. Vacuum Sci. Technol. B by SM Rossnagel (2000)
Kim, H., Cabral, C. Jr, Lavoie, C. & Rossnagel, S.M. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition. J. Vacuum Sci. Technol. B 20, 1321–1326 (2002). (10.1116/1.1486233) / J. Vacuum Sci. Technol. B by H Kim (2002)
Lee, Y.J. & Kang, S.-W. Study on the characteristics of aluminum thin films prepared by atomic layer deposition. J. Vacuum Sci. Technol. A 20, 1983–1988 (2002). (10.1116/1.1513636) / J. Vacuum Sci. Technol. A by YJ Lee (2002)
Coles, M.P., Swensen, D.C., Jordan, R.F. & Young, V.G. Jr. Synthesis and structures of mono- and bis(amidinate) complexes of aluminum. Organometallics 16, 5183–5194 (1997). (10.1021/om9706323) / Organometallics by MP Coles (1997)
Lim, B.S., Rahtu, A., Park, J.-S. & Gordon, R.G. Synthesis and characterization of volatile, thermally stable and reactive transition metal amidinates. Inorg. Chem. (in the press).
Becker, J.S. & Gordon, R.G. Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia. Appl. Phys. Lett. 82, 2239–2241 (2003). (10.1063/1.1565699) / Appl. Phys. Lett. by JS Becker (2003)
Hayward, D.O. & Trapnell, B.M.W. Chemisorption (Butterworths, London, 1964). / Chemisorption by DO Hayward (1964)
Henrich, V.E. & Cox, P.A. The Surface Science of Metal Oxides (Cambridge Univ. Press, 1994). / The Surface Science of Metal Oxides by VE Henrich (1994)

Dates

Type	When
Created	21 years, 10 months ago (Oct. 26, 2003, 2:33 p.m.)
Deposited	3 years, 1 month ago (July 6, 2022, 3:14 p.m.)
Indexed	6 days, 4 hours ago (Aug. 23, 2025, 9:41 p.m.)
Issued	21 years, 10 months ago (Oct. 26, 2003)
Published	21 years, 10 months ago (Oct. 26, 2003)
Published Online	21 years, 10 months ago (Oct. 26, 2003)
Published Print	21 years, 9 months ago (Nov. 1, 2003)

Funders 0

None

BibTeX

@article{Lim_2003, title={Atomic layer deposition of transition metals}, volume={2}, ISSN={1476-4660}, url={http://dx.doi.org/10.1038/nmat1000}, DOI={10.1038/nmat1000}, number={11}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Lim, Booyong S. and Rahtu, Antti and Gordon, Roy G.}, year={2003}, month=oct, pages={749–754} }

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