DOI: 10.1021/nl8009523. General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation

General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation

10.1021/nl8009523

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Stamplecoskie, K. G., Ju, L., Farvid, S. S., & Radovanovic, P. V. (2008). General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation. Nano Letters, 8(9), 2674â2681.

Authors 4

Kevin G. Stamplecoskie (first)
Ling Ju (additional)
Shokouh S. Farvid (additional)
Pavle V. Radovanovic (additional)

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Dates

Type	When
Created	17 years ago (Aug. 7, 2008, 4:02 a.m.)
Deposited	2 years, 5 months ago (March 6, 2023, 5:49 a.m.)
Indexed	3 months, 4 weeks ago (April 25, 2025, 2:45 a.m.)
Issued	17 years ago (Aug. 7, 2008)
Published	17 years ago (Aug. 7, 2008)
Published Online	17 years ago (Aug. 7, 2008)
Published Print	16 years, 11 months ago (Sept. 10, 2008)

Funders 0

None

BibTeX

@article{Stamplecoskie_2008, title={General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation}, volume={8}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl8009523}, DOI={10.1021/nl8009523}, number={9}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Stamplecoskie, Kevin G. and Ju, Ling and Farvid, Shokouh S. and Radovanovic, Pavle V.}, year={2008}, month=aug, pages={2674–2681} }

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