DOI: 10.1017/s1431927607070894. Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures

Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures

10.1017/s1431927607070894

Crossref journal-article

Oxford University Press (OUP)

Microscopy and Microanalysis (286)

Abstract

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III–V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III–V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

Bibliography

Gorman, B. P., Norman, A. G., & Yan, Y. (2007). Atom Probe Analysis of IIIâV and Si-Based Semiconductor Photovoltaic Structures. Microscopy and Microanalysis, 13(6), 493â502.

Authors 3

Brian P. Gorman (first)
Andrew G. Norman (additional)
Yanfa Yan (additional)

References 36 Referenced 44

10.1007/978-1-4757-2519-3
Bhattacharya, R.N. , Contreras, M.A. & Teeter, G. (2004).18.5% copper indium gallium diselenide (CIGS) device using single-layer, chemical-bath-deposited ZnS(O,OH).Jap J Appl Phys 43,L1475–L1476.
10.1007/978-1-4615-4281-0
Lewis, N.S. , Ed.(2003).Basic Research Needs for Solar Energy Utilization.Report on DOE-BES Workshop on Solar Energy Utilization. Available at: http://www.er.doe.gov/bes/reports/files/SEU_rpt.pdf.
Bhattacharya, P. (1997).Semiconductor Optoelectronic Devices,2nd ed. New York:Prentice-Hall.
10.1146/annurev.matsci.37.052506.084239
Thompson, K. , Sebastian, J. & Gerstl, S. (2007b).Observations of Si field evaporation.Ultramicroscopy 107,124–130. (10.1016/j.ultramic.2006.06.007)
Kellogg, G.L. & Tsong, T.T. (1980).Pulsed laser atom probe field ion microscope.J Appl Phys 51,1184.
10.1017/S1431927605502010
10.1017/S143192760404019X
10.1017/S1431927604040565
10.1016/j.ultramic.2004.10.011
10.1111/j.1365-2818.1986.tb02712.x
10.1103/PhysRevLett.78.5014
10.1051/jphyscol:1988686
Thompson, K. , Larson, D.J. & Ulfig, R.M. (2006).Analyzing Si-based structures in 3-D using a laser pulsed local electrode atom probe.Solid State Technol 49,65.
10.1063/1.2194089
10.1016/0304-3991(95)00086-0
10.1063/1.1354466
Boeing Spectrolab .Boeing Spectrolab terrestrial solar cell surpasses 40 percent efficiency. Available at: http://www.spectrolab.com/com/news/news-detail.asp?id=172(accessed Dec. 2006).
Benninghoven, A. , Evans, C.A. , McKeegan, K.D. , Storms, H.A. & Werner, H.W. (1990).Secondary Ion Mass Spectrometry.New York:John Wiley.
10.1021/nl0502672
10.1063/1.2189670
10.1109/PVSC.2005.1488125
Wang, T.H. , Page, M.R. , Iwaniczko, E. , Wang, Q. , Xu, Y. , Yan, Y. , Roybal, L. , Levi, D. , Bauer, R. , Branz, H.M. , Yelundur, V. & Rohatgi, A. (2005).17.5% p-type silicon heterojunction solar cells with HWCVD a-Si:H as the emitter and back contact.Report No. CP-520-38942.Golden, CO:National Renewable Energy Laboratory.
10.1063/1.2370501
Grovenor, C.R.M. , Cerezo, A. , Liddle, J.A. & Smith, G.D.W. (1987).Pulsed laser atom probe analysis of semiconductor materials. InMicroscopy of Semiconducting Materials, Proceedings of the Institute of Physics Conference, Cullis, A.G. & Augustus, P.D. (Eds.), p.665.New York:American Institute of Physics.
10.1017/CBO9780511565007
10.1016/S0304-3991(98)00058-8
Thompson, K. , Lawrence, D. , Larson, D.J. , Olson, J.D. , Kelly, T.F. & Gorman, B.P. (2007a).In-situ site specific specimen preparation for atom probe tomography.Ultramicroscopy 107,131–139. (10.1016/j.ultramic.2006.06.008)
10.1017/S1431927604040577
10.1063/1.1138604
10.1016/0169-4332(91)90164-F
10.1109/PVSC.2005.1488065
10.1103/PhysRevLett.92.186601
10.1063/1.2005368

Dates

Type	When
Created	17 years, 9 months ago (Nov. 15, 2007, 7:37 a.m.)
Deposited	2 years, 6 months ago (Feb. 14, 2023, 3:39 p.m.)
Indexed	1 year, 3 months ago (May 14, 2024, 9:19 p.m.)
Issued	17 years, 9 months ago (Nov. 14, 2007)
Published	17 years, 9 months ago (Nov. 14, 2007)
Published Online	17 years, 9 months ago (Nov. 14, 2007)
Published Print	17 years, 8 months ago (Dec. 1, 2007)

Funders 0

None

BibTeX

@article{Gorman_2007, title={Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures}, volume={13}, ISSN={1435-8115}, url={http://dx.doi.org/10.1017/s1431927607070894}, DOI={10.1017/s1431927607070894}, number={6}, journal={Microscopy and Microanalysis}, publisher={Oxford University Press (OUP)}, author={Gorman, Brian P. and Norman, Andrew G. and Yan, Yanfa}, year={2007}, month=nov, pages={493–502} }

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