Bibliography
Green, J. E., Wook Choi, J., Boukai, A., Bunimovich, Y., Johnston-Halperin, E., DeIonno, E., Luo, Y., Sheriff, B. A., Xu, K., Shik Shin, Y., Tseng, H.-R., Stoddart, J. F., & Heath, J. R. (2007). A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre. Nature, 445(7126), 414â417.
Authors
13
- Jonathan E. Green (first)
- Jang Wook Choi (additional)
- Akram Boukai (additional)
- Yuri Bunimovich (additional)
- Ezekiel Johnston-Halperin (additional)
- Erica DeIonno (additional)
- Yi Luo (additional)
- Bonnie A. Sheriff (additional)
- Ke Xu (additional)
- Young Shik Shin (additional)
- Hsian-Rong Tseng (additional)
- J. Fraser Stoddart (additional)
- James R. Heath (additional)
References
29
Referenced
1,152
- The International Technology Roadmap for Semiconductors (ITRS): process integration, devices, and structures. (Semiconductor Industry Association, San Jose, California, 2005). 〈 http://www.itrs.net/reports.html 〉.
-
Yang, P. & Kim, F. Langmuir-Blodgett assembly of one-dimensional nanostructures. ChemPhysChem 3, 503–506 (2002)
(
10.1002/1439-7641(20020617)3:6<503::AID-CPHC503>3.0.CO;2-U
) / ChemPhysChem by P Yang (2002) -
Heath, J. R. & Ratner, M. A. Molecular electronics. Phys. Today 56, 43–49 (2003)
(
10.1063/1.1583533
) / Phys. Today by JR Heath (2003) -
Heath, J. R., Kuekes, P. J., Snider, G. S. & Williams, R. S. A defect-tolerant computer architecture: Opportunities for nanotechnology. Science 280, 1716–1721 (1998)
(
10.1126/science.280.5370.1716
) / Science by JR Heath (1998) -
Xiang, J. et al. Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441, 489–493 (2006)
(
10.1038/nature04796
) / Nature by J Xiang (2006) -
Zhou, X., Park, J. Y., Huang, S., Liu, J. & McEuen, P. L. Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors. Phys. Rev. Lett. 95, 146805 (2005)
(
10.1103/PhysRevLett.95.146805
) / Phys. Rev. Lett. by X Zhou (2005) -
Pop, E. et al. Negative differential conductance and hot phonons in suspended nanotube molecular wires. Phys. Rev. Lett. 95, 155505 (2005)
(
10.1103/PhysRevLett.95.155505
) / Phys. Rev. Lett. by E Pop (2005) -
Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006)
(
10.1126/science.1122797
) / Science by Z Chen (2006) -
Zhong, Z. H., Wang, D. L., Cui, Y., Bockrath, M. W. & Lieber, C. M. Nanowire crossbar arrays as address decoders for integrated nanosystems. Science 302, 1377–1379 (2003)
(
10.1126/science.1090899
) / Science by ZH Zhong (2003) -
Choi, J. W. et al. Ground-state equilibrium thermodynamics and switching kinetics of bistable [2]rotaxanes switched in solution, polymer gels, and molecular electronic devices. Chem. Eur. J. 12, 261–279 (2006)
(
10.1002/chem.200500934
) / Chem. Eur. J. by JW Choi (2006) -
DeHon, A. & Naeimi, H. Seven strategies for tolerating highly defective fabrication. IEEE Design Test Comput. 22, 306–315 (2005)
(
10.1109/MDT.2005.94
) / IEEE Design Test Comput. by A DeHon (2005) -
Lee, M. H., Kim, Y. K. & Choi, Y. H. A defect-tolerant memory architecture for molecular electronics. IEEE Trans. Nanotechnol. 3, 152–157 (2004)
(
10.1109/TNANO.2004.824011
) / IEEE Trans. Nanotechnol. by MH Lee (2004) -
DeHon, A., Goldstein, S. C., Kuekes, P. J. & Lincoln, P. Nonphotolithographic nanoscale memory density prospects. IEEE Trans. Nanotechnol. 4, 215–228 (2005)
(
10.1109/TNANO.2004.837849
) / IEEE Trans. Nanotechnol. by A DeHon (2005) -
Snider, G., Kuekes, P., Hogg, T. & Williams, R. S. Nanoelectronic architectures. Appl. Phys. A 80, 1183–1195 (2005)
(
10.1007/s00339-004-3154-4
) / Appl. Phys. A by G Snider (2005) -
Stan, M. R., Franzon, P. D., Goldstein, S. C., Lach, J. C. & Ziegler, M. M. Molecular electronics: From devices and interconnect to circuits and architecture. Proc. IEEE 91, 1940–1957 (2003)
