DOI: 10.1038/nature10375. Geometrical enhancement of low-field magnetoresistance in silicon

Geometrical enhancement of low-field magnetoresistance in silicon

10.1038/nature10375

Crossref journal-article

Springer Science and Business Media LLC

Nature (297)

Bibliography

Wan, C., Zhang, X., Gao, X., Wang, J., & Tan, X. (2011). Geometrical enhancement of low-field magnetoresistance in silicon. Nature, 477(7364), 304â307.

Authors 5

Caihua Wan (first)
Xiaozhong Zhang (additional)
Xili Gao (additional)
Jimin Wang (additional)
Xinyu Tan (additional)

References 25 Referenced 84

Delmo, M. P., Yamamoto, S., Kaisa, S., Ono, T. & Kobayashi, K. Large positive magnetoresistive effect in silicon induced by the space-charge effect. Nature 457, 1112–1115 (2009) (10.1038/nature07711) / Nature by MP Delmo (2009)
Solin, S. A., Thio, T., Hines, D. R. & Heremans, J. J. Enhanced room-temperature geometric magnetoresistance in inhomogeneous narrow-gap semiconductors. Science 289, 1530–1532 (2000) (10.1126/science.289.5484.1530) / Science by SA Solin (2000)
Xu, R. et al. Large magnetoresistance in non-magnetic silver chalcogenides. Nature 390, 57–60 (1997) (10.1038/36306) / Nature by R Xu (1997)
Husmann, A. et al. Megagauss sensors. Nature 417, 421–424 (2002) (10.1038/417421a) / Nature by A Husmann (2002)
Hu, J. S. & Rosenbaum, T. F. Classical and quantum routes to linear magnetoresistance. Nature Mater. 7, 697–700 (2008) (10.1038/nmat2259) / Nature Mater. by JS Hu (2008)
Wu, L. H. et al. Room-temperature nonsaturating magnetoresistance of intrinsic bulk silicon in high pulsed magnetic fields. Appl. Phys. Lett. 98, 112113 (2011) (10.1063/1.3569139) / Appl. Phys. Lett. by LH Wu (2011)
Delmo, M. P., Kaisa, S., Kobayashi, K. & Ono, T. Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes. Appl. Phys. Lett. 95, 132106 (2009) (10.1063/1.3238361) / Appl. Phys. Lett. by MP Delmo (2009)
Schoonus, J. J. H. M., Haazen, P. P. J., Swagten, H. J. M. & Koopmans, B. Unraveling the mechanism of large room-temperature magnetoresistance in silicon. J. Phys. D 42, 185011 (2009) (10.1088/0022-3727/42/18/185011) / J. Phys. D by JJHM Schoonus (2009)
Parish, M. M. & Littlewood, P. B. Non-saturating magnetoresistance in heavily disorder semiconductors. Nature 426, 162–165 (2003) (10.1038/nature02073) / Nature by MM Parish (2003)
Hu, J. S., Parish, M. M. & Rosenbaum, T. F. Nonsaturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation. Phys. Rev. B 75, 214203 (2007) (10.1103/PhysRevB.75.214203) / Phys. Rev. B by JS Hu (2007)
Parish, M. M & Littlewood, P. B. Classical magnetotransport of inhomogeneous conductors. Phys. Rev. B 72, 094417 (2005) (10.1103/PhysRevB.72.094417) / Phys. Rev. B by M Parish (2005)
Herring, C. Effects of random inhomogeneities on electrical and galvanomagnetic measurements. J. Appl. Phys. 31, 1939–1953 (1960) (10.1063/1.1735477) / J. Appl. Phys. by C Herring (1960)
Stroud, D. Generalized effective-medium approach to the conductivity of an inhomogeneous material. Phys. Rev. B 12, 3368–3373 (1975) (10.1103/PhysRevB.12.3368) / Phys. Rev. B by D Stroud (1975)
Stroud, D. & Pan, F. P. Effect of isolated inhomogeneities on the galvanomagnetic properties of solids. Phys. Rev. B 13, 1434–1438 (1976) (10.1103/PhysRevB.13.1434) / Phys. Rev. B by D Stroud (1976)
