Crossref
journal-article
Springer Science and Business Media LLC
Nature (297)
References
10
Referenced
570
- European Commission Technology Roadmap—Optoelectronic Interconnects for Integrated Circuits (eds Forchel, A. & Malinverni, P.) (Office for Official Publications of the European Communities, Luxembourg, 1998). / Technology Roadmap—Optoelectronic Interconnects for Integrated Circuits by European Commission (1998)
-
Hirschman, K. D., Tysbekov, L., Duttagupta, S. P. & Fauchet, P. M. Silicon-based visible light-emitting devices integrated into microelectronic circuits. Nature 384, 338–341 (1996).
(
10.1038/384338a0
) / Nature by KD Hirschman (1996) -
Lu, Z. H., Lockwood, D. J. & Baribeau, J.-M. Quantum confinement and light emission in SiO2/Si superlattices. Nature 378, 258–260 (1995).
(
10.1038/378258a0
) / Nature by ZH Lu (1995) -
Komoda, T. et al. Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation. Nucl. Instrum. Methods B 96, 387–391 (1995).
(
10.1016/0168-583X(94)00525-7
) / Nucl. Instrum. Methods B by T Komoda (1995) -
Zheng, B. et al. Room-temperature sharp line electroluminescence at λ = 1.54 µm from an erbium-doped, silicon light-emitting diode. Appl. Phys. Lett. 64, 2842–2844 (1994).
(
10.1063/1.111977
) / Appl. Phys. Lett. by B Zheng (1994) -
Vescan, L. & Stoica, T. Room-temperature SiGe light-emitting diodes. J. Luminescence 80, 485–489 (1999).
(
10.1016/S0022-2313(98)00160-4
) / J. Luminescence by L Vescan (1999) -
Leong, D., Harry, M., Reeson, K. J. & Homewood, K. P. A silicon/iron disilicide light-emitting diode operating at a wavelength of 1.5 µm. Nature 387, 686–688 (1997).
(
10.1038/42667
) / Nature by D Leong (1997) -
Tybeskov, L., Moore, K. L., Hall, D. G. & Fauchet, P. M. Intrinsic band-edge photoluminescence from silicon clusters at room temperature. Phys. Rev. B 54, R8361–R8364 (1996).
(
10.1103/PhysRevB.54.R8361
) / Phys. Rev. B by L Tybeskov (1996) -
Sveinbjörnsson, E. O. & Weber, J. Room temperature electroluminescence from dislocation rich silicon. Appl. Phys. Lett. 69, 2686–2688 (1996).
(
10.1063/1.117678
) / Appl. Phys. Lett. by EO Sveinbjörnsson (1996) - Hirth, J. P. & Lothe, J. Theory of Dislocations 2nd edn, 63 (John Wiley & Sons, New York, 1982). / Theory of Dislocations by JP Hirth (1982)
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 4:48 a.m.) |
Deposited | 2 years, 3 months ago (May 16, 2023, 9:52 p.m.) |
Indexed | 3 months, 2 weeks ago (May 5, 2025, 12:23 a.m.) |
Issued | 24 years, 5 months ago (March 8, 2001) |
Published | 24 years, 5 months ago (March 8, 2001) |
Published Print | 24 years, 5 months ago (March 8, 2001) |
@article{Ng_2001, title={An efficient room-temperature silicon-based light-emitting diode}, volume={410}, ISSN={1476-4687}, url={http://dx.doi.org/10.1038/35065571}, DOI={10.1038/35065571}, number={6825}, journal={Nature}, publisher={Springer Science and Business Media LLC}, author={Ng, Wai Lek and Lourenço, M. A. and Gwilliam, R. M. and Ledain, S. and Shao, G. and Homewood, K. P.}, year={2001}, month=mar, pages={192–194} }