Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide
10.1038/ncomms8509
Crossref journal-article
Springer Science and Business Media LLC
Nature Communications (297)
Abstract

AbstractThe layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN–Al2O3–MoS2 and GaN–Al2O3–MoS2–Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multilayer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multilayer MoS2 is comparable to or higher than that in monolayers. This strong electroluminescence can be attributed to electric-field-induced carrier redistribution from the lowest energy points (indirect bandgap) to higher energy points (direct bandgap) in k-space. The electric-field-induced electroluminescence is general for other layered materials including WSe2 and can open up a new pathway towards transition metal dichalcogenide-based optoelectronic devices.

Bibliography

Li, D., Cheng, R., Zhou, H., Wang, C., Yin, A., Chen, Y., Weiss, N. O., Huang, Y., & Duan, X. (2015). Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide. Nature Communications, 6(1).

Authors 9
  1. Dehui Li (first)
  2. Rui Cheng (additional)
  3. Hailong Zhou (additional)
  4. Chen Wang (additional)
  5. Anxiang Yin (additional)
  6. Yu Chen (additional)
  7. Nathan O. Weiss (additional)
  8. Yu Huang (additional)
  9. Xiangfeng Duan (additional)
References 41 Referenced 148
  1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005). (10.1073/pnas.0502848102) / Proc. Natl Acad. Sci. USA by KS Novoselov (2005)
  2. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010). (10.1103/PhysRevLett.105.136805) / Phys. Rev. Lett. by KF Mak (2010)
  3. Geim, A. & Grigorieva, I. Van der Waals heterostructures. Nature 499, 419–425 (2013). (10.1038/nature12385) / Nature by A Geim (2013)
  4. Yu, W. J. et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 8, 952–958 (2013). (10.1038/nnano.2013.219) / Nat. Nanotechnol. by WJ Yu (2013)
  5. Lopez-Sanchez, O. et al. Light generation and harvesting in a van der Waals heterostructure. ACS Nano 8, 3042–3048 (2014). (10.1021/nn500480u) / ACS Nano by O Lopez-Sanchez (2014)
  6. Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 3, 887 (2012). (10.1038/ncomms1882) / Nat. Commun. by T Cao (2012)
  7. Tongay, S. et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 5, 3252 (2014). (10.1038/ncomms4252) / Nat. Commun. by S Tongay (2014)
  8. Yu, W. J. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246–252 (2013). (10.1038/nmat3518) / Nat. Mater. by WJ Yu (2013)
  9. Jones, A. M. et al. Spin-layer locking effects in optical orientation of exciton spin in bilayer WSe2 . Nat. Phys. 10, 130–134 (2014). (10.1038/nphys2848) / Nat. Phys. by AM Jones (2014)
  10. Wu, S. et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2 . Nat. Phys. 9, 149–153 (2013). (10.1038/nphys2524) / Nat. Phys. by S Wu (2013)
  11. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013). (10.1038/nchem.1589) / Nat. Chem. by M Chhowalla (2013)
  12. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012). (10.1038/nnano.2012.193) / Nat. Nanotechnol. by QH Wang (2012)
  13. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). (10.1038/nnano.2010.279) / Nat. Nanotechnol. by B Radisavljevic (2011)
  14. Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A. & Kis, A. Ultrasensitive photodetectors based on monolayer MoS2 . Nat. Nanotechnol. 8, 497–501 (2013). (10.1038/nnano.2013.100) / Nat. Nanotechnol. by O Lopez-Sanchez (2013)
  15. Roy, K. et al. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8, 826–830 (2013). (10.1038/nnano.2013.206) / Nat. Nanotechnol. by K Roy (2013)
  16. Xiao, D., Liu, G., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012). (10.1103/PhysRevLett.108.196802) / Phys. Rev. Lett. by D Xiao (2012)
  17. Mak, K. F. et al. Tightly bound trions in monolayer MoS2 . Nat. Mater. 12, 207–211 (2013). (10.1038/nmat3505) / Nat. Mater. by KF Mak (2013)
  18. Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311–1314 (2013). (10.1126/science.1235547) / Science by L Britnell (2013)
  19. Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947–950 (2012). (10.1126/science.1218461) / Science by L Britnell (2012)
  20. Withers, F. et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14, 301–306 (2015). (10.1038/nmat4205) / Nat. Mater. by F Withers (2015)
  21. Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-Herrero, P. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 9, 262–267 (2014). (10.1038/nnano.2014.25) / Nat. Nanotechnol. by BWH Baugher (2014)
