Abstract
Holes 20 Å in diameter and fine lines 20 Å wide can be cut in the metal-β-aluminas using the 10 Å electron beam of the Vacuum Generators, HB5 scanning transmission electron microscope. The minimum current density required for cutting was 103 amp/cm2. Electron energies of 40,60,80,100 keV were used.This technique has higher resolution than current lithography methods and is direct, requiring no chemical development. The width of isolated lines made on solid substrates is currently about .1μm (Ahmed and McMahon, 1981) and .03μm (Jackel et al., 1980). M. Isaacson and A. Murry have carried out electron beam writing on NaCl crystals supported on a carbon film on the scale we report here.In our case uniform 20Å holes and lines can be cut through self-supporting 1000A thick slabs of sodium-β-alumina to provide very high electron contrast. Once cut, the β-aluminas are stable and will tolerate exposure to air without degradation of the electron cut patterns. They may be used directly as masks (eg. for ion implantation). We believe they could be cut on the substrate with no damage to the underlying material.
References
6
Referenced
5
{'key': 'S0424820100074379_ref04', 'first-page': '392', 'volume': '42', 'author': 'Mochel', 'year': '1983', 'journal-title': 'APL'}
/ APL by Mochel (1983)10.1116/1.571180
- 6. This work is supported by the Department of Energy, Division of Materials Sciences through the University of Illinois Materials Research Laboratory, under contract DE-AC02-76ER01198 and carried out in the Center for the Microanalysis of Materials.
{'key': 'S0424820100074379_ref05', 'first-page': '23', 'volume-title': 'Electron Microscopy and Analysi', 'author': 'Hull', 'year': '1981'}
/ Electron Microscopy and Analysi by Hull (1981){'key': 'S0424820100074379_ref02', 'first-page': '286', 'volume': '39', 'author': 'Jackel', 'year': '1980', 'journal-title': 'AP'}
/ AP by Jackel (1980){'key': 'S0424820100074379_ref01', 'first-page': '421', 'volume-title': 'Microscope of Semiconducting Materials', 'author': 'Ahmed', 'year': '1981'}
/ Microscope of Semiconducting Materials by Ahmed (1981)
Dates
Type | When |
---|---|
Created | 5 years, 2 months ago (June 18, 2020, 8:06 a.m.) |
Deposited | 5 years, 2 months ago (June 18, 2020, 8:33 a.m.) |
Indexed | 3 years, 5 months ago (March 31, 2022, 8:04 p.m.) |
Issued | 42 years, 1 month ago (Aug. 1, 1983) |
Published | 42 years, 1 month ago (Aug. 1, 1983) |
Published Online | 5 years, 2 months ago (June 18, 2020) |
Published Print | 42 years, 1 month ago (Aug. 1, 1983) |
@article{Mochel_1983, title={Cutting of 20 Å holes and lines in metal-β-aluminas}, volume={41}, ISSN={2690-1315}, url={http://dx.doi.org/10.1017/s0424820100074379}, DOI={10.1017/s0424820100074379}, journal={Proceedings, annual meeting, Electron Microscopy Society of America}, publisher={Cambridge University Press (CUP)}, author={Mochel, M.E. and Humphreys, C. J. and Mochel, J. M. and Eades, J. A.}, year={1983}, month=aug, pages={100–101} }