DOI: 10.1038/am.2016.203. Resonant level-induced high thermoelectric response in indium-doped GeTe

Resonant level-induced high thermoelectric response in indium-doped GeTe

10.1038/am.2016.203

Crossref journal-article

Springer Science and Business Media LLC

NPG Asia Materials (297)

Bibliography

Wu, L., Li, X., Wang, S., Zhang, T., Yang, J., Zhang, W., Chen, L., & Yang, J. (2017). Resonant level-induced high thermoelectric response in indium-doped GeTe. NPG Asia Materials, 9(1), e343âe343.

Authors 8

Lihua Wu (first)
Xin Li (additional)
Shanyu Wang (additional)
Tiansong Zhang (additional)
Jiong Yang (additional)
Wenqing Zhang (additional)
Lidong Chen (additional)
Jihui Yang (additional)

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Dates

Type	When
Created	8 years, 7 months ago (Jan. 20, 2017, 2:02 a.m.)
Deposited	2 years, 3 months ago (May 18, 2023, 8:18 a.m.)
Indexed	3 hours, 32 minutes ago (Aug. 27, 2025, 12:21 p.m.)
Issued	8 years, 7 months ago (Jan. 1, 2017)
Published	8 years, 7 months ago (Jan. 1, 2017)
Published Online	8 years, 7 months ago (Jan. 20, 2017)
Published Print	8 years, 7 months ago (Jan. 1, 2017)

Funders 0

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BibTeX

@article{Wu_2017, title={Resonant level-induced high thermoelectric response in indium-doped GeTe}, volume={9}, ISSN={1884-4057}, url={http://dx.doi.org/10.1038/am.2016.203}, DOI={10.1038/am.2016.203}, number={1}, journal={NPG Asia Materials}, publisher={Springer Science and Business Media LLC}, author={Wu, Lihua and Li, Xin and Wang, Shanyu and Zhang, Tiansong and Yang, Jiong and Zhang, Wenqing and Chen, Lidong and Yang, Jihui}, year={2017}, month=jan, pages={e343–e343} }

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