DOI: 10.1021/nl103306a. Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

10.1021/nl103306a

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Xia, J. L., Chen, F., Wiktor, P., Ferry, D. K., & Tao, N. J. (2010). Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications. Nano Letters, 10(12), 5060â5064.

Authors 5

J. L. Xia (first)
F. Chen (additional)
P. Wiktor (additional)
D. K. Ferry (additional)
N. J. Tao (additional)

References 33 Referenced 65

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Dates

Type	When
Created	14 years, 9 months ago (Nov. 19, 2010, 11:36 a.m.)
Deposited	2 years, 4 months ago (April 14, 2023, 11:39 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 2, 2024, 2:26 a.m.)
Issued	14 years, 9 months ago (Nov. 19, 2010)
Published	14 years, 9 months ago (Nov. 19, 2010)
Published Online	14 years, 9 months ago (Nov. 19, 2010)
Published Print	14 years, 8 months ago (Dec. 8, 2010)

Funders 0

None

BibTeX

@article{Xia_2010, title={Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications}, volume={10}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl103306a}, DOI={10.1021/nl103306a}, number={12}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Xia, J. L. and Chen, F. and Wiktor, P. and Ferry, D. K. and Tao, N. J.}, year={2010}, month=nov, pages={5060–5064} }

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