Crossref journal-article
American Chemical Society (ACS)
Chemistry of Materials (316)
Bibliography

Choi, Y., Kim, H., Yang, J., Shin, S. W., Um, S. H., Lee, S., Kang, M. S., & Cho, J. H. (2018). Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V–1 s–1. Chemistry of Materials, 30(14), 4527–4535.

Dates
Type When
Created 7 years, 2 months ago (June 19, 2018, 4:24 p.m.)
Deposited 2 years, 4 months ago (April 27, 2023, 6:38 a.m.)
Indexed 3 months, 2 weeks ago (May 22, 2025, 3:50 a.m.)
Issued 7 years, 2 months ago (June 19, 2018)
Published 7 years, 2 months ago (June 19, 2018)
Published Online 7 years, 2 months ago (June 19, 2018)
Published Print 7 years, 1 month ago (July 24, 2018)
Funders 1
  1. National Research Foundation of Korea 10.13039/501100003725

    Region: Asia

    pri (Trusts, charities, foundations (both public and private))

    Labels3
    1. 한국연구재단이 창의적 연구와
    2. National Research Foundation (South Korea)
    3. NRF
    Awards3
    1. NRF-2013M3A6A5073177
    2. NRF-2017R1A2B2005790
    3. NRF-2017R1A4A1015400

@article{Choi_2018, title={Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V–1 s–1}, volume={30}, ISSN={1520-5002}, url={http://dx.doi.org/10.1021/acs.chemmater.8b00568}, DOI={10.1021/acs.chemmater.8b00568}, number={14}, journal={Chemistry of Materials}, publisher={American Chemical Society (ACS)}, author={Choi, Yongsuk and Kim, Hyunwoo and Yang, Jeehye and Shin, Seung Won and Um, Soong Ho and Lee, Sungjoo and Kang, Moon Sung and Cho, Jeong Ho}, year={2018}, month=jun, pages={4527–4535} }