DOI: 10.1021/nn505354a. Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS<sub>2</sub>

Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

10.1021/nn505354a

Crossref journal-article

American Chemical Society (ACS)

ACS Nano (316)

Bibliography

Corbet, C. M., McClellan, C., Rai, A., Sonde, S. S., Tutuc, E., & Banerjee, S. K. (2014). Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2. ACS Nano, 9(1), 363â370.

Authors 6

Chris M. Corbet (first)
Connor McClellan (additional)
Amritesh Rai (additional)
Sushant Sudam Sonde (additional)
Emanuel Tutuc (additional)
Sanjay K. Banerjee (additional)

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Dates

Type	When
Created	10 years, 8 months ago (Dec. 16, 2014, 11:56 a.m.)
Deposited	2 years, 4 months ago (April 13, 2023, 12:33 p.m.)
Indexed	3 weeks, 4 days ago (Aug. 12, 2025, 6:19 p.m.)
Issued	10 years, 8 months ago (Dec. 24, 2014)
Published	10 years, 8 months ago (Dec. 24, 2014)
Published Online	10 years, 8 months ago (Dec. 24, 2014)
Published Print	10 years, 7 months ago (Jan. 27, 2015)

Funders 2

Semiconductor Research Corporation 10.13039/100000028
Region: Americas
pri (For-profit companies (industry))
Labels2
1. Semiconductor Research Corp.
2. SRC
U.S. Army Research Laboratory 10.13039/100006754 Army Research Laboratory
Region: Americas
gov (National government)
Labels4
1. U.S. Army Research Laboratory
2. US Army Research Laboratory
3. United States Army Research Laboratory
4. ARL

BibTeX

@article{Corbet_2014, title={Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2}, volume={9}, ISSN={1936-086X}, url={http://dx.doi.org/10.1021/nn505354a}, DOI={10.1021/nn505354a}, number={1}, journal={ACS Nano}, publisher={American Chemical Society (ACS)}, author={Corbet, Chris M. and McClellan, Connor and Rai, Amritesh and Sonde, Sushant Sudam and Tutuc, Emanuel and Banerjee, Sanjay K.}, year={2014}, month=dec, pages={363–370} }

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