Stroud, D. & Pan, F. P. Magnetoresistance and Hall coefficient of inhomogeneous metals. Phys. Rev. B 20, 455–465 (1979) (10.1103/PhysRevB.20.455) / Phys. Rev. B by D Stroud (1979)
Stroud, D. New exact results for the Hall coefficient and magnetoresistance of inhomogeneous two-dimensional metals. Phys. Rev. B 30, 447–449 (1984) (10.1103/PhysRevB.30.447) / Phys. Rev. B by D Stroud (1984)
Guttal, V. & Stroud, D. Model for a macroscopically disordered conductor with an exactly linear high-field magnetoresistance. Phys. Rev. B 71, 201304(R) (2005) (10.1103/PhysRevB.71.201304) / Phys. Rev. B by V Guttal (2005)
Magier, R. & Bergman, D. J. Strong-field magnetotransport of two-phase disordered media in two and three dimensions: Exact and approximate results. Phys. Rev. B 74, 094423 (2006) (10.1103/PhysRevB.74.094423) / Phys. Rev. B by R Magier (2006)
Duvail, J. L. et al. Giant magnetoresistance in hybrid nanostructures. J. Magn. Magn. Mater. 151, 324–332 (1995) (10.1016/0304-8853(95)00583-8) / J. Magn. Magn. Mater. by JL Duvail (1995)
Parkin, S. S. P. Giant magnetoresistance in magnetic nanostructures. Annu. Rev. Mater. Sci. 25, 357–388 (1995) (10.1146/annurev.ms.25.080195.002041) / Annu. Rev. Mater. Sci. by SSP Parkin (1995)
Schoonus, J. J. H. M., Bloom, F. L., Wagemans, W., Swagten, H. J. M. & Koopmans, B. Extremely large magnetoresistance in boron-doped silicon. Phys. Rev. Lett. 100, 127202 (2008) (10.1103/PhysRevLett.100.127202) / Phys. Rev. Lett. by JJHM Schoonus (2008)
Baibich, M. N. et al. Giant magnetoresistance in Fe(001)/Cr(001) superlattices. Phys. Rev. Lett. 61, 2472–2475 (1988) (10.1103/PhysRevLett.61.2472) / Phys. Rev. Lett. by MN Baibich (1988)
Parkin, S. S. P. et al. Giant tunneling magnetoresistance at room temperature with MgO (100) tunnel barrier. Nature Mater. 3, 862–867 (2004) (10.1038/nmat1256) / Nature Mater. by SSP Parkin (2004)
Hu, B. & Wu, Y. Tuning magnetoresistance between positive and negative in organic semiconductors. Nature Mater. 6, 985–991 (2007) (10.1038/nmat2034) / Nature Mater. by B Hu (2007)
Bloom, F. L., Wagemans, W., Kemerink, M. & Koopmans, B. Separating positive and negative magnetoresistance in organic semiconductor devices. Phys. Rev. Lett. 99, 257201 (2007) (10.1103/PhysRevLett.99.257201) / Phys. Rev. Lett. by FL Bloom (2007)

Dates

Type	When
Created	13 years, 11 months ago (Sept. 13, 2011, 11:13 a.m.)
Deposited	2 years, 3 months ago (May 18, 2023, 1:54 p.m.)
Indexed	1 year ago (Aug. 24, 2024, 1:45 a.m.)
Issued	13 years, 11 months ago (Sept. 1, 2011)
Published	13 years, 11 months ago (Sept. 1, 2011)
Published Online	13 years, 11 months ago (Sept. 14, 2011)
Published Print	13 years, 11 months ago (Sept. 1, 2011)

Funders 0

None

BibTeX

@article{Wan_2011, title={Geometrical enhancement of low-field magnetoresistance in silicon}, volume={477}, ISSN={1476-4687}, url={http://dx.doi.org/10.1038/nature10375}, DOI={10.1038/nature10375}, number={7364}, journal={Nature}, publisher={Springer Science and Business Media LLC}, author={Wan, Caihua and Zhang, Xiaozhong and Gao, Xili and Wang, Jimin and Tan, Xinyu}, year={2011}, month=sep, pages={304–307} }

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