DOI: 10.1021/ja9005767. Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors

Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors

10.1021/ja9005767

Crossref journal-article

American Chemical Society (ACS)

Journal of the American Chemical Society (316)

Bibliography

Xie, R., Rutherford, M., & Peng, X. (2009). Formation of High-Quality IâIIIâVI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors. Journal of the American Chemical Society, 131(15), 5691â5697.

Authors 3

Renguo Xie (first)
Michael Rutherford (additional)
Xiaogang Peng (additional)

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Dates

Type	When
Created	16 years, 5 months ago (March 30, 2009, 3:28 p.m.)
Deposited	2 years, 5 months ago (March 7, 2023, 1:03 a.m.)
Indexed	3 days, 17 hours ago (Aug. 27, 2025, 11:59 a.m.)
Issued	16 years, 5 months ago (March 30, 2009)
Published	16 years, 5 months ago (March 30, 2009)
Published Online	16 years, 5 months ago (March 30, 2009)
Published Print	16 years, 4 months ago (April 22, 2009)

Funders 0

None

BibTeX

@article{Xie_2009, title={Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors}, volume={131}, ISSN={1520-5126}, url={http://dx.doi.org/10.1021/ja9005767}, DOI={10.1021/ja9005767}, number={15}, journal={Journal of the American Chemical Society}, publisher={American Chemical Society (ACS)}, author={Xie, Renguo and Rutherford, Michael and Peng, Xiaogang}, year={2009}, month=mar, pages={5691–5697} }

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  "URL": "http://dx.doi.org/10.1021/ja9005767",
  "relation": {},
  "ISSN": [
    "0002-7863",
    "1520-5126"
  ],
  "subject": [],
  "container-title-short": "J. Am. Chem. Soc.",
  "published": {
    "date-parts": [
      [
        2009,
        3,
        30
      ]
    ]
  }
}