DOI: 10.1021/acs.nanolett.6b02905. Thermally Assisted Nonvolatile Memory in Monolayer MoS<sub>2</sub> Transistors

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors

10.1021/acs.nanolett.6b02905

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

He, G., Ramamoorthy, H., Kwan, C.-P., Lee, Y.-H., Nathawat, J., Somphonsane, R., Matsunaga, M., Higuchi, A., Yamanaka, T., Aoki, N., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., & Bird, J. P. (2016). Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors. Nano Letters, 16(10), 6445â6451.

Authors 15

G. He (first)
H. Ramamoorthy (additional)
C.-P. Kwan (additional)
Y.-H. Lee (additional)
J. Nathawat (additional)
R. Somphonsane (additional)
M. Matsunaga (additional)
A. Higuchi (additional)
T. Yamanaka (additional)
N. Aoki (additional)
Y. Gong (additional)
X. Zhang (additional)
R. Vajtai (additional)
P. M. Ajayan (additional)
J. P. Bird (additional)

References 36 Referenced 54

10.1007/978-1-4899-7537-9 / Emerging Non-Volatile Memories by Hong S. (2014)
10.1038/nphoton.2009.40
10.1038/nmat2009
10.1038/nnano.2012.240
{'volume-title': 'Handbook of Spintronics', 'year': '2016', 'author': 'Bandiera S.', 'key': 'ref5/cit5'} / Handbook of Spintronics by Bandiera S. (2016)
10.1038/nnano.2012.193
10.1063/1.3532849
10.1021/nl8033637
10.1021/nl903162a
10.1063/1.3460798
10.1021/nn101950n
10.1063/1.3588033
10.1021/nn301572c
10.1063/1.3696045
10.1063/1.4894865
10.1063/1.4914968
10.1063/1.4942406
10.1021/nn402348r
10.1021/nn202852j
10.1021/nn3059136
10.1038/ncomms2652
10.1021/nn501181t
10.1038/nnano.2015.56
10.1063/1.4804546
10.1021/acs.nanolett.5b01159
10.1063/1.3596441
10.1063/1.4906496
10.1063/1.347042
10.1109/5.622505
10.1109/JPROC.2003.811702
10.1002/adma.201203731
10.1002/pssr.201307015
10.1063/1.4801844
10.1038/nnano.2013.219
10.1038/nnano.2014.150
10.1038/nnano.2015.70

Dates

Type	When
Created	8 years, 10 months ago (Sept. 26, 2016, 11:21 a.m.)
Deposited	2 years, 4 months ago (April 17, 2023, 2:26 p.m.)
Indexed	2 months ago (June 22, 2025, 3:02 p.m.)
Issued	8 years, 10 months ago (Sept. 28, 2016)
Published	8 years, 10 months ago (Sept. 28, 2016)
Published Online	8 years, 10 months ago (Sept. 28, 2016)
Published Print	8 years, 10 months ago (Oct. 12, 2016)

Funders 3

Thailand Research Fund 10.13039/501100004396
Region: Asia
gov (Local government)
Labels1
1. TRF
Awards1
1. TRG5880012
Japan Society for the Promotion of Science 10.13039/501100001691
Region: Asia
gov (National government)
Labels6
1. KAKENHI
2. 日本学術振興会
3. Gakushin
4. JSPS KAKEN
5. JSPS Grants-in-Aid for Scientific Research
6. JSPS
Awards1
1. JP16H00899
Office of Science 10.13039/100006132
Region: Americas
gov (National government)
Labels8
1. U.S. DOE Office of Science
2. DOE Office of Science
3. DOE's Office of Science
4. Department of Energy's (DOE's) Office of Science
5. The DOE Office of Science
6. U.S. Department of Energy Office of Science
7. U.S. Dept. of Energy Office of Science
8. SC
Awards1
1. DE-FG02-04ER46180

BibTeX

@article{He_2016, title={Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors}, volume={16}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/acs.nanolett.6b02905}, DOI={10.1021/acs.nanolett.6b02905}, number={10}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={He, G. and Ramamoorthy, H. and Kwan, C.-P. and Lee, Y.-H. and Nathawat, J. and Somphonsane, R. and Matsunaga, M. and Higuchi, A. and Yamanaka, T. and Aoki, N. and Gong, Y. and Zhang, X. and Vajtai, R. and Ajayan, P. M. and Bird, J. P.}, year={2016}, month=sep, pages={6445–6451} }

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