(
10.1109/JPROC.2003.818327
) / Proc. IEEE by MR Stan (2003) -
Diehl, M., Beckman, R., Yaliraki, S. & Heath, J. R. Self-assembly of deterministic carbon nanotube wiring networks. Angew. Chem. Int. Edn Engl. 41, 353–356 (2002)
(
10.1002/1521-3773(20020118)41:2<353::AID-ANIE353>3.0.CO;2-Y
) / Angew. Chem. Int. Edn Engl. by M Diehl (2002) -
Wu, W. et al. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl. Phys. A 80, 1173–1178 (2005)
(
10.1007/s00339-004-3176-y
) / Appl. Phys. A by W Wu (2005) -
Huang, Y., Duan, X. F., Wei, Q. Q. & Lieber, C. M. Directed assembly of one-dimensional nanostructures into functional networks. Science 291, 630–633 (2001)
(
10.1126/science.291.5504.630
) / Science by Y Huang (2001) -
Melosh, N. A. et al. Ultrahigh-density nanowire lattices and circuits. Science 300, 112–115 (2003)
(
10.1126/science.1081940
) / Science by NA Melosh (2003) -
Luo, Y. et al. Two-dimensional molecular electronics circuits. ChemPhysChem 3, 519–525 (2002)
(
10.1002/1439-7641(20020617)3:6<519::AID-CPHC519>3.0.CO;2-2
) / ChemPhysChem by Y Luo (2002) -
Vieu, C. et al. Electron beam lithography: resolution limits and applications. Appl. Surf. Sci. 164, 111–117 (2000)
(
10.1016/S0169-4332(00)00352-4
) / Appl. Surf. Sci. by C Vieu (2000) -
Beckman, R., Johnston-Halperin, E., Luo, Y., Green, J. E. & Heath, J. R. Bridging dimensions: demultiplexing ultrahigh-density nanowire circuits. Science 310, 465–468 (2005)
(
10.1126/science.1114757
) / Science by R Beckman (2005) -
Parkin, S. S. P. et al. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory. J. Appl. Phys. 85, 5828–5833 (1999)
(
10.1063/1.369932
) / J. Appl. Phys. by SSP Parkin (1999) -
McCreery, R. L. Molecular electronic junctions. Chem. Mater. 16, 4477–4496 (2004)
(
10.1021/cm049517q
) / Chem. Mater. by RL McCreery (2004) -
Chen, Y. et al. Nanoscale molecular-switch crossbar circuits Nanotechnology. 14, 462–468 (2003)
(
10.1088/0957-4484/14/4/311
) / Nanotechnology by Yong Chen (2003) -
Allwood, D. A. et al. Magnetic domain-wall logic. Science 309, 1688–1692 (2005)
(
10.1126/science.1108813
) / Science by DA Allwood (2005) -
Waser, R. & Rudiger, A. Ferroelectrics—pushing towards the digital storage limit. Nature Mater. 3, 81–82 (2004)
(
10.1038/nmat1067
) / Nature Mater. by R Waser (2004) -
Katz, E., Baron, R., Willner, I., Richke, N. & Levine, R. D. Temperature-dependent and friction-controlled electrochemically induced shuttling along molecular strings associated with electrodes. ChemPhysChem 6, 2179–2189 (2005)
(
10.1002/cphc.200500162
) / ChemPhysChem by E Katz (2005) -
Jung, G. Y. et al. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Lett. 6, 351–354 (2006)
(
10.1021/nl052110f
) / Nano Lett. by GY Jung (2006)
Dates
Type | When |
---|---|
Created | 18 years, 7 months ago (Jan. 24, 2007, 11:24 p.m.) |
Deposited | 2 years, 3 months ago (May 18, 2023, 2:01 p.m.) |
Indexed | 2 hours, 14 minutes ago (Aug. 28, 2025, 8:05 a.m.) |
Issued | 18 years, 7 months ago (Jan. 1, 2007) |
Published | 18 years, 7 months ago (Jan. 1, 2007) |
Published Print | 18 years, 7 months ago (Jan. 1, 2007) |
@article{Green_2007, title={A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre}, volume={445}, ISSN={1476-4687}, url={http://dx.doi.org/10.1038/nature05462}, DOI={10.1038/nature05462}, number={7126}, journal={Nature}, publisher={Springer Science and Business Media LLC}, author={Green, Jonathan E. and Wook Choi, Jang and Boukai, Akram and Bunimovich, Yuri and Johnston-Halperin, Ezekiel and DeIonno, Erica and Luo, Yi and Sheriff, Bonnie A. and Xu, Ke and Shik Shin, Young and Tseng, Hsian-Rong and Stoddart, J. Fraser and Heath, James R.}, year={2007}, month=jan, pages={414–417} }