DOI: 10.1021/acs.nanolett.8b02688. Molecular-Beam Epitaxy of Two-Dimensional In<sub>2</sub>Se<sub>3</sub> and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

10.1021/acs.nanolett.8b02688

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Poh, S. M., Tan, S. J. R., Wang, H., Song, P., Abidi, I. H., Zhao, X., Dan, J., Chen, J., Luo, Z., Pennycook, S. J., Castro Neto, A. H., & Loh, K. P. (2018). Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction. Nano Letters, 18(10), 6340â6346.

Authors 12

Sock Mui Poh (first)
Sherman Jun Rong Tan (additional)
Han Wang (additional)
Peng Song (additional)
Irfan H. Abidi (additional)
Xiaoxu Zhao (additional)
Jiadong Dan (additional)
Jingsheng Chen (additional)
Zhengtang Luo (additional)
Stephen J. Pennycook (additional)
Antonio H. Castro Neto (additional)
Kian Ping Loh (additional)

References 58 Referenced 200

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Dates

Type	When
Created	6 years, 11 months ago (Sept. 7, 2018, 5:01 p.m.)
Deposited	2 years, 3 months ago (April 22, 2023, 3:55 p.m.)
Indexed	5 minutes ago (Aug. 21, 2025, 8:54 a.m.)
Issued	6 years, 11 months ago (Sept. 7, 2018)
Published	6 years, 11 months ago (Sept. 7, 2018)
Published Online	6 years, 11 months ago (Sept. 7, 2018)
Published Print	6 years, 10 months ago (Oct. 10, 2018)

Funders 1

National Research Foundation Singapore 10.13039/501100001381
Region: Asia
gov (National government)
Labels8
1. National Research Foundation-Prime Minister's office, Republic of Singapore
2. Singapore National Research Foundation
3. National Research Foundation of Singapore
4. National Research Foundation, Singapore
5. National Research Foundation, Singapore (NRF)
6. nrfsg
7. NRF Singapore
8. NRF

BibTeX

@article{Poh_2018, title={Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction}, volume={18}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/acs.nanolett.8b02688}, DOI={10.1021/acs.nanolett.8b02688}, number={10}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Poh, Sock Mui and Tan, Sherman Jun Rong and Wang, Han and Song, Peng and Abidi, Irfan H. and Zhao, Xiaoxu and Dan, Jiadong and Chen, Jingsheng and Luo, Zhengtang and Pennycook, Stephen J. and Castro Neto, Antonio H. and Loh, Kian Ping}, year={2018}, month=sep, pages={6340–6346} }

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