DOI: 10.1021/nl301335q. Highly Flexible MoS<sub>2</sub> Thin-Film Transistors with Ion Gel Dielectrics

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

10.1021/nl301335q

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Pu, J., Yomogida, Y., Liu, K.-K., Li, L.-J., Iwasa, Y., & Takenobu, T. (2012). Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics. Nano Letters, 12(8), 4013â4017.

Authors 6

Jiang Pu (first)
Yohei Yomogida (additional)
Keng-Ku Liu (additional)
Lain-Jong Li (additional)
Yoshihiro Iwasa (additional)
Taishi Takenobu (additional)

References 30 Referenced 778

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10.1063/1.3683517 / Appl. Phys. Lett. by Aikawa S. (2012)
10.1109/TED.2011.2109041 / IEEE Trans. Electron Devices by Chien C. W. (2011)

Dates

Type	When
Created	13 years, 1 month ago (July 16, 2012, 12:56 p.m.)
Deposited	2 years, 4 months ago (April 2, 2023, 5:18 p.m.)
Indexed	2 weeks, 3 days ago (Aug. 5, 2025, 8:19 a.m.)
Issued	13 years, 1 month ago (July 18, 2012)
Published	13 years, 1 month ago (July 18, 2012)
Published Online	13 years, 1 month ago (July 18, 2012)
Published Print	13 years ago (Aug. 8, 2012)

Funders 0

None

BibTeX

@article{Pu_2012, title={Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics}, volume={12}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl301335q}, DOI={10.1021/nl301335q}, number={8}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Pu, Jiang and Yomogida, Yohei and Liu, Keng-Ku and Li, Lain-Jong and Iwasa, Yoshihiro and Takenobu, Taishi}, year={2012}, month=jul, pages={4013–4017} }

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