Revealing the role of defects in ferroelectric switching with atomic resolution
10.1038/ncomms1600
Crossref journal-article
Springer Science and Business Media LLC
Nature Communications (297)
Bibliography

Gao, P., Nelson, C. T., Jokisaari, J. R., Baek, S.-H., Bark, C. W., Zhang, Y., Wang, E., Schlom, D. G., Eom, C.-B., & Pan, X. (2011). Revealing the role of defects in ferroelectric switching with atomic resolution. Nature Communications, 2(1).

Authors 10
  1. Peng Gao (first)
  2. Christopher T. Nelson (additional)
  3. Jacob R. Jokisaari (additional)
  4. Seung-Hyub Baek (additional)
  5. Chung Wung Bark (additional)
  6. Yi Zhang (additional)
  7. Enge Wang (additional)
  8. Darrell G. Schlom (additional)
  9. Chang-Beom Eom (additional)
  10. Xiaoqing Pan (additional)
References 31 Referenced 249
  1. Scott, J. F. Applications of modern ferroelectrics. Science 315, 954–959 (2007). (10.1126/science.1129564) / Science by JF Scott (2007)
  2. Scott, J. F. & De Araujo, C. A. P. Ferroelectric memories. Science 246, 1400–1405 (1989). (10.1126/science.246.4936.1400) / Science by JF Scott (1989)
  3. Garcia, V. et al. Giant tunnel electroresistance for non-destructive readout of ferroelectric states. Nature 460, 81–84 (2009). (10.1038/nature08128) / Nature by V Garcia (2009)
  4. Garcia, V. et al. Ferroelectric control of spin polarization. Science 327, 1106–1110 (2010). (10.1126/science.1184028) / Science by V Garcia (2010)
  5. Tsymbal, E. Y. & Kohlstedt, H. Applied physics—tunneling across a ferroelectric. Science 313, 181–183 (2006). (10.1126/science.1126230) / Science by EY Tsymbal (2006)
  6. Maksymovych, P. et al. Polarization control of electron tunneling into ferroelectric surfaces. Science 324, 1421–1425 (2009). (10.1126/science.1171200) / Science by P Maksymovych (2009)
  7. Li, D. B. et al. Direct in situ determination of the polarization dependence of physisorption on ferroelectric surfaces. Nat. Mater. 7, 473–477 (2008). (10.1038/nmat2198) / Nat. Mater. by DB Li (2008)
  8. Zheng, H. et al. Multiferroic BaTiO3-CoFe2O4 nanostructures. Science 303, 661–663 (2004). (10.1126/science.1094207) / Science by H Zheng (2004)
  9. Chu, Y. H. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nat. Mater. 7, 478–482 (2008). (10.1038/nmat2184) / Nat. Mater. by YH Chu (2008)
  10. Jesse, S. et al. Direct imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials. Nat. Mater. 7, 209–215 (2008). (10.1038/nmat2114) / Nat. Mater. by S Jesse (2008)
  11. Dawber, M., Rabe, K. M. & Scott, J. F. Physics of thin-film ferroelectric oxides. Rev. Mod. Phys. 77, 1083–1130 (2005). (10.1103/RevModPhys.77.1083) / Rev. Mod. Phys. by M Dawber (2005)
  12. De Araujo, C. A. P., Cuchiaro, J. D., McMillan, L. D., Scott, M. C. & Scott, J. F. Fatigue-free ferroelectric capacitors with platinum-electrodes. Nature 374, 627–629 (1995). (10.1038/374627a0) / Nature by CAP De Araujo (1995)
  13. Maksymovych, P. et al. Defect-induced asymmetry of local hysteresis loops on BiFeO3 surfaces. J. Mater. Sci. 44, 5095–5101 (2009). (10.1007/s10853-009-3697-z) / J. Mater. Sci. by P Maksymovych (2009)
  14. Yamamoto, N., Yagi, K. & Honjo, G. Electron-microscopic studies of ferroelectric and ferroelastic Gd2(MoO4)4. 4. Polarization reversal and field-induced phase-transformation. Phys. Status Solidi A-Appl. Res. 62, 657–664 (1980). (10.1002/pssa.2210620238) / Phys. Status Solidi A-Appl. Res. by N Yamamoto (1980)
  15. Snoeck, E., Normand, L., Thorel, A. & Roucau, C. Electron-microscopy study of ferroelastic and ferroelectric domain-wall motions induced by the in-situ application of an electric-field in BaTiO3 . Phase Transit. 46, 77–88 (1994). (10.1080/01411599408200317) / Phase Transit. by E Snoeck (1994)
  16. Tan, X. L. & Shang, J. K. In-situ transmission electron microscopy study of electric-field-induced grain-boundary cracking in lead zirconate titanate. Philos. Mag. A. 82, 1463–1478 (2002). (10.1080/01418610208240031) / Philos. Mag. A. by XL Tan (2002)
