DOI: 10.1021/nl100157w. P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

10.1021/nl100157w

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Dufouleur, J., Colombo, C., Garma, T., Ketterer, B., Uccelli, E., Nicotra, M., & Fontcuberta i Morral, A. (2010). P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires. Nano Letters, 10(5), 1734â1740.

Authors 7

Joseph Dufouleur (first)
Carlo Colombo (additional)
Tonko Garma (additional)
Bernt Ketterer (additional)
Emanuele Uccelli (additional)
Marco Nicotra (additional)
Anna Fontcuberta i Morral (additional)

References 63 Referenced 109

10.1073/pnas.0406368102 / Proc. Natl. Acad. Sci. U.S.A. by Wang W. U. (2005)
10.1038/nbt1138 / Nat. Biotechnol. by Zheng G. F. (2005)
10.1126/science.291.5505.851 / Science by Cui Y. (2001)
10.1038/35051047 / Nature by Duan X. F. (2001)
10.1038/29954 / Nature by Tans S. J. (1998)
10.1021/nl025875l / Nano Lett by Cui Y. (2003)
10.1038/nnano.2007.411 / Nature Nanotechnol. by Chan C. K. (2008)
10.1021/nl0727157 / Nano Lett. by Chan C. K. (2008)
10.1063/1.1901835 / J. Appl. Phys. by Kayes B. M. (2005)
10.1038/nature06181 / Nature by Tian B. Z. (2007)
10.1038/nature06381 / Nature by Hochbaum A. I. (2008)
10.1038/nature06458 / Nature by Boukai A. I. (2008)
10.1126/science.1113523 / Science by Doh Y. J. (2005)
10.1063/1.1606889 / Appl. Phys. Lett. by Thelander C. (2003)
10.1103/PhysRevLett.99.036801 / Phys. Rev. Lett. by Pfund A. (2007)
10.1021/nl900250g / Nano Lett. by van Weert M. H. M. (2009)
{'key': 'ref17/cit17', 'author': 'Ruppert C.', 'year': '2010', 'journal-title': 'Nano Lett.'} / Nano Lett. by Ruppert C. (2010)
10.1103/RevModPhys.64.849 / Rev. Mod. Phys. by Kastner M. A. (1992)
10.1103/RevModPhys.73.783 / Rev. Mod. Phys. by Kroemer H. (2001)
10.1103/RevModPhys.76.323 / Rev. Mod. Phys. by Zutic I. (2004)
10.1103/PhysRevLett.60.848 / Phys. Rev. Lett. by Wanwees B. J. (1988)
10.1103/PhysRevLett.55.2200 / Phys. Rev. Lett. by Heiblum M. (1985)
10.1126/science.278.5344.1792 / Science by Schedelbeck G. (1997)
10.1002/smll.200701091 / Small by Fontcuberta i Morral A. (2008)
10.1039/b816585h / J. Mater. Chem. by Heigoldt M. (2009)
{'key': 'ref24/cit24', 'first-page': '454225', 'volume': '20', 'author': 'Spirkoska D.', 'year': '2008', 'journal-title': 'J. Phys.: Condens. Matter'} / J. Phys.: Condens. Matter by Spirkoska D. (2008)
10.1038/nature06472 / Nature by Gerardot B. D. (2008)
10.1209/0295-5075/84/57004 / Eur. Phys. Lett. by Komijani Y. (2008)
10.1021/nl049230s / Nano Lett. by Bjork M. T. (2004)
10.1021/nl072024a / Nano Lett. by Jiang X. C. (2007)
10.1002/smll.200600379 / Small by Dayeh S. A. (2007)
10.1088/0957-4484/20/40/405206 / Nanotechnology by Richter T. (2009)
10.1063/1.3159626 / Appl. Phys. Lett. by Frielinghaus R. (2009)
10.1038/nature01141 / Nature by Lauhon L. J. (2002)
10.1021/jp0009305 / J. Phys. Chem. B by Cui Y. (2000)
10.1126/science.291.5505.851 / Science by Cui Y. (2001)
10.1002/adma.200803865 / Adv. Mater. by Allen J. E. (2009)
10.1038/nnano.2009.51 / Nat. Nanotechnol. by Perea D. E. (2009)
10.1038/nnano.2009.43 / Nat. Nanotechnol. by Garnett E. C. (2009)
10.1021/nl050747t / Nano Lett. by Radovanovic P. V. (2005)
10.1063/1.3065536 / J. Appl. Phys. by Gutsche C. (2009)
