DOI: 10.1021/nl061379b. Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors

Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors

10.1021/nl061379b

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Chen, Y.-F., & Fuhrer, M. S. (2006). Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors. Nano Letters, 6(9), 2158â2162.

Authors 2

Yung-Fu Chen (first)
Michael S. Fuhrer (additional)

References 30 Referenced 55

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Dates

Type	When
Created	19 years ago (July 27, 2006, 5:01 a.m.)
Deposited	2 years, 5 months ago (March 9, 2023, 8:03 a.m.)
Indexed	1 year, 7 months ago (Jan. 9, 2024, 3:12 p.m.)
Issued	19 years ago (July 27, 2006)
Published	19 years ago (July 27, 2006)
Published Online	19 years ago (July 27, 2006)
Published Print	18 years, 11 months ago (Sept. 1, 2006)

Funders 0

None

BibTeX

@article{Chen_2006, title={Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors}, volume={6}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl061379b}, DOI={10.1021/nl061379b}, number={9}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Chen, Yung-Fu and Fuhrer, Michael S.}, year={2006}, month=jul, pages={2158–2162} }

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