Crossref journal-article
American Chemical Society (ACS)
ACS Applied Materials & Interfaces (316)
Bibliography

Cheng, L., Qin, X., Lucero, A. T., Azcatl, A., Huang, J., Wallace, R. M., Cho, K., & Kim, J. (2014). Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone. ACS Applied Materials & Interfaces, 6(15), 11834–11838.

Authors 8
  1. Lanxia Cheng (first)
  2. Xiaoye Qin (additional)
  3. Antonio T. Lucero (additional)
  4. Angelica Azcatl (additional)
  5. Jie Huang (additional)
  6. Robert M. Wallace (additional)
  7. Kyeongjae Cho (additional)
  8. Jiyoung Kim (additional)
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Dates
Type When
Created 11 years, 1 month ago (July 15, 2014, 4:36 p.m.)
Deposited 2 years, 4 months ago (April 15, 2023, 12:05 a.m.)
Indexed 1 month, 1 week ago (July 16, 2025, 7:46 a.m.)
Issued 11 years, 1 month ago (July 21, 2014)
Published 11 years, 1 month ago (July 21, 2014)
Published Online 11 years, 1 month ago (July 21, 2014)
Published Print 11 years ago (Aug. 13, 2014)
Funders 2
  1. LEAST
  2. National Institute of Standards and Technology 10.13039/100000161

    Region: Americas

    gov (National government)

    Labels4
    1. U.S. National Institute of Standards and Technology
    2. National Institute for Standards and Technology
    3. U.S. Department of Commerce's National Institute of Standards and Technology
    4. NIST

@article{Cheng_2014, title={Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone}, volume={6}, ISSN={1944-8252}, url={http://dx.doi.org/10.1021/am5032105}, DOI={10.1021/am5032105}, number={15}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Cheng, Lanxia and Qin, Xiaoye and Lucero, Antonio T. and Azcatl, Angelica and Huang, Jie and Wallace, Robert M. and Cho, Kyeongjae and Kim, Jiyoung}, year={2014}, month=jul, pages={11834–11838} }