DOI: 10.1021/nl0486517. High Inversion Current in Silicon Nanowire Field Effect Transistors

High Inversion Current in Silicon Nanowire Field Effect Transistors

10.1021/nl0486517

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Koo, S.-M., Fujiwara, A., Han, J.-P., Vogel, E. M., Richter, C. A., & Bonevich, J. E. (2004). High Inversion Current in Silicon Nanowire Field Effect Transistors. Nano Letters, 4(11), 2197â2201.

Authors 6

Sang-Mo Koo (first)
Akira Fujiwara (additional)
Jin-Ping Han (additional)
Eric M. Vogel (additional)
Curt A. Richter (additional)
John E. Bonevich (additional)

References 22 Referenced 79

10.1038/29959 / Nature by Tans S. J. (1998)
{'key': 'nl0486517b00001/nl0486517b00001_2', 'volume-title': 'AIP Conf. Proc.', 'author': 'Durkop T.', 'year': '2002'} / AIP Conf. Proc. by Durkop T. (2002)
{'key': 'nl0486517b00002/nl0486517b00002_1', 'first-page': '152', 'volume': '3', 'author': 'Cui Y.', 'year': '2003', 'journal-title': 'Nano Lett.'} / Nano Lett. by Cui Y. (2003)
10.1103/PhysRevLett.87.256805 / Phys. Rev. Lett. by Martel R. (2001)
{'key': 'nl0486517b00004/nl0486517b00004_1', 'first-page': '4', 'volume': '66', 'author': 'Nakanishi T.', 'year': '2002', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B by Nakanishi T. (2002)
{'key': 'nl0486517b00005/nl0486517b00005_1', 'first-page': '3263', 'volume': '37', 'author': 'Fujiwara A.', 'year': '1998', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. by Fujiwara A. (1998)
10.1088/0953-8984/14/22/302 / Condens. Matter by Takahashi Y. (2002)
{'key': 'nl0486517b00006/nl0486517b00006_1', 'first-page': '2433', 'volume': '42', 'author': 'Fujiwara A.', 'year': '2003', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. by Fujiwara A. (2003)
{'key': 'nl0486517b00007/nl0486517b00007_1', 'first-page': '325', 'volume': '42', 'author': 'Nagase M.', 'year': '2003', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. by Nagase M. (2003)
{'key': 'nl0486517b00008/nl0486517b00008_1', 'first-page': '747', 'volume': '12', 'author': 'Fossum J. G.', 'year': '2003', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. by Fossum J. G. (2003)
10.1109/16.543036 / IEEE Trans. Electron Devices by Hauser J. R. (1996)
10.1109/16.277365 / IEEE Trans. Electron Devices by Sherony M. J. (1994)
{'key': 'nl0486517b00011/nl0486517b00011_1', 'first-page': '2850', 'volume': '10', 'author': 'Liu H. I.', 'year': '1992', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B by Liu H. I. (1992)
{'key': 'nl0486517b00012/nl0486517b00012_1', 'first-page': '2537', 'volume': '11', 'author': 'Liu H. I.', 'year': '1993', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B by Liu H. I. (1993)
{'key': 'nl0486517b00013/nl0486517b00013_1', 'first-page': '1385', 'volume': '64', 'author': 'Liu H. I.', 'year': '1994', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Liu H. I. (1994)
10.1143/JJAP.40.L29 / Jpn. J. Appl. Phys. by Horiguchi S. (2001)
{'key': 'nl0486517b00015/nl0486517b00015_1', 'volume-title': 'Symp. Proc.', 'author': 'Shiraishi K.', 'year': '1999'} / Symp. Proc. by Shiraishi K. (1999)
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{'key': 'nl0486517b00017/nl0486517b00017_1', 'first-page': '26', 'volume': '23', 'author': 'Hoyt J. L.', 'year': '2002', 'journal-title': 'IEDM Technol. Digest'} / IEDM Technol. Digest by Hoyt J. L. (2002)
{'key': 'nl0486517b00018/nl0486517b00018_1', 'first-page': '1294', 'volume': '37', 'author': 'Takagi S.', 'year': '1998', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. by Takagi S. (1998)
{'key': 'nl0486517b00019/nl0486517b00019_1', 'first-page': '102', 'volume': '15', 'author': 'Wesler J.', 'year': '1994', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. by Wesler J. (1994)
{'key': 'nl0486517b00020/nl0486517b00020_1', 'first-page': '3', 'author': 'Rim K.', 'year': '2003', 'journal-title': 'IEDM Technol. Digest'} / IEDM Technol. Digest by Rim K. (2003)

Dates

Type	When
Created	20 years, 9 months ago (Nov. 10, 2004, 1:16 a.m.)
Deposited	2 years, 5 months ago (March 9, 2023, 3:13 a.m.)
Indexed	1 year ago (July 30, 2024, 1:58 p.m.)
Issued	20 years, 10 months ago (Sept. 30, 2004)
Published	20 years, 10 months ago (Sept. 30, 2004)
Published Online	20 years, 10 months ago (Sept. 30, 2004)
Published Print	20 years, 9 months ago (Nov. 1, 2004)

Funders 0

None

BibTeX

@article{Koo_2004, title={High Inversion Current in Silicon Nanowire Field Effect Transistors}, volume={4}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/nl0486517}, DOI={10.1021/nl0486517}, number={11}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Koo, Sang-Mo and Fujiwara, Akira and Han, Jin-Ping and Vogel, Eric M. and Richter, Curt A. and Bonevich, John E.}, year={2004}, month=sep, pages={2197–2201} }

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