Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
10.1038/ncomms7088
Crossref journal-article
Springer Science and Business Media LLC
Nature Communications (297)
Bibliography

Chen, X., Wu, Z., Xu, S., Wang, L., Huang, R., Han, Y., Ye, W., Xiong, W., Han, T., Long, G., Wang, Y., He, Y., Cai, Y., Sheng, P., & Wang, N. (2015). Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures. Nature Communications, 6(1).

Authors 15
  1. Xiaolong Chen (first)
  2. Zefei Wu (additional)
  3. Shuigang Xu (additional)
  4. Lin Wang (additional)
  5. Rui Huang (additional)
  6. Yu Han (additional)
  7. Weiguang Ye (additional)
  8. Wei Xiong (additional)
  9. Tianyi Han (additional)
  10. Gen Long (additional)
  11. Yang Wang (additional)
  12. Yuheng He (additional)
  13. Yuan Cai (additional)
  14. Ping Sheng (additional)
  15. Ning Wang (additional)
References 47 Referenced 194
  1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005). (10.1073/pnas.0502848102) / Proc. Natl Acad. Sci. USA by KS Novoselov (2005)
  2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). (10.1038/nnano.2010.279) / Nat. Nanotechnol. by B Radisavljevic (2011)
  3. Radisavljevic, B. & Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2 . Nat. Mater. 12, 815–820 (2013). (10.1038/nmat3687) / Nat. Mater. by B Radisavljevic (2013)
  4. Baugher, B. W. H., Churchill, H. O. H., Yang, Y. F. & Jarillo-Herrero, P. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2 . Nano Lett. 13, 4212–4216 (2013). (10.1021/nl401916s) / Nano Lett. by BWH Baugher (2013)
  5. Schmidt, H. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909–1913 (2014). (10.1021/nl4046922) / Nano Lett. by H Schmidt (2014)
  6. Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012). (10.1126/science.1228006) / Science by JT Ye (2012)
  7. Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3, 1011 (2012). (10.1038/ncomms2018) / Nat. Commun. by S Kim (2012)
  8. Lee, G. H. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 7, 7931–7936 (2013). (10.1021/nn402954e) / ACS Nano by GH Lee (2013)
  9. Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311–1314 (2013). (10.1126/science.1235547) / Science by L Britnell (2013)
  10. Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A. & Kis, A. Ultrasensitive photodetectors based on monolayer MoS2 . Nat. Nanotechnol. 8, 497–501 (2013). (10.1038/nnano.2013.100) / Nat. Nanotechnol. by O Lopez-Sanchez (2013)
  11. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011). (10.1021/nl2018178) / Nano Lett. by Y Yoon (2011)
  12. Ghatak, S., Pal, A. N. & Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 5, 7707–7712 (2011). (10.1021/nn202852j) / ACS Nano by S Ghatak (2011)
  13. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012). (10.1038/nnano.2012.193) / Nat. Nanotechnol. by QH Wang (2012)
  14. Zhu, W. J. et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 5, 3087 (2014). (10.1038/ncomms4087) / Nat. Commun. by WJ Zhu (2014)
  15. Liu, K. K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538–1544 (2012). (10.1021/nl2043612) / Nano Lett. by KK Liu (2012)
  16. Zhan, Y. J., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966–971 (2012). (10.1002/smll.201102654) / Small by YJ Zhan (2012)
  17. Mak, K. F., He, K. L., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 7, 494–498 (2012). (10.1038/nnano.2012.96) / Nat. Nanotechnol. by KF Mak (2012)
  18. Zeng, H. L., Dai, J. F., Yao, W., Xiao, D. & Cui, X. D. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490–493 (2012). (10.1038/nnano.2012.95) / Nat. Nanotechnol. by HL Zeng (2012)
  19. Zhou, W. et al. Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 13, 2615–2622 (2013). (10.1021/nl4007479) / Nano Lett. by W Zhou (2013)
  20. Qiu, H. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 4, 2642 (2013). (10.1038/ncomms3642) / Nat. Commun. by H Qiu (2013)
  21. Chen, X. et al. Electron-electron interactions in monolayer graphene quantum capacitors. Nano Res. 6, 619–626 (2013). (10.1007/s12274-013-0338-2) / Nano Res. by X Chen (2013)
  22. Yu, G. L. et al. Interaction phenomena in graphene seen through quantum capacitance. Proc. Natl Acad. Sci. USA 110, 3282–3286 (2013). (10.1073/pnas.1300599110) / Proc. Natl Acad. Sci. USA by GL Yu (2013)
  23. Hunt, B. et al. Massive dirac fermions and Hofstadter butterfly in a van der Waals heterostructure. Science 340, 1427–1430 (2013). (10.1126/science.1237240) / Science by B Hunt (2013)
  24. Wang, L. et al. Negative quantum capacitance induced by midgap states in single-layer graphene. Sci. Rep. 3, 2041 (2013). (10.1038/srep02041) / Sci. Rep. by L Wang (2013)
  25. Chen, X. L. et al. Negative compressibility observed in graphene containing resonant impurities. Appl. Phys. Lett. 102, 203103 (2013). (10.1063/1.4807394) / Appl. Phys. Lett. by XL Chen (2013)
  26. Wang, L. et al. Detection of resonant impurities in graphene by quantum capacitance measurement. Phys. Rev. B 89, 075410 (2014). (10.1103/PhysRevB.89.075410) / Phys. Rev. B by L Wang (2014)
