DOI: 10.1021/acsami.5b07746. Impact of Dopant Compensation on Graded <i>p</i>

Impact of Dopant Compensation on Graded p–n Junctions in Si Nanowires

10.1021/acsami.5b07746

Crossref journal-article

American Chemical Society (ACS)

ACS Applied Materials & Interfaces (316)

Bibliography

Amit, I., Jeon, N., Lauhon, L. J., & Rosenwaks, Y. (2015). Impact of Dopant Compensation on Graded pân Junctions in Si Nanowires. ACS Applied Materials & Interfaces, 8(1), 128â134.

Authors 4

Iddo Amit (first)
Nari Jeon (additional)
Lincoln J. Lauhon (additional)
Yossi Rosenwaks (additional)

References 30 Referenced 8

Dates

Type	When
Created	9 years, 8 months ago (Dec. 9, 2015, 3:03 p.m.)
Deposited	2 years, 4 months ago (April 14, 2023, 3:17 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 10:54 a.m.)
Issued	9 years, 8 months ago (Dec. 22, 2015)
Published	9 years, 8 months ago (Dec. 22, 2015)
Published Online	9 years, 8 months ago (Dec. 22, 2015)
Published Print	9 years, 7 months ago (Jan. 13, 2016)

Funders 2

United States-Israel Binational Science Foundation 10.13039/501100001742
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels2
1. U.S-Israel Binational Science Foundation
2. BSF
Awards1
1. 2012088
Division of Materials Research 10.13039/100000078
Region: Americas
gov (National government)
Labels4
1. NSF Division of Materials Research
2. Materials Research
3. DMR
4. MPS/DMR
Awards1
1. 1308654

BibTeX

@article{Amit_2015, title={Impact of Dopant Compensation on Graded p–n Junctions in Si Nanowires}, volume={8}, ISSN={1944-8252}, url={http://dx.doi.org/10.1021/acsami.5b07746}, DOI={10.1021/acsami.5b07746}, number={1}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Amit, Iddo and Jeon, Nari and Lauhon, Lincoln J. and Rosenwaks, Yossi}, year={2015}, month=dec, pages={128–134} }

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