DOI: 10.1021/acs.jpclett.9b03433. Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties

Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties

10.1021/acs.jpclett.9b03433

Crossref journal-article

American Chemical Society (ACS)

The Journal of Physical Chemistry Letters (316)

Bibliography

Zhang, T., Ma, Y., Xu, X., Lei, C., Huang, B., & Dai, Y. (2019). Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties. The Journal of Physical Chemistry Letters, 11(2), 497â503.

Authors 6

Ting Zhang (first)
Yandong Ma (additional)
Xilong Xu (additional)
Chengan Lei (additional)
Baibiao Huang (additional)
Ying Dai (additional)

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Dates

Type	When
Created	5 years, 7 months ago (Dec. 29, 2019, 10:10 a.m.)
Deposited	2 years, 3 months ago (April 22, 2023, 5:38 p.m.)
Indexed	2 months, 3 weeks ago (May 27, 2025, 7:26 a.m.)
Issued	5 years, 7 months ago (Dec. 29, 2019)
Published	5 years, 7 months ago (Dec. 29, 2019)
Published Online	5 years, 7 months ago (Dec. 29, 2019)
Published Print	5 years, 7 months ago (Jan. 16, 2020)

Funders 0

None

BibTeX

@article{Zhang_2019, title={Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties}, volume={11}, ISSN={1948-7185}, url={http://dx.doi.org/10.1021/acs.jpclett.9b03433}, DOI={10.1021/acs.jpclett.9b03433}, number={2}, journal={The Journal of Physical Chemistry Letters}, publisher={American Chemical Society (ACS)}, author={Zhang, Ting and Ma, Yandong and Xu, Xilong and Lei, Chengan and Huang, Baibiao and Dai, Ying}, year={2019}, month=dec, pages={497–503} }

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