DOI: 10.1021/nn202852j. Nature of Electronic States in Atomically Thin MoS<sub>2</sub> Field-Effect Transistors

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

10.1021/nn202852j

Crossref journal-article

American Chemical Society (ACS)

ACS Nano (316)

Bibliography

Ghatak, S., Pal, A. N., & Ghosh, A. (2011). Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors. ACS Nano, 5(10), 7707â7712.

Authors 3

Subhamoy Ghatak (first)
Atindra Nath Pal (additional)
Arindam Ghosh (additional)

References 22 Referenced 798

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10.1103/PhysRevB.77.115436 / Phys. Rev. B by Adam S. (2008)

Dates

Type	When
Created	13 years, 11 months ago (Sept. 8, 2011, 1:34 p.m.)
Deposited	2 years, 4 months ago (April 16, 2023, 7:58 p.m.)
Indexed	20 hours, 46 minutes ago (Aug. 27, 2025, 12:10 p.m.)
Issued	13 years, 11 months ago (Sept. 19, 2011)
Published	13 years, 11 months ago (Sept. 19, 2011)
Published Online	13 years, 11 months ago (Sept. 19, 2011)
Published Print	13 years, 10 months ago (Oct. 25, 2011)

Funders 0

None

BibTeX

@article{Ghatak_2011, title={Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors}, volume={5}, ISSN={1936-086X}, url={http://dx.doi.org/10.1021/nn202852j}, DOI={10.1021/nn202852j}, number={10}, journal={ACS Nano}, publisher={American Chemical Society (ACS)}, author={Ghatak, Subhamoy and Pal, Atindra Nath and Ghosh, Arindam}, year={2011}, month=sep, pages={7707–7712} }

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