DOI: 10.1021/acsami.7b05865. Tunable Mobility in Double-Gated MoTe<sub>2</sub> Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites

10.1021/acsami.7b05865

Crossref journal-article

American Chemical Society (ACS)

ACS Applied Materials & Interfaces (316)

Bibliography

Ji, H., Joo, M.-K., Yi, H., Choi, H., Gul, H. Z., Ghimire, M. K., & Lim, S. C. (2017). Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites. ACS Applied Materials & Interfaces, 9(34), 29185â29192.

Authors 7

Hyunjin Ji (first)
Min-Kyu Joo (additional)
Hojoon Yi (additional)
Homin Choi (additional)
Hamza Zad Gul (additional)
Mohan Kumar Ghimire (additional)
Seong Chu Lim (additional)

References 52 Referenced 39

10.1109/MSPEC.2016.7551335
10.1038/nature11458
10.1038/nature12385
10.1021/nn500064s
10.1039/c3nr03220e
10.1021/acsnano.5b01341
10.1038/nnano.2015.70
10.1038/nnano.2010.172
10.1103/PhysRevLett.98.136805
10.1038/nmat3687
10.1109/LED.2015.2481388
10.1002/adfm.201505346
10.1021/acsnano.5b04611
10.1021/nl4010783
10.1021/nl303583v
10.1063/1.4789365
10.1063/1.4982680
10.1109/TED.2003.811371
10.1080/00207217.2012.743081
10.1021/acsami.6b02085
10.1038/nphys3314
10.1021/jacs.5b07452
10.1021/acs.nanolett.6b01342
10.1002/pssr.201600209
10.1186/s11671-015-0773-y
10.7567/APEX.9.095202
10.1109/TED.2017.2650920
10.1063/1.3432716
10.1049/el:19880369
Mouis, M.; Ghibaudo, G.InNanoscale CMOS;Wiley:Hoboken, NJ, 2013; Chapter 14, pp475–544. (10.1002/9781118621523.ch14)
Haartman, M. V.; Ostling, M.InLow-Frequency Noise in Advanced MOS Devices;Springer:Dordrecht, 2007; Chapter 3, pp53–102. (10.1007/978-1-4020-5910-0_3)
10.1063/1.4871374
10.1002/adma.201502677
10.1039/C3NR04218A
10.1063/1.4932945
10.1063/1.4964467
10.1021/acsami.6b15072
10.1088/2053-1583/3/1/015007
10.1063/1.353777
10.1063/1.3553208
10.1016/j.sse.2005.03.009
10.1016/j.sse.2005.01.005
10.1109/16.877177
10.1016/0038-1101(87)90090-6
10.1016/0038-1101(94)90219-4
10.1016/S0038-1101(00)00119-2
{'key': 'ref47/cit47', 'first-page': '293', 'volume': '7', 'author': 'Ozdag P.', 'year': '2005', 'journal-title': 'J. Optoelectron. Adv. Mater.'} / J. Optoelectron. Adv. Mater. by Ozdag P. (2005)
10.1109/TDMR.2005.845881
10.1080/10420150.2010.487904
10.1021/acs.nanolett.6b02788
10.1109/16.47770
10.1063/1.2433772

Dates

Type	When
Created	8 years ago (Aug. 8, 2017, 11:17 a.m.)
Deposited	2 years, 4 months ago (April 22, 2023, 4:38 a.m.)
Indexed	2 months, 2 weeks ago (June 20, 2025, 2:45 a.m.)
Issued	8 years ago (Aug. 18, 2017)
Published	8 years ago (Aug. 18, 2017)
Published Online	8 years ago (Aug. 18, 2017)
Published Print	8 years ago (Aug. 30, 2017)

Funders 1

National Research Foundation of Korea 10.13039/501100003725
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels3
1. 한국연구재단이 창의적 연구와
2. National Research Foundation (South Korea)
3. NRF
Awards1
1. NRF-2016R1A6A3A11932989