10.1063/1.1657165 / J. Appl. Phys. by Spitzer W. G. (1969)
10.1103/PhysRevB.54.10288 / Phys. Rev. B by Domke C. (1996)
{'key': 'ref42/cit42', 'volume-title': 'Materials Fundamentals of Molecular Beam Epitaxy', 'author': 'Tsao J. Y.', 'year': '1993'} / Materials Fundamentals of Molecular Beam Epitaxy by Tsao J. Y. (1993)
{'key': 'ref43/cit43', 'volume-title': 'Organometallic Vapor-Phase Epitaxy: Theory and Practice', 'author': 'Stringfellow G. B.', 'year': '1999'} / Organometallic Vapor-Phase Epitaxy: Theory and Practice by Stringfellow G. B. (1999)
10.1103/PhysRevB.77.155326 / Phys. Rev. B by Colombo C. (2008)
10.1063/1.3125435 / Appl. Phys. Lett. by Colombo C. (2009)
To ensure that the silicon flux did not have any perturbation in the nucleation of the nanowires, the silicon shutter was opened 15 min after the start of the deposition process, which effectively corresponds to 10 minutes of growth, as the incubation time is approximately 5 min.
{'key': 'ref47/cit47', 'volume-title': 'Introduction to semiconductors', 'author': 'Grundmann M.', 'year': '2007'} / Introduction to semiconductors by Grundmann M. (2007)
10.1088/0268-1242/9/10/001 / Semicond. Sci. Technol. by Newman R. C. (1994)
10.1103/PhysRevB.80.245325 / Phys. Rev. B by Spirkoska D. (2009)
10.1103/PhysRevB.80.245324 / Phys. Rev. B by Zardo I. (2009)
{'key': 'ref51/cit51', 'first-page': '11864', 'volume': '104', 'author': 'Yu J.-Y,', 'year': '2000', 'journal-title': 'J. Phys. Chem. B'} / J. Phys. Chem. B by Yu J.-Y, (2000)
A sequence consisting in Pd/Ti/Au (40/10/280 nm) also worked well for the obtaining of ohmic contacts.
{'key': 'ref53/cit53', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze S. M.', 'year': '1981', 'edition': '2'} / Physics of Semiconductor Devices by Sze S. M. (1981)
10.1063/1.357892 / J. Appl. Phys. by Ashwin M. J. (1994)
10.1103/PhysRevB.27.985 / Phys. Rev. B by Aspnes D. E. (1983)
One should note that a saturation of the Si(LVM) signal is not observed, even if the shell reaches a maximum of 50 nm at the base of the nanowire. There are mainly two reasons that account for this: (1) The Raman measurements are realized between the two contacts, which means that we cannot measure at the exact base of the nanowire (where the shell would be 50 nm), but always at a distance of at least 2 microns. (2) The probe depth is defined as the distance d at which the light intensity is reduced a factore with respect to the incident intensity. This means that the light intensity is strongly reduced but still some scattering is expected at a depth of 50 nm.
10.1063/1.1659616 / J. Appl. Phys. by Rosztoczy F. E. (1971)
{'key': 'ref58/cit58', 'volume-title': 'Binary Alloy Phase Diagrams', 'author': 'Massalki T. B.', 'year': '1990', 'edition': '2'} / Binary Alloy Phase Diagrams by Massalki T. B. (1990)
In this equation we neglect the incorporation of silicon by diffusion through the nanowire walls and the desorption of silicon from the droplet, silicon has an extremely low pressure in these conditions.
{'key': 'ref60/cit60', 'volume-title': 'Chemistry of the Semiconductor Industry', 'author': 'Moss S. J.', 'year': '1997'} / Chemistry of the Semiconductor Industry by Moss S. J. (1997)
10.1063/1.1659807 / J. Appl. Phys. by Ahn B. H. (1971)

