DOI: 10.1038/ncomms13413. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

10.1038/ncomms13413

Crossref journal-article

Springer Science and Business Media LLC

Nature Communications (297)

Abstract

AbstractRecently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Bibliography

Shim, J., Oh, S., Kang, D.-H., Jo, S.-H., Ali, M. H., Choi, W.-Y., Heo, K., Jeon, J., Lee, S., Kim, M., Song, Y. J., & Park, J.-H. (2016). Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic. Nature Communications, 7(1).

Authors 12

Jaewoo Shim (first)
Seyong Oh (additional)
Dong-Ho Kang (additional)
Seo-Hyeon Jo (additional)
Muhammad Hasnain Ali (additional)
Woo-Young Choi (additional)
Keun Heo (additional)
Jaeho Jeon (additional)
Sungjoo Lee (additional)
Minwoo Kim (additional)
Young Jae Song (additional)
Jin-Hong Park (additional)

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Dates

Type	When
Created	8 years, 9 months ago (Nov. 7, 2016, 6:12 a.m.)
Deposited	2 years, 7 months ago (Jan. 4, 2023, 5:06 a.m.)
Indexed	1 day, 23 hours ago (Aug. 27, 2025, 11:34 a.m.)
Issued	8 years, 9 months ago (Nov. 7, 2016)
Published	8 years, 9 months ago (Nov. 7, 2016)
Published Online	8 years, 9 months ago (Nov. 7, 2016)

Funders 0

None

BibTeX

@article{Shim_2016, title={Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic}, volume={7}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/ncomms13413}, DOI={10.1038/ncomms13413}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Shim, Jaewoo and Oh, Seyong and Kang, Dong-Ho and Jo, Seo-Hyeon and Ali, Muhammad Hasnain and Choi, Woo-Young and Heo, Keun and Jeon, Jaeho and Lee, Sungjoo and Kim, Minwoo and Song, Young Jae and Park, Jin-Hong}, year={2016}, month=nov }

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  "abstract": "<jats:title>Abstract</jats:title><jats:p>Recently, negative differential resistance devices have attracted considerable attention due to their folded current\u2013voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS<jats:sub>2</jats:sub>) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180\u2009K, respectively. Also, the carrier transport mechanism of the BP/ReS<jats:sub>2</jats:sub> negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.</jats:p>",
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