DOI: 10.1021/acsnano.9b08986. Low-Power Switching through Disorder and Carrier Localization in Bismuth-Doped Germanium Telluride Phase Change Memory Nanowires [Penn]

Low-Power Switching through Disorder and Carrier Localization in Bismuth-Doped Germanium Telluride Phase Change Memory Nanowires

10.1021/acsnano.9b08986

Crossref journal-article

American Chemical Society (ACS)

ACS Nano (316)

Bibliography

Modi, G., Stach, E. A., & Agarwal, R. (2020). Low-Power Switching through Disorder and Carrier Localization in Bismuth-Doped Germanium Telluride Phase Change Memory Nanowires. ACS Nano, 14(2), 2162â2171.

Authors 3

Gaurav Modi (first)
Eric A. Stach (additional)
Ritesh Agarwal (additional)

References 44 Referenced 20

10.1038/nmat1359
10.1021/cr900040x
10.1038/nmat2009
10.1126/science.1201938
10.1038/nnano.2007.291
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{'key': 'ref36/cit36', 'volume-title': 'Introduction to Dislocations', 'volume': '37', 'author': 'Hull D.', 'year': '2011'} / Introduction to Dislocations by Hull D. (2011)
10.1002/pssb.200301654
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Dates

Type	When
Created	5 years, 7 months ago (Jan. 17, 2020, 1:13 p.m.)
Deposited	2 years, 4 months ago (April 15, 2023, 10:08 p.m.)
Indexed	1 month, 2 weeks ago (July 1, 2025, 4:47 a.m.)
Issued	5 years, 7 months ago (Jan. 17, 2020)
Published	5 years, 7 months ago (Jan. 17, 2020)
Published Online	5 years, 7 months ago (Jan. 17, 2020)
Published Print	5 years, 5 months ago (Feb. 25, 2020)

Funders 2

Office of Naval Research 10.13039/100000006
Region: Americas
gov (National government)
Labels6
1. U.S. Office of Naval Research
2. Naval Research
3. United States Office of Naval Research
4. U.S. Department of the Navy Office of Naval Research
5. The Office of Naval Research
6. ONR
Awards2
1. N00014-16-1-2350
2. N00014-17-1-2661
Division of Materials Research 10.13039/100000078
Region: Americas
gov (National government)
Labels4
1. NSF Division of Materials Research
2. Materials Research
3. DMR
4. MPS/DMR
Awards2
1. DMR-1505127
2. DMR-1720530

BibTeX

@article{Modi_2020, title={Low-Power Switching through Disorder and Carrier Localization in Bismuth-Doped Germanium Telluride Phase Change Memory Nanowires}, volume={14}, ISSN={1936-086X}, url={http://dx.doi.org/10.1021/acsnano.9b08986}, DOI={10.1021/acsnano.9b08986}, number={2}, journal={ACS Nano}, publisher={American Chemical Society (ACS)}, author={Modi, Gaurav and Stach, Eric A. and Agarwal, Ritesh}, year={2020}, month=jan, pages={2162–2171} }

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