DOI: 10.1021/acs.nanolett.6b01443. Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect

Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect

10.1021/acs.nanolett.6b01443

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Aradhya, S. V., Rowlands, G. E., Oh, J., Ralph, D. C., & Buhrman, R. A. (2016). Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect. Nano Letters, 16(10), 5987â5992.

Authors 5

S. V. Aradhya (first)
G. E. Rowlands (additional)
J. Oh (additional)
D. C. Ralph (additional)
R. A. Buhrman (additional)

References 28 Referenced 137

10.1038/nnano.2015.24
10.1038/nmat3311
10.1038/nmat2024
10.1109/TMAG.2010.2043069
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10.1103/PhysRevB.83.054430
10.1063/1.3527962
10.1038/nature10309
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10.1038/nature13534
10.1038/nmat3973
10.1109/LMAG.2015.2455954
10.1126/science.1218197
10.1063/1.4753947
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10.1063/1.4808033
10.1063/1.4863407
10.1016/0375-9601(71)90196-4
10.1103/PhysRevLett.83.1834
10.1103/PhysRevB.62.570
10.1103/PhysRevLett.92.088302
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Dmytro, C.High Frequency Behaviour of Magnetic Thin Film Elements for Microelectronics. Ph.D. Thesis, TU Dresden, Dresden, Germany, 2006.
10.1063/1.3561753
10.1063/1.4902443

Dates

Type	When
Created	9 years, 2 months ago (June 22, 2016, 3:08 p.m.)
Deposited	2 years, 4 months ago (April 17, 2023, 2:23 p.m.)
Indexed	3 weeks, 5 days ago (Aug. 6, 2025, 8:16 a.m.)
Issued	9 years, 2 months ago (June 27, 2016)
Published	9 years, 2 months ago (June 27, 2016)
Published Online	9 years, 2 months ago (June 27, 2016)
Published Print	8 years, 10 months ago (Oct. 12, 2016)

Funders 3

Army Research Office 10.13039/100000183
Region: Americas
gov (National government)
Labels5
1. U.S. Army Research Office
2. United States Army Research Office
3. U.S. Army Research Laboratory's Army Research Office
4. ARL's Army Research Office
5. ARO
Awards1
1. W911NF-14-C-0089
Division of Electrical, Communications and Cyber Systems 10.13039/100000148
Region: Americas
gov (National government)
Labels8
1. Electrical, Communications and Cyber Systems
2. NSF Division of Electrical, Communications and Cyber Systems
3. ECCS Division
4. Division of Electrical, Communications & Cyber Systems
5. NSF Division of Electrical, Communications & Cyber Systems
6. Engineering Division of Electrical, Communications & Cyber Systems
7. ECCS
8. ENG/ECCS
Awards1
1. ECCS-1542081
Division of Materials Research 10.13039/100000078
Region: Americas
gov (National government)
Labels4
1. NSF Division of Materials Research
2. Materials Research
3. DMR
4. MPS/DMR
Awards1
1. DMR-1120296

BibTeX

@article{Aradhya_2016, title={Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect}, volume={16}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/acs.nanolett.6b01443}, DOI={10.1021/acs.nanolett.6b01443}, number={10}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Aradhya, S. V. and Rowlands, G. E. and Oh, J. and Ralph, D. C. and Buhrman, R. A.}, year={2016}, month=jun, pages={5987–5992} }

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