DOI: 10.1016/j.tsf.2004.08.142. Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

10.1016/j.tsf.2004.08.142

Crossref journal-article

Elsevier BV

Thin Solid Films (78)

Bibliography

Kim, S. M., Shin, M. J., Choi, D. J., Lee, K. N., Hong, S. K., & Park, Y. J. (2004). Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory. Thin Solid Films, 469â470, 322â326.

Authors 6

Suk Min Kim (first)
Min Jung Shin (additional)
Doo Jin Choi (additional)
K.N. Lee (additional)
S.K. Hong (additional)
Y.J. Park (additional)

References 14 Referenced 49

10.1016/S0040-6090(99)01090-1 / Thin Solid Films by Nonaka (2000)
{'key': '10.1016/j.tsf.2004.08.142_bib2', 'series-title': 'IEEE Proceedings of Aerospace Conference, Big Sky, MT (IEEE, New York, 2001)', 'first-page': '2289', 'author': 'Maimon', 'year': '2001'} / IEEE Proceedings of Aerospace Conference, Big Sky, MT (IEEE, New York, 2001) by Maimon (2001)
H. Horii, J.H. Yi, J.H. Park, Y.H. Ha, I.G. Baek, S.O. Park, Y.N. Hwang, S.H. Lee, Y.T. Kim, K.H. Lee, U.I. Chung, J.T. Moon, Symposium on VLSI Technology Digest of Technical Papers, 2003.
10.1143/JJAP.39.2775 / Jpn. J. Appl. Phys. by Jeong (2000)
10.1116/1.1430249 / J. Vac. Sci. Technol. A by Njoroge (2002)
10.1063/1.373041 / J. Appl. Phys. by Friedrich (2000)
10.1143/JJAP.39.745 / Jpn. J. Appl. Phys. by Seo (2000)
10.1063/1.1314323 / J. Appl. Phys. by Yamada (2000)
10.1016/S0169-4332(01)00263-X / Appl. Surf. Sci. by Kyrsta (2001)
10.1143/JJAP.41.2189 / Jpn. J. Appl. Phys. by Takase (2000)
{'key': '10.1016/j.tsf.2004.08.142_bib11', 'series-title': 'Elements of X-ray Diffraction', 'first-page': '102', 'author': 'Cullity', 'year': '1978'} / Elements of X-ray Diffraction by Cullity (1978)
10.1143/JJAP.37.2098 / Jpn. J. Appl. Phys. by Kojima (1998)
10.1016/S0040-6090(02)00993-8 / Thin Solid Films by Al-Dhafiri (2002)
10.1016/S0022-0248(03)01362-9 / J. Cryst. Growth by Lee (2003)

Dates

Type	When
Created	20 years, 9 months ago (Nov. 8, 2004, 8:44 a.m.)
Deposited	6 years, 6 months ago (Feb. 1, 2019, 8:56 p.m.)
Indexed	1 month, 2 weeks ago (July 6, 2025, 7 p.m.)
Issued	20 years, 8 months ago (Dec. 1, 2004)
Published	20 years, 8 months ago (Dec. 1, 2004)
Published Print	20 years, 8 months ago (Dec. 1, 2004)

Funders 0

None

BibTeX

@article{Kim_2004, title={Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory}, volume={469–470}, ISSN={0040-6090}, url={http://dx.doi.org/10.1016/j.tsf.2004.08.142}, DOI={10.1016/j.tsf.2004.08.142}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Kim, Suk Min and Shin, Min Jung and Choi, Doo Jin and Lee, K.N. and Hong, S.K. and Park, Y.J.}, year={2004}, month=dec, pages={322–326} }

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