Dates

Type	When
Created	15 years, 4 months ago (April 7, 2010, 12:33 p.m.)
Deposited	2 years, 5 months ago (March 8, 2023, 10:43 a.m.)
Indexed	2 months, 1 week ago (June 17, 2025, 1:45 a.m.)
Issued	15 years, 4 months ago (April 7, 2010)
Published	15 years, 4 months ago (April 7, 2010)
Published Online	15 years, 4 months ago (April 7, 2010)
Published Print	15 years, 3 months ago (May 12, 2010)

Funders 0

None

BibTeX

@article{Dufouleur_2010, title={P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires}, volume={10}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl100157w}, DOI={10.1021/nl100157w}, number={5}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Dufouleur, Joseph and Colombo, Carlo and Garma, Tonko and Ketterer, Bernt and Uccelli, Emanuele and Nicotra, Marco and Fontcuberta i Morral, Anna}, year={2010}, month=apr, pages={1734–1740} }

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      "first-page": "3208",
      "DOI": "10.1073/pnas.0406368102",
      "volume": "102",
      "author": "Wang W. U.",
      "year": "2005",
      "journal-title": "Proc. Natl. Acad. Sci. U.S.A."
    },
    {
      "key": "ref2/cit2",
      "doi-asserted-by": "crossref",
      "first-page": "1294",
      "DOI": "10.1038/nbt1138",
      "volume": "23",
      "author": "Zheng G. F.",
      "year": "2005",
      "journal-title": "Nat. Biotechnol."
    },
    {
      "key": "ref3/cit3",
      "doi-asserted-by": "crossref",
      "first-page": "851",
      "DOI": "10.1126/science.291.5505.851",
      "volume": "291",
      "author": "Cui Y.",
      "year": "2001",
      "journal-title": "Science"
    },
    {
      "key": "ref4/cit4",
      "doi-asserted-by": "crossref",
      "first-page": "66",
      "DOI": "10.1038/35051047",
      "volume": "409",
      "author": "Duan X. F.",
      "year": "2001",
      "journal-title": "Nature"
    },
    {
      "key": "ref5/cit5",
      "doi-asserted-by": "crossref",
      "first-page": "49",
      "DOI": "10.1038/29954",
      "volume": "393",
      "author": "Tans S. J.",
      "year": "1998",
      "journal-title": "Nature"
    },
    {
      "key": "ref6/cit6",
      "doi-asserted-by": "crossref",
      "first-page": "149",
      "DOI": "10.1021/nl025875l",
      "volume": "3",
      "author": "Cui Y.",
      "year": "2003",
      "journal-title": "Nano Lett"
    },
    {
      "key": "ref7/cit7",
      "doi-asserted-by": "crossref",
      "first-page": "31",
      "DOI": "10.1038/nnano.2007.411",
      "volume": "3",
      "author": "Chan C. K.",
      "year": "2008",
      "journal-title": "Nature Nanotechnol."
    },
    {
      "key": "ref8/cit8",
      "doi-asserted-by": "crossref",
      "first-page": "307",
      "DOI": "10.1021/nl0727157",
      "volume": "8",
      "author": "Chan C. K.",
      "year": "2008",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref9/cit9",
      "doi-asserted-by": "crossref",
      "first-page": "114302",
      "DOI": "10.1063/1.1901835",
      "volume": "97",
      "author": "Kayes B. M.",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "ref10/cit10",
      "doi-asserted-by": "crossref",
      "first-page": "885",
      "DOI": "10.1038/nature06181",
      "volume": "449",
      "author": "Tian B. Z.",
      "year": "2007",
      "journal-title": "Nature"
    },
    {
      "key": "ref11/cit11",
      "doi-asserted-by": "crossref",
      "first-page": "163",
      "DOI": "10.1038/nature06381",
      "volume": "451",
      "author": "Hochbaum A. I.",
      "year": "2008",
      "journal-title": "Nature"
    },
    {
      "key": "ref12/cit12",
      "doi-asserted-by": "crossref",
      "first-page": "168",
      "DOI": "10.1038/nature06458",
      "volume": "451",
      "author": "Boukai A. I.",
      "year": "2008",
      "journal-title": "Nature"
    },
    {
      "key": "ref13/cit13",
      "doi-asserted-by": "crossref",
      "first-page": "272",
      "DOI": "10.1126/science.1113523",
      "volume": "309",
      "author": "Doh Y. J.",
      "year": "2005",
