Crossref journal-article
American Chemical Society (ACS)
ACS Nano (316)
Bibliography

Pantel, D., Goetze, S., Hesse, D., & Alexe, M. (2011). Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films. ACS Nano, 5(7), 6032–6038.

Authors 4
  1. Daniel Pantel (first)
  2. Silvana Goetze (additional)
  3. Dietrich Hesse (additional)
  4. Marin Alexe (additional)
References 49 Referenced 160
  1. 10.1063/1.882324 / Phys. Today by Auciello O. (1998)
  2. 10.1007/978-3-662-04307-3 / Ferroelectric Memories by Scott J. (2000)
  3. Looney, D. H.; Summit, N. J.Semiconductive Translating Device. US Patent 2,791,758, 1957.
  4. Wu, S.Y.; Francombe, M. H.Ferroelectric Memory Device. US Patent 3,832,700, 1974.
  5. {'key': 'ref5/cit5', 'first-page': '2161', 'volume': '13', 'author': 'Esaki L.', 'year': '1971', 'journal-title': 'IBM Tech. Disclosure Bull.'} / IBM Tech. Disclosure Bull. by Esaki L. (1971)
  6. {'key': 'ref6/cit6', 'first-page': '1250', 'volume': '14', 'author': 'Chang L.', 'year': '1971', 'journal-title': 'IBM Tech. Disclosure Bull.'} / IBM Tech. Disclosure Bull. by Chang L. (1971)
  7. 10.1103/PhysRevB.75.104103 / Phys. Rev. B by Pintilie L. (2007)
  8. 10.1038/nmat2023 / Nat. Mater. by Waser R. (2007)
  9. 10.1002/adma.200900375 / Adv. Mater. by Waser R. (2009)
  10. 10.1002/adma.201004317 / Adv. Mater. by Jiang A. Q. (2011)
  11. 10.1063/1.1644917 / Appl. Phys. Lett. by Li J. (2004)
  12. 10.1103/PhysRevLett.98.257601 / Phys. Rev. Lett. by Korff Schmising C. v. (2007)
  13. 10.1063/1.2733640 / J. Appl. Phys. by Jiang A. Q. (2007)
  14. 10.1126/science.1168636 / Science by Choi T. (2009)
  15. 10.1063/1.1582366 / Appl. Phys. Lett. by Qu H. (2003)
  16. 10.1038/nmat2207 / Nat. Mater. by Asadi K. (2008)
  17. 10.1021/nl103650b / Nano Lett. by López-Encarnación J. M. (2011)
  18. 10.1063/1.3039809 / Appl. Phys. Lett. by Shen W. (2008)
  19. 10.1063/1.2841917 / Appl. Phys. Lett. by Kohlstedt H. (2008)
  20. 10.1038/nature08128 / Nature by Garcia V. (2009)
  21. 10.1126/science.1171200 / Science by Maksymovych P. (2009)
  22. 10.1063/1.3295700 / Appl. Phys. Lett. by Crassous A. (2010)
  23. 10.1021/nl901754t / Nano Lett. by Gruverman A. (2009)
  24. 10.1103/PhysRevLett.73.2107 / Phys. Rev. Lett. by Blom P. W. M. (1994)
  25. 10.1038/nmat2432 / Nat. Mater. by Yang C.-H. (2009)
  26. 10.1126/science.1184028 / Science by Garcia V. (2010)
  27. 10.1002/adfm.201000265 / Adv. Funct. Mater. by Hambe M. (2010)
  28. 10.1063/1.102999 / Appl. Phys. Lett. by Dagata J. A. (1990)
  29. 10.1088/0034-4885/73/5/056502 / Rep. Prog. Phys. by Kalinin S. V. (2010)
  30. 10.1002/adma.201001190 / Adv. Mater. by Kalinin S. V. (2010)
  31. 10.1103/PhysRevB.82.134105 / Phys. Rev. B by Pantel D. (2010)
  32. 10.1002/adma.200502711 / Adv. Mater. by Vrejoiu I. (2006)
  33. 10.1063/1.3532110 / Appl. Phys. Lett. by Sambri A. (2011)
  34. 10.1063/1.93501 / Appl. Phys. Lett. by Deckman H. (1982)
  35. 10.1116/1.579726 / J. Vac. Sci. Technol. A by Hulteen J. C. (1995)
  36. 10.1021/jp9904771 / J. Phys. Chem. B by Hulteen J. C. (1999)
  37. 10.1039/C0JM02230F / J. Mater. Chem. by Li L. (2011)
  38. 10.1063/1.1625106 / Appl. Phys. Lett. by Ma W. (2003)
  39. {'key': 'ref39/cit39', 'first-page': '617', 'volume': '63', 'author': 'Winzer M.', 'year': '1996', 'journal-title': 'Appl. Phys. A: Mater. Sci. Process'} / Appl. Phys. A: Mater. Sci. Process by Winzer M. (1996)
  40. 10.1063/1.3021293 / J. Appl. Phys. by Pintilie L. (2008)
  41. 10.1103/PhysRevLett.94.246802 / Phys. Rev. Lett. by Zhuravlev M. Y. (2005)
  42. 10.1038/nature01501 / Nature by Junquera J. (2003)
  43. 10.1063/1.1880443 / Appl. Phys. Lett. by Kim Y. S. (2005)
  44. 10.1063/1.2337363 / J. Appl. Phys. by Nagarajan V. (2006)
  45. 10.1063/1.2972135 / Appl. Phys. Lett. by Petraru A. (2008)
  46. 10.1021/nl9038339 / Nano Lett. by Kim Y. (2010)
  47. {'key': 'ref47/cit47', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze S.', 'year': '2007'} / Physics of Semiconductor Devices by Sze S. (2007)
  48. 10.1103/PhysRevB.72.125341 / Phys. Rev. B by Kohlstedt H. (2005)
  49. 10.1063/1.122630 / Appl. Phys. Lett. by Koster G. (1998)
Dates
Type When
Created 14 years, 2 months ago (June 20, 2011, 1:41 a.m.)
Deposited 2 years, 3 months ago (April 27, 2023, 1:08 p.m.)
Indexed 3 weeks, 2 days ago (Aug. 3, 2025, 12:21 a.m.)
Issued 14 years, 2 months ago (June 23, 2011)
Published 14 years, 2 months ago (June 23, 2011)
Published Online 14 years, 2 months ago (June 23, 2011)
Published Print 14 years, 1 month ago (July 26, 2011)
Funders 0

None

@article{Pantel_2011, title={Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films}, volume={5}, ISSN={1936-086X}, url={http://dx.doi.org/10.1021/nn2018528}, DOI={10.1021/nn2018528}, number={7}, journal={ACS Nano}, publisher={American Chemical Society (ACS)}, author={Pantel, Daniel and Goetze, Silvana and Hesse, Dietrich and Alexe, Marin}, year={2011}, month=jun, pages={6032–6038} }