DOI: 10.1038/ncomms13713. Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

10.1038/ncomms13713

Crossref journal-article

Springer Science and Business Media LLC

Nature Communications (297)

Abstract

AbstractRecently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 1019 cm−3 at 773 K.

Bibliography

Duong, A. T., Nguyen, V. Q., Duvjir, G., Duong, V. T., Kwon, S., Song, J. Y., Lee, J. K., Lee, J. E., Park, S., Min, T., Lee, J., Kim, J., & Cho, S. (2016). Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals. Nature Communications, 7(1).

Authors 13

Anh Tuan Duong (first)
Van Quang Nguyen (additional)
Ganbat Duvjir (additional)
Van Thiet Duong (additional)
Suyong Kwon (additional)
Jae Yong Song (additional)
Jae Ki Lee (additional)
Ji Eun Lee (additional)
SuDong Park (additional)
Taewon Min (additional)
Jaekwang Lee (additional)
Jungdae Kim (additional)
Sunglae Cho (additional)

References 17 Referenced 405

Paul, B. & Banerji, P. Grain structure induced thermoelectric properties in PbTe nanocomposites. Nanosci. Nanotechnol. Lett. 1, 208–212 (2009). (10.1166/nnl.2009.1041) / Nanosci. Nanotechnol. Lett. by B Paul (2009)
Heremans, J. P. et al. Enhancement of thermoelectric of the electronic density of states. Science 321, 554–557 (2008). (10.1126/science.1159725) / Science by JP Heremans (2008)
Goldsmid, H. J. Impurity band effects in thermoelectric materials. J. Electron. Mater. August 41, 2126–2129 (2012). (10.1007/s11664-012-2108-4) / J. Electron. Mater. August by HJ Goldsmid (2012)
Yu, B. et al. Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites. Nano Lett. 12, 2077–2082 (2012). (10.1021/nl3003045) / Nano Lett. by B Yu (2012)
Heremans, J. P., Wiendlocha, B. & Chamoire, A. M. Resonant levels in bulk thermoelectric semiconductors. Energy Environ. Sci. 5, 5510–5530 (2012). (10.1039/C1EE02612G) / Energy Environ. Sci. by JP Heremans (2012)
Parenteau, M. & Carlone, C. Influence of temperature and pressure on the electronic transitions in SnS and Snse semiconductors. Phys. Rev. B 41, 5227–5234 (1990). (10.1103/PhysRevB.41.5227) / Phys. Rev. B by M Parenteau (1990)
Shi, G. & Kioupakis, E. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe. J. Appl. Phys. 117, 065103 (2015). (10.1063/1.4907805) / J. Appl. Phys. by G Shi (2015)
Carrete, J., Mingo, N. & Curtarolo, S. Low thermal conductivity and triaxial phononic anisotropy of SnSe. Appl. Phys. Lett. 105, 101907 (2014). (10.1063/1.4895770) / Appl. Phys. Lett. by J Carrete (2014)
Zhao, L.-D. et al. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 508, 373–377 (2014). (10.1038/nature13184) / Nature by L-D Zhao (2014)
Kutorasinski, K., Wiendlocha, B., Kaprzyk, S. & Tobola, J. Electronic structure and thermoelectric properties of n-and p-type SnSe from first-principles calculations. Phys. Rev. B 91, 205201 (2015). (10.1103/PhysRevB.91.205201) / Phys. Rev. B by K Kutorasinski (2015)
Yang, J., Zhang, G., Yang, G., Wang, C. & Wang, Y. X. Outstanding thermoelectric performances for both p- and n-type SnSe from first-principles study. J. Alloys Compd. 644, 615–620 (2015). (10.1016/j.jallcom.2015.04.175) / J. Alloys Compd. by J Yang (2015)
Zhao, L. et al. Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. Science 141, 141–144 (2016). (10.1126/science.aad3749) / Science by L Zhao (2016)
Zhang, Q. et al. Studies on thermoelectric properties of n-type polycrystalline SnSe1-xSx by Iodine doping. Adv. Energy Mater. 5, 1500360 (2015). (10.1002/aenm.201500360) / Adv. Energy Mater. by Q Zhang (2015)
Wang, X. et al. Optimization of thermoelectric properties in n-type SnSe doped with BiCl3 . Appl. Phys. Lett. 108, 083902 (2016). (10.1063/1.4942890) / Appl. Phys. Lett. by X Wang (2016)
Kim, S., Duong, A.-T., Cho, S., Rhim, S. H. & Kim, J. A microscopic study investigating the structure of SnSe surfaces. Surf. Sci. 651, 5–9 (2016). (10.1016/j.susc.2016.03.013) / Surf. Sci. by S Kim (2016)
Choi, J. et al. Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3 . J. Magn. Magn. Mater. 304, 164–166 (2006). (10.1016/j.jmmm.2006.02.041) / J. Magn. Magn. Mater. by J Choi (2006)
Kim, J. et al. Compact low temperature scanning tunneling microscope with in-situ sample preparation capability. Rev. Sci. Instrum. 86, 093707 (2015). (10.1063/1.4931761) / Rev. Sci. Instrum. by J Kim (2015)

Dates

Type	When
Created	8 years, 8 months ago (Dec. 12, 2016, 5:23 a.m.)
Deposited	2 years, 7 months ago (Jan. 4, 2023, 4:34 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 6, 2025, 9:25 a.m.)
Issued	8 years, 8 months ago (Dec. 12, 2016)
Published	8 years, 8 months ago (Dec. 12, 2016)
Published Online	8 years, 8 months ago (Dec. 12, 2016)

Funders 0

None

BibTeX

@article{Duong_2016, title={Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals}, volume={7}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms13713}, DOI={10.1038/ncomms13713}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Duong, Anh Tuan and Nguyen, Van Quang and Duvjir, Ganbat and Duong, Van Thiet and Kwon, Suyong and Song, Jae Yong and Lee, Jae Ki and Lee, Ji Eun and Park, SuDong and Min, Taewon and Lee, Jaekwang and Kim, Jungdae and Cho, Sunglae}, year={2016}, month=dec }

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