      "journal-title": "Science"
    },
    {
      "key": "ref14/cit14",
      "doi-asserted-by": "crossref",
      "first-page": "2052",
      "DOI": "10.1063/1.1606889",
      "volume": "83",
      "author": "Thelander C.",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "ref15/cit15",
      "doi-asserted-by": "crossref",
      "first-page": "036801",
      "DOI": "10.1103/PhysRevLett.99.036801",
      "volume": "99",
      "author": "Pfund A.",
      "year": "2007",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "ref16/cit16",
      "doi-asserted-by": "crossref",
      "first-page": "1989",
      "DOI": "10.1021/nl900250g",
      "volume": "9",
      "author": "van Weert M. H. M.",
      "year": "2009",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref17/cit17",
      "author": "Ruppert C.",
      "year": "2010",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref18/cit18",
      "doi-asserted-by": "crossref",
      "first-page": "849",
      "DOI": "10.1103/RevModPhys.64.849",
      "volume": "64",
      "author": "Kastner M. A.",
      "year": "1992",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "ref18/cit18a",
      "doi-asserted-by": "crossref",
      "first-page": "783",
      "DOI": "10.1103/RevModPhys.73.783",
      "volume": "73",
      "author": "Kroemer H.",
      "year": "2001",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "ref18/cit18b",
      "doi-asserted-by": "crossref",
      "first-page": "323",
      "DOI": "10.1103/RevModPhys.76.323",
      "volume": "76",
      "author": "Zutic I.",
      "year": "2004",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "ref19/cit19",
      "doi-asserted-by": "crossref",
      "first-page": "848",
      "DOI": "10.1103/PhysRevLett.60.848",
      "volume": "60",
      "author": "Wanwees B. J.",
      "year": "1988",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "ref20/cit20",
      "doi-asserted-by": "crossref",
      "first-page": "2200",
      "DOI": "10.1103/PhysRevLett.55.2200",
      "volume": "55",
      "author": "Heiblum M.",
      "year": "1985",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "ref21/cit21",
      "doi-asserted-by": "crossref",
      "first-page": "5344",
      "DOI": "10.1126/science.278.5344.1792",
      "volume": "278",
      "author": "Schedelbeck G.",
      "year": "1997",
      "journal-title": "Science"
    },
    {
      "key": "ref22/cit22",
      "doi-asserted-by": "crossref",
      "first-page": "899",
      "DOI": "10.1002/smll.200701091",
      "volume": "4",
      "author": "Fontcuberta i Morral A.",
      "year": "2008",
      "journal-title": "Small"
    },
    {
      "key": "ref23/cit23",
      "doi-asserted-by": "crossref",
      "first-page": "840",
      "DOI": "10.1039/b816585h",
      "volume": "19",
      "author": "Heigoldt M.",
      "year": "2009",
      "journal-title": "J. Mater. Chem."
    },
    {
      "key": "ref24/cit24",
      "first-page": "454225",
      "volume": "20",
      "author": "Spirkoska D.",
      "year": "2008",
      "journal-title": "J. Phys.: Condens. Matter"
    },
    {
      "key": "ref25/cit25",
      "doi-asserted-by": "crossref",
      "first-page": "441",
      "DOI": "10.1038/nature06472",
      "volume": "451",
      "author": "Gerardot B. D.",
      "year": "2008",
      "journal-title": "Nature"
    },
    {
      "key": "ref26/cit26",
      "doi-asserted-by": "crossref",
      "first-page": "57004",
      "DOI": "10.1209/0295-5075/84/57004",
      "volume": "84",
      "author": "Komijani Y.",
      "year": "2008",
      "journal-title": "Eur. Phys. Lett."
    },
    {
      "key": "ref27/cit27",
      "doi-asserted-by": "crossref",
      "first-page": "1621",
      "DOI": "10.1021/nl049230s",
      "volume": "4",
      "author": "Bjork M. T.",
      "year": "2004",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref28/cit28",
      "doi-asserted-by": "crossref",
      "first-page": "3214",
      "DOI": "10.1021/nl072024a",
      "volume": "7",
      "author": "Jiang X. C.",
