DOI: 10.1017/s1431927600023369. Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes

Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes

10.1017/s1431927600023369

Crossref journal-article

Oxford University Press (OUP)

Microscopy and Microanalysis (286)

Abstract

Abstract The ability to map semiconductor doping distributions with high spatial resolution (∽10 nm) and high compositional sensitivity (of order 1 ppm) is of enormous importance to the microelectronics and optoelectronics industry. Although several methods (e.g. scanning capacitance microscopy, masked secondary ion mass spectroscopy, secondary electron microscopy, electron holography) are under development, no technique currently offers the combination of sufficient resolution, sensitivity and reproducibility to fully address characterization requirements. In this paper, we describe development of a technique which utilizes focused ion beam (FIB) sputtering and transmission electron microscopy (TEM) to enable direct imaging of dopant distributions in InP-based semiconductor devices, with spatial resolution of order 10 - 30 ran, and compositional sensitivity of order 1017 cm-3 (i.e. 5 ppm). Laser diode samples are prepared for TEM imaging using a FEI 200 30 kV Ga+ focused ion beam system. A schematic of the relevant structure is shown in Figure 1(a).

Bibliography

Hull, R. (1998). Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes. Microscopy and Microanalysis, 4(S2), 648â649.

Authors 1

R Hull (first)

References 5 Referenced 3

Samples provided by AT&T Bell Laboratories (Now: Bell Laboratories, Lucent Technologies).
See other relevant papers by Lang, D.V. , McCartney, M. , and Venables, D. in these proceedings.
10.1063/1.114206
10.1063/1.109032
{'volume-title': 'MSc Thesis', 'year': '1996', 'author': 'Moore', 'key': 'S1431927600023369_ref005'} / MSc Thesis by Moore (1996)

Dates

Type	When
Created	5 years, 1 month ago (July 6, 2020, 1:33 a.m.)
Deposited	11 months, 1 week ago (Sept. 9, 2024, 1:14 p.m.)
Indexed	11 months, 1 week ago (Sept. 9, 2024, 8:07 p.m.)
Issued	27 years, 1 month ago (July 1, 1998)
Published	27 years, 1 month ago (July 1, 1998)
Published Online	27 years, 1 month ago (July 1, 1998)
Published Print	27 years, 1 month ago (July 1, 1998)

Funders 0

None

BibTeX

@article{Hull_1998, title={Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes}, volume={4}, ISSN={1431-9276}, url={http://dx.doi.org/10.1017/s1431927600023369}, DOI={10.1017/s1431927600023369}, number={S2}, journal={Microscopy and Microanalysis}, publisher={Oxford University Press (OUP)}, author={Hull, R}, year={1998}, month=jul, pages={648–649} }

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