DOI: 10.1021/nl801225h. Tunable Graphene Single Electron Transistor

Tunable Graphene Single Electron Transistor

10.1021/nl801225h

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Stampfer, C., Schurtenberger, E., Molitor, F., GÃ¼ttinger, J., Ihn, T., & Ensslin, K. (2008). Tunable Graphene Single Electron Transistor. Nano Letters, 8(8), 2378â2383.

Authors 6

C. Stampfer (first)
E. Schurtenberger (additional)
F. Molitor (additional)
J. Güttinger (additional)
T. Ihn (additional)
K. Ensslin (additional)

References 28 Referenced 325

10.1126/science.1102896 / Science by Novoselov K. S. (2004)
For review see:
10.1038/nmat1849 / Nat. Mater. by Geim A. K. (2007)
aCastro Neto, A. H.; Guinea, F.; Peres, N. M.; Geim, A. K.arXiv:0709.1163v1 [cond-mat.other], 2007.
10.1038/35046000 / Nature by Joachim C. (2000)
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10.1126/science.1150878 / Science by Li X. (2008)
10.1063/1.2827188 / Appl. Phys. Lett. by Stampfer C. (2008)
10.1126/science.1154663 / Science by Ponomarenko L. A. (2008)
10.1126/science.1144359 / Science by Miao F. (2007)
{'key': 'ref17/cit17', 'series-title': 'NATO Series', 'volume-title': 'Mesoscopic Electron Transport', 'author': 'Kouwenhoven L. P.', 'year': '1997'} / Mesoscopic Electron Transport / NATO Series by Kouwenhoven L. P. (1997)
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10.1021/nl061702a / Nano Lett. by Graf D. (2007)
10.1103/PhysRevB.76.245426 / Phys. Rev. B by Molitor F. (2007)
Here an offset of 5 V has been used in order to compensate the slightly different doping of the two narrow graphene constrictions. This offset can also be nicely seen atVb2in Figure2c.
See Figure 12.11 in:Ihn, T.,Springer Tracts in Modern Physics192;Springer:Berlin, 2004; p102.
10.1209/epl/i2000-00158-3 / Europhys. Lett. by Furlan M. (2000)
The single level spacing is estimated by Δqm= ℏvF/2(AN/π)1/2, whereAis the area of the graphene island andNis the number of carriers on the island. ForN= 10−100 electrons on the island, we estimate a characteristic energy spacing of 0.75−0.24 meV.
10.1103/PhysRevLett.80.4522 / Phys. Rev. Lett. by Patel S. R. (1998)
10.1103/PhysRevLett.86.2118 / Phys. Rev. Lett. by Lüscher S. (2001)

Dates

Type	When
Created	17 years, 1 month ago (July 22, 2008, 4:02 a.m.)
Deposited	2 years, 5 months ago (March 13, 2023, 10:06 a.m.)
Indexed	1 day, 14 hours ago (Aug. 23, 2025, 9:15 p.m.)
Issued	17 years, 1 month ago (July 22, 2008)
Published	17 years, 1 month ago (July 22, 2008)
Published Online	17 years, 1 month ago (July 22, 2008)
Published Print	17 years ago (Aug. 13, 2008)

Funders 0

None

BibTeX

@article{Stampfer_2008, title={Tunable Graphene Single Electron Transistor}, volume={8}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl801225h}, DOI={10.1021/nl801225h}, number={8}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Stampfer, C. and Schurtenberger, E. and Molitor, F. and Güttinger, J. and Ihn, T. and Ensslin, K.}, year={2008}, month=jul, pages={2378–2383} }

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