Crossref
journal-article
American Chemical Society (ACS)
Nano Letters (316)
References
42
Referenced
453
10.1103/PhysRevB.76.205423
/ Phys. Rev. B by Stauber T. (2007)10.1098/rsta.2007.2157
/ Philos. Trans. R. Soc. London, Ser. A by Katsnelson M. I. (2008)10.1007/s12274-008-8043-2
/ Nano Res. by Cresti A. (2008)10.1103/PhysRevB.78.205420
/ Phys. Rev. B by Laakso M. A. (2008)10.7498/aps.57.7132
/ Acta Phys. Sin. by Ouyang F. P. (2008)- S. Das Sarma, S. A., E. H. Hwang, and Enrico Rossi Rev. Mod. Phys., 2010 ,not supplied.
10.1126/science.1158877
/ Science by Geim A. K. (2009)10.1103/RevModPhys.81.109
/ Rev. Mod. Phys. by Castro Neto A. H. (2009)10.1126/science.1102896
/ Science by Novoselov K. S. (2004)10.1063/1.2928234
/ Appl. Phys. Lett. by Liu G. (2008)10.1126/science.1144657
/ Science by Williams J. R. (2007)10.1103/PhysRevB.80.045408
/ Phys. Rev. B by Williams J. R. (2009)10.1166/jnn.2009.042
/ J. Nanosci. Nanotechnol. by Wu J. Y. (2009)10.1021/nl9039636
/ Nano Lett. by Xia F. N. (2010)10.1126/science.1184289
/ Science by Lin Y. M. (2010)10.1109/LED.2009.2034876
/ IEEE Electron Device Lett. by Lin Y. M. (2010)10.1016/j.ssc.2008.02.024
/ Solid State Commun. by Bolotin K. I. (2008){'key': 'ref18/cit18', 'first-page': '527', 'author': 'Nagashio K.', 'year': '2009', 'journal-title': '2009 IEEE Int. Electron Devices Meet.'}
/ 2009 IEEE Int. Electron Devices Meet. by Nagashio K. (2009)10.1016/j.physe.2009.11.080
/ Physica E by Russo S. (2010)10.1103/PhysRevLett.101.026801
/ Phys. Rev. Lett. by Wu X. S. (2008)10.1109/TED.2008.928021
/ IEEE Trans. Electron Devices by Yoon Y. (2008)10.1088/0957-4484/19/34/345204
/ Nanotechnology by Jimenez D. (2008)10.1088/0268-1242/24/1/015007
/ Semicond. Sci. Technol. by Alam K. (2009)10.1063/1.3268788
/ Appl. Phys. Lett. by Tongay S. (2009)10.1116/1.580203
/ J. Vac. Sci. Technol., A by Kastenmeier B. E. E. (1996)10.1143/JJAP.44.1445
/ Jpn. J. Appl. Phys., Part 1 by Lee H. Y. (2005)10.1021/nl801457b
/ Nano Lett. by Bunch J. S. (2008)10.1021/nn103028d
/ ACS Nano by Chen S. S. (2011)10.1063/1.347181
/ J. Appl. Phys. by Morita M. (1990)10.1063/1.3294960
/ J. Appl. Phys. by Zong Z. (2010)10.1103/PhysRevB.81.081408
/ Phys. Rev. B by Vanin M. (2010)10.1016/0038-1101(95)00102-Y
/ Solid-State Electron. by Xiao Z. X. (1995)10.1103/PhysRev.96.28
/ Phys. Rev. by Morin F. J. (1954)10.1017/CBO9780511801914
/ Applied Quantum Mechanics by Levi A. F. J. (2006)10.1103/PhysRevB.33.7077
/ Phys. Rev. B by Tung R. T. (1986){'key': 'ref36/cit36', 'volume-title': 'Semiconductor Physics And Devices', 'author': 'Neamen D. A.', 'year': '2003', 'edition': '3'}
/ Semiconductor Physics And Devices by Neamen D. A. (2003)10.1021/nn800354m
/ ACS Nano by Romero H. E. (2008)10.1103/PhysRevLett.98.166802
/ Phys. Rev. Lett. by Yan J. (2007)10.1103/PhysRevLett.97.187401
/ Phys. Rev. Lett. by Ferrari A. C. (2006)10.1007/s12274-008-8036-1
/ Nano Res. by Ni Z. H. (2008)10.1021/nn800459e
/ ACS Nano by Ni Z. H. (2008)10.1021/jp806045u
/ J. Phys. Chem. C by Yu T. (2008)
Dates
Type | When |
---|---|
Created | 14 years, 4 months ago (April 25, 2011, 1:03 p.m.) |
Deposited | 2 years, 2 months ago (June 6, 2023, 9:34 a.m.) |
Indexed | 2 days, 13 hours ago (Aug. 26, 2025, 2:30 a.m.) |
Issued | 14 years, 3 months ago (May 11, 2011) |
Published | 14 years, 3 months ago (May 11, 2011) |
Published Print | 14 years, 3 months ago (May 11, 2011) |
@article{Chen_2011, title={Graphene-Silicon Schottky Diodes}, volume={11}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl104364c}, DOI={10.1021/nl104364c}, number={5}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Chen, Chun-Chung and Aykol, Mehmet and Chang, Chia-Chi and Levi, A. F. J. and Cronin, Stephen B.}, year={2011}, month=may, pages={1863–1867} }