A III–V nanowire channel on silicon for high-performance vertical transistors
10.1038/nature11293
Crossref journal-article
Springer Science and Business Media LLC
Nature (297)
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Tomioka, K., Yoshimura, M., & Fukui, T. (2012). A III–V nanowire channel on silicon for high-performance vertical transistors. Nature, 488(7410), 189–192.

Authors 3
  1. Katsuhiro Tomioka (first)
  2. Masatoshi Yoshimura (additional)
  3. Takashi Fukui (additional)
References 29 Referenced 664
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Dates
Type When
Created 13 years ago (Aug. 1, 2012, 5:08 a.m.)
Deposited 2 years, 3 months ago (May 18, 2023, 2:02 p.m.)
Indexed 4 days, 4 hours ago (Aug. 23, 2025, 1:08 a.m.)
Issued 13 years ago (Aug. 1, 2012)
Published 13 years ago (Aug. 1, 2012)
Published Online 13 years ago (Aug. 1, 2012)
Published Print 13 years ago (Aug. 1, 2012)
Funders 0

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@article{Tomioka_2012, title={A III–V nanowire channel on silicon for high-performance vertical transistors}, volume={488}, ISSN={1476-4687}, url={http://dx.doi.org/10.1038/nature11293}, DOI={10.1038/nature11293}, number={7410}, journal={Nature}, publisher={Springer Science and Business Media LLC}, author={Tomioka, Katsuhiro and Yoshimura, Masatoshi and Fukui, Takashi}, year={2012}, month=aug, pages={189–192} }