      "year": "2007",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref29/cit29",
      "doi-asserted-by": "crossref",
      "first-page": "326",
      "DOI": "10.1002/smll.200600379",
      "volume": "3",
      "author": "Dayeh S. A.",
      "year": "2007",
      "journal-title": "Small"
    },
    {
      "key": "ref30/cit30",
      "doi-asserted-by": "crossref",
      "first-page": "405206",
      "DOI": "10.1088/0957-4484/20/40/405206",
      "volume": "20",
      "author": "Richter T.",
      "year": "2009",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "ref31/cit31",
      "doi-asserted-by": "crossref",
      "first-page": "252107",
      "DOI": "10.1063/1.3159626",
      "volume": "94",
      "author": "Frielinghaus R.",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "ref32/cit32",
      "doi-asserted-by": "crossref",
      "first-page": "57",
      "DOI": "10.1038/nature01141",
      "volume": "420",
      "author": "Lauhon L. J.",
      "year": "2002",
      "journal-title": "Nature"
    },
    {
      "key": "ref33/cit33",
      "doi-asserted-by": "crossref",
      "first-page": "5213",
      "DOI": "10.1021/jp0009305",
      "volume": "104",
      "author": "Cui Y.",
      "year": "2000",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "ref34/cit34",
      "doi-asserted-by": "crossref",
      "first-page": "851",
      "DOI": "10.1126/science.291.5505.851",
      "volume": "291",
      "author": "Cui Y.",
      "year": "2001",
      "journal-title": "Science"
    },
    {
      "key": "ref35/cit35",
      "doi-asserted-by": "crossref",
      "first-page": "3067",
      "DOI": "10.1002/adma.200803865",
      "volume": "21",
      "author": "Allen J. E.",
      "year": "2009",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "ref36/cit36",
      "doi-asserted-by": "crossref",
      "first-page": "315",
      "DOI": "10.1038/nnano.2009.51",
      "volume": "4",
      "author": "Perea D. E.",
      "year": "2009",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "ref37/cit37",
      "doi-asserted-by": "crossref",
      "first-page": "311",
      "DOI": "10.1038/nnano.2009.43",
      "volume": "4",
      "author": "Garnett E. C.",
      "year": "2009",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "ref38/cit38",
      "doi-asserted-by": "crossref",
      "first-page": "1407",
      "DOI": "10.1021/nl050747t",
      "volume": "5",
      "author": "Radovanovic P. V.",
      "year": "2005",
      "journal-title": "Nano Lett."
    },
    {
      "key": "ref39/cit39",
      "doi-asserted-by": "crossref",
      "first-page": "024305",
      "DOI": "10.1063/1.3065536",
      "volume": "105",
      "author": "Gutsche C.",
      "year": "2009",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "ref40/cit40",
      "doi-asserted-by": "crossref",
      "first-page": "4200",
      "DOI": "10.1063/1.1657165",
      "volume": "40",
      "author": "Spitzer W. G.",
      "year": "1969",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "ref41/cit41",
      "doi-asserted-by": "crossref",
      "first-page": "10288",
      "DOI": "10.1103/PhysRevB.54.10288",
      "volume": "54",
      "author": "Domke C.",
      "year": "1996",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "ref42/cit42",
      "volume-title": "Materials Fundamentals of Molecular Beam Epitaxy",
      "author": "Tsao J. Y.",
      "year": "1993"
    },
    {
      "key": "ref43/cit43",
      "volume-title": "Organometallic Vapor-Phase Epitaxy: Theory and Practice",
      "author": "Stringfellow G. B.",
      "year": "1999"
    },
    {
      "key": "ref44/cit44",
      "doi-asserted-by": "crossref",
      "first-page": "155326",
      "DOI": "10.1103/PhysRevB.77.155326",
      "volume": "77",
      "author": "Colombo C.",
      "year": "2008",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "ref45/cit45",
      "doi-asserted-by": "crossref",
      "first-page": "173108",
      "DOI": "10.1063/1.3125435",
      "volume": "94",
      "author": "Colombo C.",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "ref46/cit46",
