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journal-article
American Chemical Society (ACS)
Chemistry of Materials (316)
References
33
Referenced
43
10.1116/1.571350
/ J. Vac. Sci. Technol. by Maniv S. (1982)10.1116/1.580437
/ J. Vac. Sci. Technol. by Kim Y. J. (1997)10.1016/S0022-0248(00)00434-6
/ J. Cryst. Growth. by Ryu Y. R. (2000)10.1016/S0169-4332(99)00330-X
/ Appl. Surf. Sci. by Yousfi E. B. (2000)10.1016/S0254-0584(00)00217-0
/ Mater. Chem. Phys. by Mane R. S. (2000)10.1149/1.2130012
/ J. Electrochem. Soc. by Lau C. K. (1980)10.1063/1.91960
/ Appl. Phys. Lett. by Ghandhi S. K. (1980)10.1143/JJAP.30.L441
/ Jpn. J. Appl. Phys. by Wenas W. W. (1991)10.1088/0268-1242/13/7/022
/ Semicond. Sci. Technol. by Hahn B. (1998)10.1002/crat.2170240306
/ Cryst. Res. Technol. by Kaufmann T. (1989)10.1063/1.94243
/ J. Appl. Phys. Lett. by Smith F. T. (1983)10.1063/1.369577
/ J. Appl. Phys. by Gorla C. R. (1999)10.4028/www.scientific.net/MSF.343-346.531
/ Mater. Sci. Forum by Veith M. (2000)10.1002/1521-3862(200008)6:4<155::AID-CVDE155>3.0.CO;2-Y
/ Chem. Vap. Deposition by Gleizes A. N. (2000)10.1002/cvde.19960020302
/ Chem. Vap. Deposition by Bochmann M. (1996)10.1016/S0277-5387(00)80252-1
/ Polyhedron by Senzaki Y. (1994)10.1016/0022-0248(80)90098-6
/ J. Cryst. Growth by Takahashi Y. (1980)10.1016/S0277-5387(99)00352-6
/ J. Polyhedron by Byrom C. (2000){'key': 'cm0204324b00019/cm0204324b00019_1', 'first-page': 'L2', 'volume': '87', 'author': 'Evans M. A. H.', 'year': '1982', 'journal-title': 'Thin Solid Films'}
/ Thin Solid Films by Evans M. A. H. (1982)10.1016/0022-0248(89)90662-3
/ J. Cryst. Growth by Frigo D. M. (1989)10.1021/om00049a036
/ Organometallics by Hursthouse M. B. (1991)10.1016/S0277-5387(00)84595-7
/ Polyhedron by Malik M. A. (1993)10.1021/cm00018a007
/ Chem. Mater. by Malik M. A. (1991)10.1039/jm9920200949
/ J. Mater. Chem. by Hursthouse M. B. (1992)10.1021/ic00019a042
/ Inorg. Chem. by Belforte A. (1991)10.1063/1.121219
/ Appl. Phys. Lett. by Muensitand S. (1998)- Puchert, M. Ph.D. Thesis, UNSW, Sydney, Australia, 1996.
10.3891/acta.chem.scand.41a-0548
/ Acta Chem. Scand. by Hiltunen L. (1987)10.1021/cm00058a020
/ Chem. Mater. by Marr G. L. (1995)10.1016/0022-0248(93)90861-P
/ J. Cryst. Growth by Fujimura N. (1993)- Hellwege, K. H.; Hellwege, A. M.Numerical Data and FunctionalRelationships in Science and Technology; Springer-Verlag: Berlin, 1964; group III, Vol. 2, p 58.
-
Hoffman, R. W.Physics of Non Metallic Thin Films; Plenum: New York, 1976; p 273.
(
10.1007/978-1-4684-0847-8_12
) 10.1116/1.580050
/ J. Vac. Sci. Technol. A by Puchert M. K. (1996)
Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 21, 2002, 12:48 a.m.) |
Deposited | 2 years, 5 months ago (March 8, 2023, 2:34 p.m.) |
Indexed | 5 months, 1 week ago (March 22, 2025, 4:37 a.m.) |
Issued | 22 years, 11 months ago (Oct. 1, 2002) |
Published | 22 years, 11 months ago (Oct. 1, 2002) |
Published Online | 22 years, 11 months ago (Oct. 1, 2002) |
Published Print | 22 years, 11 months ago (Oct. 1, 2002) |
@article{Petrella_2002, title={Single-Source Chemical Vapor Deposition Growth of ZnO Thin Films Using Zn4O(CO2NEt2)6}, volume={14}, ISSN={1520-5002}, url={http://dx.doi.org/10.1021/cm0204324}, DOI={10.1021/cm0204324}, number={10}, journal={Chemistry of Materials}, publisher={American Chemical Society (ACS)}, author={Petrella, A. J. and Deng, H. and Roberts, N. K. and Lamb, R. N.}, year={2002}, month=oct, pages={4339–4342} }