DOI: 10.1021/acs.nanolett.5b03218. Electrically Tunable Bandgaps in Bilayer MoS<sub>2</sub>

Electrically Tunable Bandgaps in Bilayer MoS2

10.1021/acs.nanolett.5b03218

Crossref journal-article

American Chemical Society (ACS)

Nano Letters (316)

Bibliography

Chu, T., Ilatikhameneh, H., Klimeck, G., Rahman, R., & Chen, Z. (2015). Electrically Tunable Bandgaps in Bilayer MoS2. Nano Letters, 15(12), 8000â8007.

Authors 5

Tao Chu (first)
Hesameddin Ilatikhameneh (additional)
Gerhard Klimeck (additional)
Rajib Rahman (additional)
Zhihong Chen (additional)

References 33 Referenced 187

10.1093/oso/9780198506454.001.0001 / Band Theory and Electronic Properties of Solid by Singleton J. (2001)
Kelly, M. J.InLow-Dimensional Semiconductor Structures;Clarendon Press:Oxford, 1995; pp17–19.
10.1051/jphyscol:1984501
10.1016/0039-6028(94)90704-8
10.1126/science.1102896
10.1038/nnano.2010.279
10.1103/PhysRevLett.105.136805
10.1038/nmat2082
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10.1038/nature08105
10.1103/PhysRevB.78.235408
10.1021/nl9039636
10.1103/PhysRevLett.105.166601
10.1007/s12274-015-0823-x
10.1103/PhysRevB.75.155115
10.1103/PhysRevB.74.161403
10.1103/PhysRevLett.99.216802
10.1080/00018736900101307
10.1103/PhysRevB.64.235305
10.1103/PhysRevB.84.205325
10.1021/nl903868w
10.1002/adfm.201102111
10.1038/srep07293
10.1021/nl2021575
10.1103/PhysRevB.86.115409
10.1103/PhysRevB.85.205302
10.1038/nmat3505
10.1021/nl501638a
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Dates

Type	When
Created	9 years, 9 months ago (Nov. 11, 2015, 11:38 a.m.)
Deposited	1 year, 2 months ago (June 12, 2024, 7:29 a.m.)
Indexed	3 weeks, 2 days ago (Aug. 2, 2025, 12:34 a.m.)
Issued	9 years, 9 months ago (Nov. 13, 2015)
Published	9 years, 9 months ago (Nov. 13, 2015)
Published Online	9 years, 9 months ago (Nov. 13, 2015)
Published Print	9 years, 8 months ago (Dec. 9, 2015)

Funders 3

Defense Advanced Research Projects Agency 10.13039/100000185
Region: Americas
gov (National government)
Labels6
1. U.S. Defense Advanced Research Projects Agency
2. United States Defense Advanced Research Projects Agency
3. The Defense Advanced Research Projects Agency
4. Advanced Research Projects Agency
5. DARPA
6. ARPA
Microelectronics Advanced Research Corporation 10.13039/100007245
Region: Americas
pri (For-profit companies (industry))
Labels1
1. MARCO
Division of Materials Research 10.13039/100000078
Region: Americas
gov (National government)
Labels4
1. NSF Division of Materials Research
2. Materials Research
3. DMR
4. MPS/DMR
Awards1
1. DMR-1206200

BibTeX

@article{Chu_2015, title={Electrically Tunable Bandgaps in Bilayer MoS2}, volume={15}, ISSN={1530-6992}, url={http://dx.doi.org/10.1021/acs.nanolett.5b03218}, DOI={10.1021/acs.nanolett.5b03218}, number={12}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Chu, Tao and Ilatikhameneh, Hesameddin and Klimeck, Gerhard and Rahman, Rajib and Chen, Zhihong}, year={2015}, month=nov, pages={8000–8007} }

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