  22. Pospischil, A., Furchi, M. M. & Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p-n diode. Nat. Nanotechnol. 9, 257–261 (2014). (10.1038/nnano.2014.14) / Nat. Nanotechnol. by A Pospischil (2014)
  23. Ross, J. S. et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nanotechnol. 9, 268–272 (2014). (10.1038/nnano.2014.26) / Nat. Nanotechnol. by JS Ross (2014)
  24. Jo, S., Ubrig, N., Berger, H., Kuzmenko, A. B. & Morpurgo, A. F. Mono- and bilayer WS2 light-emitting transistors. Nano Lett. 14, 2019–2025 (2014). (10.1021/nl500171v) / Nano Lett. by S Jo (2014)
  25. Zhang, Y., Oka, T., Suzuki, R., Ye, J. & Iwasa, Y. Electrically switchable chiral light-emitting transistor. Science 344, 725–728 (2014). (10.1126/science.1251329) / Science by Y Zhang (2014)
  26. Sundaram, R. S. et al. Electroluminescence in single layer MoS2 . Nano Lett. 13, 1416–1421 (2013). (10.1021/nl400516a) / Nano Lett. by RS Sundaram (2013)
  27. Cheng, R. et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p–n diodes. Nano Lett. 14, 5590–5597 (2014). (10.1021/nl502075n) / Nano Lett. by R Cheng (2014)
  28. Yamakoshi, S., Sanada, T., Wada, O., Umebu, I. & Sakurai, T. Direct observation of electron leakage in InGaAsP/InP double heterostructure. Appl. Phys. Lett. 40, 144–146 (1982). (10.1063/1.93017) / Appl. Phys. Lett. by S Yamakoshi (1982)
  29. Min, K. W. et al. White-light emitting diode array of p+-Si/aligned n-SnO2 nanowires heterojunctions. Adv. Funct. Mater. 21, 119–124 (2011). (10.1002/adfm.201001678) / Adv. Funct. Mater. by KW Min (2011)
  30. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010). (10.1021/nl903868w) / Nano Lett. by A Splendiani (2010)
  31. Fukai, Y. K., Matsuoka, Y. & Furuta, T. Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence. Appl. Phys. Lett. 63, 340–342 (1993). (10.1063/1.110036) / Appl. Phys. Lett. by YK Fukai (1993)
  32. Li, D., Zhang, J., Zhang, Q. & Xiong, Q. Electric-field-dependent photoconductivity in CdS nanowires and nanobelts: exciton ionization, Franz–Keldysh, and Stark effects. Nano Lett. 12, 2993–2999 (2012). (10.1021/nl300749z) / Nano Lett. by D Li (2012)
  33. Pankove, J. I. Optical Processes in Semiconductors Courier Dover Publications (2012).
  34. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices John Wiley & Sons (2006). (10.1002/0470068329)
  35. Yamada, H.-P. & Krasheninnikov, A. V. Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles. Phys. Rev. B 86, 241201 (2012). (10.1103/PhysRevB.86.241201) / Phys. Rev. B by H-P Yamada (2012)
  36. Yamada, Y. A study on nonstationary electron transport in submicron BP-SAINT GaAs MESFETs using an ensemble Monte Carlo simulation. IEICE Trans. E74-C, 1648–1655 (1991). / IEICE Trans. by Y Yamada (1991)
  37. Peelaers, H. & Van de Walle, C. G. Effects of strain on band structure and effective masses in MoS2 . Phys. Rev. B 86, 241401 (2012). (10.1103/PhysRevB.86.241401) / Phys. Rev. B by H Peelaers (2012)
  38. Basu, P. K. Theory of Optical Processes in Semiconductors: Bulk and Microstructures Oxford Univ. Press (1997).
  39. Yun, W. S., Han, S., Hong, S. C., Kim, I. G. & Lee, J. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M=Mo, W; X=S, Se, Te). Phys. Rev. B 85, 033305 (2012). (10.1103/PhysRevB.85.033305) / Phys. Rev. B by WS Yun (2012)
  40. Nie, Z. et al. Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2 . ACS Nano 8, 10931–10940 (2014). (10.1021/nn504760x) / ACS Nano by Z Nie (2014)
  41. Shi, H. et al. Exciton dynamics in suspended monoslayer and few-layer MoS2 2D crystals. ACS Nano 7, 1072–1080 (2013). (10.1021/nn303973r) / ACS Nano by H Shi (2013)
Dates
Type When
Created 10 years, 2 months ago (July 1, 2015, 8:20 a.m.)
Deposited 2 years, 7 months ago (Jan. 5, 2023, 6:24 a.m.)
Indexed 1 week, 6 days ago (Aug. 19, 2025, 6:16 a.m.)
Issued 10 years, 2 months ago (July 1, 2015)
Published 10 years, 2 months ago (July 1, 2015)
Published Online 10 years, 2 months ago (July 1, 2015)
Funders 0

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@article{Li_2015, title={Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide}, volume={6}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms8509}, DOI={10.1038/ncomms8509}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Li, Dehui and Cheng, Rui and Zhou, Hailong and Wang, Chen and Yin, Anxiang and Chen, Yu and Weiss, Nathan O. and Huang, Yu and Duan, Xiangfeng}, year={2015}, month=jul }