DOI: 10.1021/nl200083f. Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening

Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening

10.1021/nl200083f

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Chiaramonte, T., Tizei, L. H. G., Ugarte, D., & Cotta, M. A. (2011). Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening. Nano Letters, 11(5), 1934â1940.

Authors 4

Thalita Chiaramonte (first)
Luiz H. G. Tizei (additional)
Daniel Ugarte (additional)
Mônica A. Cotta (additional)

References 38 Referenced 19

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Dates

Type	When
Created	14 years, 4 months ago (April 18, 2011, 8:20 a.m.)
Deposited	5 years, 11 months ago (Sept. 27, 2019, 6:29 p.m.)
Indexed	5 hours, 55 minutes ago (Aug. 29, 2025, 5:47 a.m.)
Issued	14 years, 3 months ago (May 11, 2011)
Published	14 years, 3 months ago (May 11, 2011)
Published Print	14 years, 3 months ago (May 11, 2011)

Funders 0

None

BibTeX

@article{Chiaramonte_2011, title={Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening}, volume={11}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl200083f}, DOI={10.1021/nl200083f}, number={5}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Chiaramonte, Thalita and Tizei, Luiz H. G. and Ugarte, Daniel and Cotta, Mônica A.}, year={2011}, month=may, pages={1934–1940} }

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