DOI: 10.1038/nature11817. Magnetic-field-controlled reconfigurable semiconductor logic

Magnetic-field-controlled reconfigurable semiconductor logic

10.1038/nature11817

Crossref journal-article

Springer Science and Business Media LLC

Nature (297)

Bibliography

Joo, S., Kim, T., Shin, S. H., Lim, J. Y., Hong, J., Song, J. D., Chang, J., Lee, H.-W., Rhie, K., Han, S. H., Shin, K.-H., & Johnson, M. (2013). Magnetic-field-controlled reconfigurable semiconductor logic. Nature, 494(7435), 72â76.

Authors 12

Sungjung Joo (first)
Taeyueb Kim (additional)
Sang Hoon Shin (additional)
Ju Young Lim (additional)
Jinki Hong (additional)
Jin Dong Song (additional)
Joonyeon Chang (additional)
Hyun-Woo Lee (additional)
Kungwon Rhie (additional)
Suk Hee Han (additional)
Kyung-Ho Shin (additional)
Mark Johnson (additional)

References 21 Referenced 101

Moodera, J. S. & Leclair, P. Spin electronics: a quantum leap. Nature Mater. 2, 707–708 (2003) (10.1038/nmat1006) / Nature Mater. by JS Moodera (2003)
Ney, A., Pampuch, C., Koch, R. & Ploog, K. H. Programmable computing with a single magnetoresistive element. Nature 425, 485–487 (2003) (10.1038/nature02014) / Nature by A Ney (2003)
Dery, H., Dalal, P., Cywinski, L. & Sham, L. J. Spin-based logic in semiconductors for reconfigurable large-scale circuits. Nature 447, 573–576 (2007) (10.1038/nature05833) / Nature by H Dery (2007)
Xu, P. et al. An all-metallic logic gate based on current-driven domain wall motion. Nature Nanotechnol. 3, 97–100 (2008) (10.1038/nnano.2008.1) / Nature Nanotechnol. by P Xu (2008)
Behin-Aein, B., Datta, B. D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nature Nanotechnol. 5, 266–270 (2010) (10.1038/nnano.2010.31) / Nature Nanotechnol. by B Behin-Aein (2010)
Delmo, M. et al. Large positive magnetoresistive effect in silicon induced by the space-charge effect. Nature 457, 1112–1115 (2009) (10.1038/nature07711) / Nature by M Delmo (2009)
Wan, C. et al. Geometrical enhancement of low-field magnetoresistance in silicon. Nature 477, 304–307 (2011) (10.1038/nature10375) / Nature by C Wan (2011)
Lee, J. et al. An electrical switching device controlled by a magnetic field-dependent impact ionization process. Appl. Phys. Lett. 97, 253505 (2010) (10.1063/1.3532105) / Appl. Phys. Lett. by J Lee (2010)
Hong, J. et al. Magnetic field dependent impact ionization in InSb. Preprint at http://arxiv.org/abs/1206.1094v1 (2012)
Schoonus, J. J. H. M., Bloom, F. L., Wagemans, W., Swagten, H. J. M. & Koopmans, B. Extremely large magnetoresistance in boron-doped silicon. Phys. Rev. Lett. 100, 127202 (2008) (10.1103/PhysRevLett.100.127202) / Phys. Rev. Lett. by JJHM Schoonus (2008)
Delmo, M. P., Kasai, S., Kobayashi, K. & Ono, T. Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes. Appl. Phys. Lett. 95, 132106 (2009) (10.1063/1.3238361) / Appl. Phys. Lett. by MP Delmo (2009)
Ciccarelli, C., Park, B. G., Ogawa, S., Ferguson, A. J. & Wunderlich, J. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor. Appl. Phys. Lett. 97, 082106 (2010) (10.1063/1.3475771) / Appl. Phys. Lett. by C Ciccarelli (2010)
Sze, S. M. Semiconductor Devices, Physics and Technology 2nd edn, 78, 118 (Wiley and Sons, 2002) / Semiconductor Devices, Physics and Technology by SM Sze (2002)
Chovet, A. Study of recombination processes from the magnetoconcentration effect. Phys. Status Solidi A 28, 633–645 (1975) (10.1002/pssa.2210280230) / Phys. Status Solidi A by A Chovet (1975)
Cristoloveanu, S. & Lee, J. H. Magnetoconcentration and related galvanomagnetic effects in non-intrinsic semiconductors. J. Phys. C 13, 5983–5997 (1980) (10.1088/0022-3719/13/32/020) / J. Phys. C by S Cristoloveanu (1980)
Fulling, S. A., Sinyakov, M. N. & Tischchenko, S. V. Linearity and the Mathematics of Several Variables 343 (World Scientific, 2000) (10.1142/4324) / Linearity and the Mathematics of Several Variables by SA Fulling (2000)
Massey, D. J. et al. Impact ionization in submicron silicon devices. J. Appl. Phys. 95, 5931–5933 (2004) (10.1063/1.1691177) / J. Appl. Phys. by DJ Massey (2004)
Xie, J. J. et al. Excess noise characteristics of thin AlAsSb APDs. IEEE Trans. Electron. Dev. 59, 1475–1479 (2012) (10.1109/TED.2012.2187211) / IEEE Trans. Electron. Dev. by JJ Xie (2012)
Hong, J. et al. Local Hall effect in hybrid ferromagnetic/semiconductor devices. Appl. Phys. Lett. 90, 023510 (2007) (10.1063/1.2416000) / Appl. Phys. Lett. by J Hong (2007)
Hosomi, M. et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-RAM. In Proc. Electron Devices Meeting, 2005 459–462 (IEDM Technical Digest, IEEE International, 2005) (10.1109/IEDM.2005.1609379)
Lim, J. Y., Song, J. D., Ahn, J.-P., Rho, H. & Yang, H. S. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs. Thin Solid Films 520, 6589–6594 (2012) (10.1016/j.tsf.2012.06.077) / Thin Solid Films by JY Lim (2012)

Dates

Type	When
Created	12 years, 6 months ago (Jan. 29, 2013, 10:35 a.m.)
Deposited	3 months, 3 weeks ago (April 29, 2025, 2:46 p.m.)
Indexed	7 hours, 6 minutes ago (Aug. 24, 2025, 6:54 p.m.)
Issued	12 years, 6 months ago (Jan. 30, 2013)
Published	12 years, 6 months ago (Jan. 30, 2013)
Published Online	12 years, 6 months ago (Jan. 30, 2013)
Published Print	12 years, 6 months ago (Feb. 7, 2013)

Funders 0

None

BibTeX

@article{Joo_2013, title={Magnetic-field-controlled reconfigurable semiconductor logic}, volume={494}, ISSN={1476-4687}, url={http://dx.doi.org/10.1038/nature11817}, DOI={10.1038/nature11817}, number={7435}, journal={Nature}, publisher={Springer Science and Business Media LLC}, author={Joo, Sungjung and Kim, Taeyueb and Shin, Sang Hoon and Lim, Ju Young and Hong, Jinki and Song, Jin Dong and Chang, Joonyeon and Lee, Hyun-Woo and Rhie, Kungwon and Han, Suk Hee and Shin, Kyung-Ho and Johnson, Mark}, year={2013}, month=jan, pages={72–76} }

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