  27. Xia, J., Chen, F., Li, J. & Tao, N. Measurement of the quantum capacitance of graphene. Nat. Nanotechnol. 4, 505–509 (2009). (10.1038/nnano.2009.177) / Nat. Nanotechnol. by J Xia (2009)
  28. He, S. & Xie, X. C. New liquid phase and metal-insulator transition in Si MOSFETs. Phys. Rev. Lett. 80, 3324–3327 (1998). (10.1103/PhysRevLett.80.3324) / Phys. Rev. Lett. by S He (1998)
  29. Zhang, Z. Q. & Sheng, P. Quantum-percolation model of electronic transport in 2-dimensional granular metal-films. Phys. Rev. B 44, 3304–3315 (1991). (10.1103/PhysRevB.44.3304) / Phys. Rev. B by ZQ Zhang (1991)
  30. Meir, Y. Percolation-type description of the metal-insulator transition in two dimensions. Phys. Rev. Lett. 83, 3506–3509 (1999). (10.1103/PhysRevLett.83.3506) / Phys. Rev. Lett. by Y Meir (1999)
  31. Das Sarma, S. et al. Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system. Phys. Rev. Lett. 94, 136401 (2005). (10.1103/PhysRevLett.94.136401) / Phys. Rev. Lett. by S Das Sarma (2005)
  32. Manfra, M. J. et al. Transport and percolation in a low-density high-mobility two-dimensional hole system. Phys. Rev. Lett. 99, 236402 (2007). (10.1103/PhysRevLett.99.236402) / Phys. Rev. Lett. by MJ Manfra (2007)
  33. Adam, S., Cho, S., Fuhrer, M. S. & Das Sarma, S. Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons. Phys. Rev. Lett. 101, 046404 (2008). (10.1103/PhysRevLett.101.046404) / Phys. Rev. Lett. by S Adam (2008)
  34. Shashkin, A. et al. Percolation metal-insulator transitions in the two-dimensional electron system of AlGaAs/GaAs heterostructures. Phys. Rev. Lett. 73, 3141–3144 (1994). (10.1103/PhysRevLett.73.3141) / Phys. Rev. Lett. by A Shashkin (1994)
  35. Das Sarma, S. & Hwang, E. H. Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers. Phys. Rev. Lett. 83, 164–167 (1999). (10.1103/PhysRevLett.83.164) / Phys. Rev. Lett. by S Das Sarma (1999)
  36. Zomer, P. J., Dash, S. P., Tombros, N. & van Wees, B. J. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride. Appl. Phys. Lett. 99, 232104 (2011). (10.1063/1.3665405) / Appl. Phys. Lett. by PJ Zomer (2011)
  37. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010). (10.1038/nnano.2010.172) / Nat. Nanotechnol. by CR Dean (2010)
  38. Sanchez-Yamagishi, J. D. et al. Quantum hall effect, screening, and layer-polarized insulating states in twisted bilayer graphene. Phys. Rev. Lett. 108, 076601 (2012). (10.1103/PhysRevLett.108.076601) / Phys. Rev. Lett. by JD Sanchez-Yamagishi (2012)
  39. Schmidt, H. et al. Tunable graphene system with two decoupled monolayers. Appl. Phys. Lett. 93, 172108 (2008). (10.1063/1.3012369) / Appl. Phys. Lett. by H Schmidt (2008)
  40. Fallahazad, B. et al. Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition. Phys. Rev. B 85, 201408 (2012). (10.1103/PhysRevB.85.201408) / Phys. Rev. B by B Fallahazad (2012)
  41. Cheiwchanchamnangij, T. & Lambrecht, W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 . Phys. Rev. B 85, 205302 (2012). (10.1103/PhysRevB.85.205302) / Phys. Rev. B by T Cheiwchanchamnangij (2012)
  42. Molina-Sanchez, A. & Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2 . Phys. Rev. B 84, 155413 (2011). (10.1103/PhysRevB.84.155413) / Phys. Rev. B by A Molina-Sanchez (2011)
  43. Min, S. W. et al. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance. Nanoscale 5, 548–551 (2013). (10.1039/C2NR33443G) / Nanoscale by SW Min (2013)
  44. Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2 . ACS Nano 4, 2695–2700 (2010). (10.1021/nn1003937) / ACS Nano by C Lee (2010)
  45. Kam, K. K. & Parkinson, B. A. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982). (10.1021/j100393a010) / J. Phys. Chem. by KK Kam (1982)
  46. Larentis, S. et al. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Lett. 14, 2039–2045 (2014). (10.1021/nl500212s) / Nano Lett. by S Larentis (2014)
  47. Punnoose, A. & Finkel’stein, A. M. Metal-insulator transition in disordered two-dimensional electron systems. Science 310, 289–291 (2005). (10.1126/science.1115660) / Science by A Punnoose (2005)
Dates
Type When
Created 10 years, 7 months ago (Jan. 14, 2015, 6:38 a.m.)
Deposited 2 years, 8 months ago (Jan. 5, 2023, 7:16 a.m.)
Indexed 3 days, 12 hours ago (Sept. 2, 2025, 6:47 a.m.)
Issued 10 years, 7 months ago (Jan. 14, 2015)
Published 10 years, 7 months ago (Jan. 14, 2015)
Published Online 10 years, 7 months ago (Jan. 14, 2015)
Funders 0

None

@article{Chen_2015, title={Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures}, volume={6}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms7088}, DOI={10.1038/ncomms7088}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Chen, Xiaolong and Wu, Zefei and Xu, Shuigang and Wang, Lin and Huang, Rui and Han, Yu and Ye, Weiguang and Xiong, Wei and Han, Tianyi and Long, Gen and Wang, Yang and He, Yuheng and Cai, Yuan and Sheng, Ping and Wang, Ning}, year={2015}, month=jan }