BibTeX

@article{Ji_2017, title={Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites}, volume={9}, ISSN={1944-8252}, url={http://dx.doi.org/10.1021/acsami.7b05865}, DOI={10.1021/acsami.7b05865}, number={34}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Ji, Hyunjin and Joo, Min-Kyu and Yi, Hojoon and Choi, Homin and Gul, Hamza Zad and Ghimire, Mohan Kumar and Lim, Seong Chu}, year={2017}, month=aug, pages={29185–29192} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        20
      ]
    ],
    "date-time": "2025-06-20T06:45:50Z",
    "timestamp": 1750401950563,
    "version": "3.37.3"
  },
  "reference-count": 52,
  "publisher": "American Chemical Society (ACS)",
  "issue": "34",
  "funder": [
    {
      "DOI": "10.13039/501100003725",
      "name": "National Research Foundation of Korea",
      "doi-asserted-by": "publisher",
      "award": [
        "NRF-2016R1A6A3A11932989"
      ],
      "id": [
        {
          "id": "10.13039/501100003725",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2017,
        8,
        30
      ]
    ]
  },
  "DOI": "10.1021/acsami.7b05865",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2017,
        8,
        8
      ]
    ],
    "date-time": "2017-08-08T15:17:22Z",
    "timestamp": 1502205442000
  },
  "page": "29185-29192",
  "source": "Crossref",
  "is-referenced-by-count": 39,
  "title": "Tunable Mobility in Double-Gated MoTe<sub>2</sub> Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites",
  "prefix": "10.1021",
  "volume": "9",
  "author": [
    {
      "given": "Hyunjin",
      "family": "Ji",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "given": "Min-Kyu",
      "family": "Joo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "given": "Hojoon",
      "family": "Yi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        },
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "given": "Homin",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        },
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "given": "Hamza Zad",
      "family": "Gul",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        },
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "given": "Mohan Kumar",
      "family": "Ghimire",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        },
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0002-0751-1458",
      "authenticated-orcid": true,
      "given": "Seong Chu",
      "family": "Lim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Energy\rScience, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea"
        },
        {
          "name": "Center for Integrated Nanostructure\rPhysics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea"
        }
      ]
    }
  ],
  "member": "316",
  "published-online": {
    "date-parts": [
      [
        2017,
        8,
        18
      ]
    ]
  },
  "reference": [
    {
      "doi-asserted-by": "publisher",
      "key": "ref1/cit1",
      "DOI": "10.1109/MSPEC.2016.7551335"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref2/cit2",
      "DOI": "10.1038/nature11458"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref3/cit3",
      "DOI": "10.1038/nature12385"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref4/cit4",
      "DOI": "10.1021/nn500064s"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref5/cit5",
      "DOI": "10.1039/c3nr03220e"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref6/cit6",
      "DOI": "10.1021/acsnano.5b01341"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref7/cit7",
      "DOI": "10.1038/nnano.2015.70"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref8/cit8",
      "DOI": "10.1038/nnano.2010.172"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref9/cit9",
      "DOI": "10.1103/PhysRevLett.98.136805"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref10/cit10",
      "DOI": "10.1038/nmat3687"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref11/cit11",
      "DOI": "10.1109/LED.2015.2481388"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref12/cit12",
      "DOI": "10.1002/adfm.201505346"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref13/cit13",
      "DOI": "10.1021/acsnano.5b04611"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref14/cit14",
      "DOI": "10.1021/nl4010783"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref15/cit15",
      "DOI": "10.1021/nl303583v"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref16/cit16",
      "DOI": "10.1063/1.4789365"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref17/cit17",
      "DOI": "10.1063/1.4982680"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref18/cit18",
      "DOI": "10.1109/TED.2003.811371"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref19/cit19",
      "DOI": "10.1080/00207217.2012.743081"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref20/cit20",