      "unstructured": "To ensure that the silicon flux did not have any perturbation in the nucleation of the nanowires, the silicon shutter was opened 15 min after the start of the deposition process, which effectively corresponds to 10 minutes of growth, as the incubation time is approximately 5 min."
    },
    {
      "key": "ref47/cit47",
      "volume-title": "Introduction to semiconductors",
      "author": "Grundmann M.",
      "year": "2007"
    },
    {
      "key": "ref48/cit48",
      "doi-asserted-by": "crossref",
      "first-page": "1749",
      "DOI": "10.1088/0268-1242/9/10/001",
      "volume": "9",
      "author": "Newman R. C.",
      "year": "1994",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "ref49/cit49",
      "doi-asserted-by": "crossref",
      "first-page": "245325",
      "DOI": "10.1103/PhysRevB.80.245325",
      "volume": "80",
      "author": "Spirkoska D.",
      "year": "2009",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "ref50/cit50",
      "doi-asserted-by": "crossref",
      "first-page": "245324",
      "DOI": "10.1103/PhysRevB.80.245324",
      "volume": "80",
      "author": "Zardo I.",
      "year": "2009",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "ref51/cit51",
      "first-page": "11864",
      "volume": "104",
      "author": "Yu J.-Y,",
      "year": "2000",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "ref52/cit52",
      "unstructured": "A sequence consisting in Pd/Ti/Au (40/10/280 nm) also worked well for the obtaining of ohmic contacts."
    },
    {
      "key": "ref53/cit53",
      "volume-title": "Physics of Semiconductor Devices",
      "author": "Sze S. M.",
      "year": "1981",
      "edition": "2"
    },
    {
      "key": "ref54/cit54",
      "doi-asserted-by": "crossref",
      "first-page": "7839",
      "DOI": "10.1063/1.357892",
      "volume": "76",
      "author": "Ashwin M. J.",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "ref55/cit55",
      "doi-asserted-by": "crossref",
      "first-page": "997",
      "DOI": "10.1103/PhysRevB.27.985",
      "volume": "27",
      "author": "Aspnes D. E.",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "ref56/cit56",
      "unstructured": "One should note that a saturation of the Si(LVM) signal is not observed, even if the shell reaches a maximum of 50 nm at the base of the nanowire. There are mainly two reasons that account for this: (1) The Raman measurements are realized between the two contacts, which means that we cannot measure at the exact base of the nanowire (where the shell would be 50 nm), but always at a distance of at least 2 microns. (2) The probe depth is defined as the distance d at which the light intensity is reduced a factore with respect to the incident intensity. This means that the light intensity is strongly reduced but still some scattering is expected at a depth of 50 nm."
    },
    {
      "key": "ref57/cit57",
      "doi-asserted-by": "crossref",
      "first-page": "426",
      "DOI": "10.1063/1.1659616",
      "volume": "42",
      "author": "Rosztoczy F. E.",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "ref58/cit58",
      "volume-title": "Binary Alloy Phase Diagrams",
      "author": "Massalki T. B.",
      "year": "1990",
      "edition": "2"
    },
    {
      "key": "ref59/cit59",
      "unstructured": "In this equation we neglect the incorporation of silicon by diffusion through the nanowire walls and the desorption of silicon from the droplet, silicon has an extremely low pressure in these conditions."
    },
    {
      "key": "ref60/cit60",
      "volume-title": "Chemistry of the Semiconductor Industry",
      "author": "Moss S. J.",
      "year": "1997"
    },
    {
      "key": "ref61/cit61",
      "doi-asserted-by": "crossref",
      "first-page": "4512",
      "DOI": "10.1063/1.1659807",
      "volume": "42",
      "author": "Ahn B. H.",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    }
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