Abstract
AbstractInterfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate—due to strong spin–orbit interaction—spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.
References
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Dates
Type | When |
---|---|
Created | 8 years, 8 months ago (Dec. 13, 2016, 5:24 a.m.) |
Deposited | 2 years, 7 months ago (Jan. 4, 2023, 4:27 a.m.) |
Indexed | 3 weeks, 4 days ago (Aug. 6, 2025, 9:20 a.m.) |
Issued | 8 years, 8 months ago (Dec. 13, 2016) |
Published | 8 years, 8 months ago (Dec. 13, 2016) |
Published Online | 8 years, 8 months ago (Dec. 13, 2016) |
@article{Chen_2016, title={Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature}, volume={7}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms13802}, DOI={10.1038/ncomms13802}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Chen, L. and Decker, M. and Kronseder, M. and Islinger, R. and Gmitra, M. and Schuh, D. and Bougeard, D. and Fabian, J. and Weiss, D. and Back, C. H.}, year={2016}, month=dec }