      "DOI": "10.1021/acsami.6b02085"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref21/cit21",
      "DOI": "10.1038/nphys3314"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref22/cit22",
      "DOI": "10.1021/jacs.5b07452"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref23/cit23",
      "DOI": "10.1021/acs.nanolett.6b01342"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref24/cit24",
      "DOI": "10.1002/pssr.201600209"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref25/cit25",
      "DOI": "10.1186/s11671-015-0773-y"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref26/cit26",
      "DOI": "10.7567/APEX.9.095202"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref27/cit27",
      "DOI": "10.1109/TED.2017.2650920"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref28/cit28",
      "DOI": "10.1063/1.3432716"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref29/cit29",
      "DOI": "10.1049/el:19880369"
    },
    {
      "doi-asserted-by": "crossref",
      "unstructured": "Mouis, M.; Ghibaudo, G.InNanoscale CMOS;Wiley:Hoboken, NJ, 2013; Chapter 14, pp475\u2013544.",
      "key": "ref30/cit30",
      "DOI": "10.1002/9781118621523.ch14"
    },
    {
      "doi-asserted-by": "crossref",
      "unstructured": "Haartman, M. V.; Ostling, M.InLow-Frequency Noise in Advanced MOS Devices;Springer:Dordrecht, 2007; Chapter 3, pp53\u2013102.",
      "key": "ref31/cit31",
      "DOI": "10.1007/978-1-4020-5910-0_3"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref32/cit32",
      "DOI": "10.1063/1.4871374"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref33/cit33",
      "DOI": "10.1002/adma.201502677"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref34/cit34",
      "DOI": "10.1039/C3NR04218A"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref35/cit35",
      "DOI": "10.1063/1.4932945"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref36/cit36",
      "DOI": "10.1063/1.4964467"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref37/cit37",
      "DOI": "10.1021/acsami.6b15072"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref38/cit38",
      "DOI": "10.1088/2053-1583/3/1/015007"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref39/cit39",
      "DOI": "10.1063/1.353777"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref40/cit40",
      "DOI": "10.1063/1.3553208"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref41/cit41",
      "DOI": "10.1016/j.sse.2005.03.009"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref42/cit42",
      "DOI": "10.1016/j.sse.2005.01.005"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref43/cit43",
      "DOI": "10.1109/16.877177"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref44/cit44",
      "DOI": "10.1016/0038-1101(87)90090-6"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref45/cit45",
      "DOI": "10.1016/0038-1101(94)90219-4"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref46/cit46",
      "DOI": "10.1016/S0038-1101(00)00119-2"
    },
    {
      "key": "ref47/cit47",
      "first-page": "293",
      "volume": "7",
      "author": "Ozdag P.",
      "year": "2005",
      "journal-title": "J. Optoelectron. Adv. Mater."
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref48/cit48",
      "DOI": "10.1109/TDMR.2005.845881"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref49/cit49",
      "DOI": "10.1080/10420150.2010.487904"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref50/cit50",
      "DOI": "10.1021/acs.nanolett.6b02788"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref51/cit51",
      "DOI": "10.1109/16.47770"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "ref52/cit52",
      "DOI": "10.1063/1.2433772"
    }
  ],
  "container-title": "ACS Applied Materials &amp; Interfaces",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.acs.org/doi/pdf/10.1021/acsami.7b05865",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        4,
        22
      ]
    ],
    "date-time": "2023-04-22T08:38:17Z",
    "timestamp": 1682152697000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.acs.org/doi/10.1021/acsami.7b05865"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2017,
        8,
        18
      ]
    ]
  },
  "references-count": 52,
  "journal-issue": {
    "issue": "34",
    "published-print": {
      "date-parts": [
        [
          2017,
          8,
          30
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1021/acsami.7b05865"
  ],
  "URL": "http://dx.doi.org/10.1021/acsami.7b05865",
  "relation": {},
  "ISSN": [
    "1944-8244",
    "1944-8252"
  ],
  "subject": [],
  "container-title-short": "ACS Appl. Mater. Interfaces",
  "published": {
    "date-parts": [
      [
        2017,
        8,
        18
      ]
    ]
  }
}