DOI: 10.1021/am303261c. Improved Growth Behavior of Atomic-Layer-Deposited High-<i>k</i> Dielectrics on Multilayer MoS<sub>2</sub> by Oxygen Plasma Pretreatment

Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

10.1021/am303261c

Crossref journal-article

American Chemical Society (ACS)

ACS Applied Materials & Interfaces (316)

Bibliography

Yang, J., Kim, S., Choi, W., Park, S. H., Jung, Y., Cho, M.-H., & Kim, H. (2013). Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment. ACS Applied Materials & Interfaces, 5(11), 4739â4744.

Authors 7

Jaehyun Yang (first)
Sunkook Kim (additional)
Woong Choi (additional)
Sang Han Park (additional)
Youngkwon Jung (additional)
Mann-Ho Cho (additional)
Hyoungsub Kim (additional)

References 20 Referenced 177

10.1038/nnano.2012.193 / Nat. Nanotechnol. by Wang Q. H. (2012)
10.1126/science.1158877 / Science by Geim A. K. (2009)
10.1038/nnano.2010.89 / Nat. Nanotechnol. by Schwierz F. (2010)
10.1103/PhysRevLett.105.136805 / Phys. Rev. Lett. by Mak K. F. (2010)
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10.1038/nnano.2010.279 / Nat. Nanotechnol. by Radisavljevic B. (2011)
{'issue': '1011', 'key': 'ref7/cit7', 'first-page': '1', 'volume': '3', 'author': 'Kim S. K.', 'year': '2012', 'journal-title': 'Nat. Commun.'} / Nat. Commun. by Kim S. K. (2012)
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10.1103/PhysRevLett.98.136805 / Phys. Rev. Lett. by Jena D. (2007)
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10.1073/pnas.0502848102 / Proc. Natl. Acad. Sci. U.S.A. by Novoselov K. S. (2005)
10.1021/nn1003937 / ACS nano by Lee C. (2010)
10.1063/1.125779 / Appl. Phys. Lett. by Copel M. (2000)
10.1063/1.2764223 / J. Appl. Phys. by Hackley J. C. (2007)
10.1039/c2jm35447k / J. Mater. Chem. by Tai S.-Y. (2012)
10.1016/S0039-6028(00)01101-8 / Surf. Sci. by Gulbinski W. (2001)
10.1002/cphc.201000158 / ChemPhysChem by Riley L. A. (2010)

Dates

Type	When
Created	12 years, 3 months ago (May 20, 2013, 4:08 a.m.)
Deposited	2 years, 4 months ago (April 6, 2023, 8:15 a.m.)
Indexed	4 weeks, 2 days ago (Aug. 2, 2025, 12:48 a.m.)
Issued	12 years, 3 months ago (May 30, 2013)
Published	12 years, 3 months ago (May 30, 2013)
Published Online	12 years, 3 months ago (May 30, 2013)
Published Print	12 years, 2 months ago (June 12, 2013)

Funders 0

None

BibTeX

@article{Yang_2013, title={Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment}, volume={5}, ISSN={1944-8252}, url={http://dx.doi.org/10.1021/am303261c}, DOI={10.1021/am303261c}, number={11}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Yang, Jaehyun and Kim, Sunkook and Choi, Woong and Park, Sang Han and Jung, Youngkwon and Cho, Mann-Ho and Kim, Hyoungsub}, year={2013}, month=may, pages={4739–4744} }

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