DOI: 10.1021/nl8023438. Single and Tandem Axial <i>p-i-n</i> Nanowire Photovoltaic Devices

Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices

10.1021/nl8023438

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Kempa, T. J., Tian, B., Kim, D. R., Hu, J., Zheng, X., & Lieber, C. M. (2008). Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices. Nano Letters, 8(10), 3456â3460.

Authors 6

Thomas J. Kempa (first)
Bozhi Tian (additional)
Dong Rip Kim (additional)
Jinsong Hu (additional)
Xiaolin Zheng (additional)
Charles M. Lieber (additional)

References 23 Referenced 383

10.1126/science.1117908 / Science by Gur I. (2005)
{'key': 'ref2/cit2', 'first-page': '114302', 'volume': '97', 'author': 'Kayes B. M.', 'year': '2005', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Kayes B. M. (2005)
10.1557/mrs2007.28 / MRS Bulletin by Luque A. (2007)
10.1038/nature06181 / Nature by Tian B. (2007)
10.1063/1.2821113 / Appl. Phys. Lett. by Tsakalakos L. (2007)
10.1021/nl072622p / Nano Lett. by Kelzenberg M. D. (2008)
10.1002/0470014008 / Handbook of Photovoltaic Science and Engineering by Luque A. (2003)
10.1063/1.1753975 / Appl. Phys. Lett. by Wagner R. S. (1964)
10.1002/adma.200400472 / Adv. Mater. by Zheng G. F. (2004)
The growth substrate consisted of 250 nm Au nanoparticles immobilized on poly-l-lysine treated 600 nm SiO2/Si slivers. The chamber temperature and pressure were held constant at 450 °C and 40 torr, respectively, and the precursor gases silane (2 sccm), dioborane (5 sccm, 100 ppm), and phosphine (1 sccm, 1000 ppm) were introduced as appropriate to form intrinsic, p-type, and n-type regions on the axial NW. The carrier gas was H2(60 sccm). Under these conditions and NW diameter in the range of 200−250 nm, the growth rate is ∼1 μm/min. The dopant feed-in ratios (Si−B/P) were 2000,1 for both p-and n-type segments. For the tandem structures, the two i-segments were 2μm long, the n+and p+regions were 0.5 μm in length, and the Si−B/P ratios were both 500:1 in the heavily doped n+and p+regions.
SiNW devices were fabricated on silicon substrates (Nova Electronic Materials, n-type 0.005 Ω cm) with 100 nm thermal oxide and 200 nm silicon nitride at the surface. After dispersing SiNWs on the substrate, they were oxidized in a UV/O3dry-stripper (Samco International Inc.; Model UV-1) at 300 °C with an O2flow of 1 L/min. The oxide was removed by submerging the substrates in commercial buffered hydrogen fluoride (BHF) solution (Transene Company Inc.) for 5 s.
SiNWs were etched with BHF for 7 s and then immersed in a 60 °C KOH/isopropanol solution (20 wt % KOH in water; 3:1 vol/vol) for 7 s. SEM studies reveal that the etching rate for i-type Si is similar to that for p-type, leading to a 52% and 46%, respectively, reduction in the original diameter for above conditions, while there is negligible etching for n-type Si.
Devices were defined by electron-beam lithography followed by Ti/Pd (5 nm/250 nm) contact deposition in a thermal evaporator.I−Vdata were recorded using an Agilent semiconductor parameter analyzer (Model 4156C) and standard solar illumination was provided by a Newport Solar Simulator (Model 96000) with air mass global, AM 1.5G filter. Illumination intensities were calibrated (100 mW/cm2= 1 sun) with a power meter (Coherent, Field Master). For temperature dependent experiments (Figure3C), the probe station (Desert Cryogenics, Model TTP4) tip and substrate temperatures (LakeShore, Model 331 temperature controller) were within 5% of each other.
{'key': 'ref14/cit14', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze S. M.', 'year': '2004', 'edition': '2'} / Physics of Semiconductor Devices by Sze S. M. (2004)
10.1021/nl062314b / Nano Lett. by Yang C. (2006)
10.1126/science.1124005 / Science by Wang Z. L. (2006)
The projected area used to calculate efficiency was approximated as the length of the intrinsic region and the depletion widths in the p-and n- regions multiplied by the NW diameter. If the entire length between the contacts of the p-i (4 μm)-n axial device was used to estimate area, the efficiency would be 0.15% andJsc= 1.4 mA/cm2. We believe that the smaller projected area corresponding primarily to the i-segment is the best measure of the device performance, because of the short depletion widths and minority carrier diffusion lengths in the heavily doped p-and n-regions.
The ideal diode equation under illumination can be written in logarithmic form as(7)ln(Isc) = (q/nkT)Voc+ ln(I0) wherenis the diode ideality factor,qis fundamental charge,kis Boltzmannʼs constant, andI0is the saturation current. The slope and intercept of the line are used to determinenandI0, respectively.Iscis linearly dependent upon the number of photo-generated carriers and therefore the illumination intensity. It follows from the equation thatVocwill depend logarithmically on intensity (Figure3A).
10.1126/science.1069156 / Science by Huynh W. U. (2002)
10.1038/nmat1387 / Nat. Mater. by Law M. (2005)
10.1002/pip.496 / Prog. Photovolt. Res. Appl. by Green M. A. (2003)
10.1002/9783527618545 / Physics of Solar Cells, From Principles to New Concepts by Wurfel P. (2005)
10.1016/j.solmat.2004.07.026 / Solar Energy Materials and Solar Cells by Ambrosone G. (2005)

Dates

Type	When
Created	16 years, 11 months ago (Sept. 3, 2008, 4:03 a.m.)
Deposited	2 years, 5 months ago (March 7, 2023, 11:22 p.m.)
Indexed	3 weeks, 4 days ago (Aug. 5, 2025, 9 a.m.)
Issued	16 years, 11 months ago (Sept. 3, 2008)
Published	16 years, 11 months ago (Sept. 3, 2008)
Published Online	16 years, 11 months ago (Sept. 3, 2008)
Published Print	16 years, 10 months ago (Oct. 8, 2008)

Funders 0

None

BibTeX

@article{Kempa_2008, title={Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices}, volume={8}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl8023438}, DOI={10.1021/nl8023438}, number={10}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Kempa, Thomas J. and Tian, Bozhi and Kim, Dong Rip and Hu, Jinsong and Zheng, Xiaolin and Lieber, Charles M.}, year={2008}, month=sep, pages={3456–3460} }

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