DOI: 10.1021/acs.nanolett.7b01584. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS<sub>2</sub> Transistors

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

10.1021/acs.nanolett.7b01584

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

McGuire, F. A., Lin, Y.-C., Price, K., Rayner, G. B., Khandelwal, S., Salahuddin, S., & Franklin, A. D. (2017). Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors. Nano Letters, 17(8), 4801â4806.

Authors 7

Felicia A. McGuire (first)
Yuh-Chen Lin (additional)
Katherine Price (additional)
G. Bruce Rayner (additional)
Sourabh Khandelwal (additional)
Sayeef Salahuddin (additional)
Aaron D. Franklin (additional)

References 40 Referenced 275

Dates

Type	When
Created	8 years, 1 month ago (July 10, 2017, 11:24 a.m.)
Deposited	2 years, 4 months ago (April 24, 2023, 12:23 a.m.)
Indexed	2 weeks ago (Aug. 23, 2025, 9:19 p.m.)
Issued	8 years, 1 month ago (July 12, 2017)
Published	8 years, 1 month ago (July 12, 2017)
Published Online	8 years, 1 month ago (July 12, 2017)
Published Print	8 years ago (Aug. 9, 2017)

Funders 2

Division of Graduate Education 10.13039/100000082
Region: Americas
gov (National government)
Labels5
1. NSF Division of Graduate Education
2. Graduate Education
3. EDU/DGE
4. EHR/DGE
5. DGE
Awards1
1. DGE-1106401
Division of Electrical, Communications and Cyber Systems 10.13039/100000148
Region: Americas
gov (National government)
Labels8
1. Electrical, Communications and Cyber Systems
2. NSF Division of Electrical, Communications and Cyber Systems
3. ECCS Division
4. Division of Electrical, Communications & Cyber Systems
5. NSF Division of Electrical, Communications & Cyber Systems
6. Engineering Division of Electrical, Communications & Cyber Systems
7. ECCS
8. ENG/ECCS
Awards1
1. ECCS-1656240

BibTeX

@article{McGuire_2017, title={Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors}, volume={17}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/acs.nanolett.7b01584}, DOI={10.1021/acs.nanolett.7b01584}, number={8}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={McGuire, Felicia A. and Lin, Yuh-Chen and Price, Katherine and Rayner, G. Bruce and Khandelwal, Sourabh and Salahuddin, Sayeef and Franklin, Aaron D.}, year={2017}, month=jul, pages={4801–4806} }

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