  17. Zhang, J. X. et al. Large field-induced strains in a lead-free piezoelectric material. Nat. Nanotechnol. 6, 97–101 (2011). / Nat. Nanotechnol. by JX Zhang (2011)
  18. Chang, H. J. et al. Watching domains grow: in-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy. J. Appl. Phys. 110, 052014 (2011). (10.1063/1.3623779) / J. Appl. Phys. by HJ Chang (2011)
  19. Eom, C. B. et al. In situ grown YBa2Cu3O7−d thin-films from single-target magnetron sputtering. Appl. Phys. Lett. 55, 595–597 (1989). (10.1063/1.102436) / Appl. Phys. Lett. by CB Eom (1989)
  20. Eom, C. B. et al. Single-crystal epitaxial thin-films of the isotropic metallic oxides Sr1−xCaxRuO3 (0-less-than-or-equal-to-x-less-than-or-equal-to-1). Science 258, 1766–1769 (1992). (10.1126/science.258.5089.1766) / Science by CB Eom (1992)
  21. Eom, C. B. et al. Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes. Appl. Phys. Lett. 63, 2570–2572 (1993). (10.1063/1.110436) / Appl. Phys. Lett. by CB Eom (1993)
  22. Nelson, C. T. et al. Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces. Nano Lett. 11, 828–834 (2011). (10.1021/nl1041808) / Nano Lett. by CT Nelson (2011)
  23. Yoshida, C., Yoshida, A. & Tamura, H. Nanoscale conduction modulation in Au/Pb(Zr, Ti)O3/SrRuO3 heterostructure. Appl. Phys. Lett. 75, 1449–1451 (1999). (10.1063/1.124721) / Appl. Phys. Lett. by C Yoshida (1999)
  24. Folkman, C. M. et al. Study of defect-dipoles in an epitaxial ferroelectric thin film. Appl. Phys. Lett. 96, 052903 (2010). (10.1063/1.3298362) / Appl. Phys. Lett. by CM Folkman (2010)
  25. Balke, N. et al. Direct observation of capacitor switching using planar electrodes. Adv. Funct. Mater. 20, 3466–3475 (2010). (10.1002/adfm.201000475) / Adv. Funct. Mater. by N Balke (2010)
  26. Sze, S. M., Coleman, D. J. & Loya, A. Current transport in metal-semiconductor-metal (MSM) structures. Solid-State Electron. 14, 1209–1218 (1971). (10.1016/0038-1101(71)90109-2) / Solid-State Electron. by SM Sze (1971)
  27. Hartmann, A. J., Neilson, M., Lamb, R. N., Watanabe, K. & Scott, J. F. Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-films capacitors. Appl. Phys. A 70, 239–242 (2000). (10.1007/s003390050041) / Appl. Phys. A by AJ Hartmann (2000)
  28. Muller, E. W. Work function of tungsten single crystal planes measured by the field emission microscope. J. Appl. Phys. 26, 732–737 (1955). (10.1063/1.1722081) / J. Appl. Phys. by EW Muller (1955)
  29. Scott, J. F. Device physics of ferroelectric thin-film memories. Jpn. J. Appl. Phys. 38, 2272–2274 (1999). (10.1143/JJAP.38.2272) / Jpn. J. Appl. Phys. by JF Scott (1999)
  30. Waser, R. Dielectric analysis of integrated ceramic thin film capacitors. Integr. Ferroelectr. 15, 39–51 (1997). (10.1080/10584589708015695) / Integr. Ferroelectr. by R Waser (1997)
  31. Damjanovic, D. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Rep. Prog. Phys. 61, 1267–1324 (1998). (10.1088/0034-4885/61/9/002) / Rep. Prog. Phys. by D Damjanovic (1998)
Dates
Type When
Created 13 years, 8 months ago (Dec. 20, 2011, 7:05 a.m.)
Deposited 2 years, 7 months ago (Jan. 5, 2023, 7:37 p.m.)
Indexed 9 minutes ago (Aug. 20, 2025, 11:12 p.m.)
Issued 13 years, 8 months ago (Dec. 20, 2011)
Published 13 years, 8 months ago (Dec. 20, 2011)
Published Online 13 years, 8 months ago (Dec. 20, 2011)
Funders 0

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@article{Gao_2011, title={Revealing the role of defects in ferroelectric switching with atomic resolution}, volume={2}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms1600}, DOI={10.1038/ncomms1600}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Gao, Peng and Nelson, Christopher T. and Jokisaari, Jacob R. and Baek, Seung-Hyub and Bark, Chung Wung and Zhang, Yi and Wang, Enge and Schlom, Darrell G. and Eom, Chang-Beom and Pan, Xiaoqing}, year={2011}, month=dec }