DOI: 10.1021/cm062352w. Air Stable <i>n</i>-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

Air Stable n-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

10.1021/cm062352w

Crossref journal-article

American Chemical Society (ACS)

Chemistry of Materials (316)

Authors 6

H. Z. Chen (first)
M. M. Ling (additional)
X. Mo (additional)
M. M. Shi (additional)
M. Wang (additional)
Z. Bao (additional)

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Dates

Type	When
Created	18 years, 6 months ago (Feb. 2, 2007, 1:29 p.m.)
Deposited	3 years, 10 months ago (Oct. 17, 2021, 11:57 a.m.)
Indexed	2 days, 5 hours ago (Aug. 23, 2025, 9:15 p.m.)
Issued	18 years, 6 months ago (Jan. 30, 2007)
Published	18 years, 6 months ago (Jan. 30, 2007)
Published Online	18 years, 6 months ago (Jan. 30, 2007)
Published Print	18 years, 6 months ago (Feb. 1, 2007)

Funders 0

None

BibTeX

@article{Chen_2007, title={Air Stable n-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides}, volume={19}, ISSN={1520-5002}, url={http://dx.doi.org/10.1021/cm062352w}, DOI={10.1021/cm062352w}, number={4}, journal={Chemistry of Materials}, publisher={American Chemical Society (ACS)}, author={Chen, H. Z. and Ling, M. M. and Mo, X. and Shi, M. M. and Wang, M. and Bao, Z.}, year={2007}, month=jan, pages={816–824} }

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