DOI: 10.1016/j.sse.2008.04.028. Examination of the high-frequency capability of carbon nanotube FETs

Examination of the high-frequency capability of carbon nanotube FETs

10.1016/j.sse.2008.04.028

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Pulfrey, D. L., & Chen, L. (2008). Examination of the high-frequency capability of carbon nanotube FETs. Solid-State Electronics, 52(9), 1324â1328.

Authors 2

David L. Pulfrey (first)
Li Chen (additional)

References 36 Referenced 14

{'key': '10.1016/j.sse.2008.04.028_bib1', 'first-page': '234', 'article-title': 'Critique of high-frequency performance of carbon nanotube FETs', 'author': 'Pulfrey', 'year': '2007', 'journal-title': 'Proc IEEE ESSDERC'} / Proc IEEE ESSDERC / Critique of high-frequency performance of carbon nanotube FETs by Pulfrey (2007)
10.1063/1.2743402 / Appl Phys Lett / Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors by Le Louarn (2007)
{'key': '10.1016/j.sse.2008.04.028_bib3', 'first-page': '522', 'article-title': 'Performance of carbon nanotube field-effect transistors with doped source and drain extensions and arbitrary geometry', 'author': 'Fiori', 'year': '2005', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest / Performance of carbon nanotube field-effect transistors with doped source and drain extensions and arbitrary geometry by Fiori (2005)
10.1109/TED.2006.878018 / IEEE Trans Electr Dev / A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry by Fiori (2006)
Fiori G. Private communication; August 29, 2007.
10.1109/TNANO.2005.858594 / IEEE Trans Nanotechnol / High-frequency performance projections for ballistic carbon-nanotube transistors by Hasan (2006)
10.1109/TNANO.2007.906899 / IEEE Trans Nanotechnol / Limits to the signal delay in ballistic, nanoscale transistors: semi-classical and quantum results by John (2008)
10.1109/TNANO.2007.907796 / IEEE Trans Nanotechnol / Regional signal-delay analysis applied to high-frequency carbon nanotube FETs by Pulfrey (2007)
Kim S, Choi T-Y, Rabieirad L, Jeon J-H, Shim M, Mohammadi S. A poly-Si gate carbon nanotube field-effect transistor for high-frequency applications. In: Proceedings of the IEEE MTT Symposium; 2005. p. 303–6. (10.1109/MWSYM.2005.1516586)
10.1109/LED.2006.879042 / IEEE Electron Dev Lett / An 8-GHz fT carbon nanotube field-effect transistor for gigahertz range applications by Bethoux (2006)
10.1002/pssa.200675325 / Phys Status Solidi A / High-frequency performance of multiple-channel carbon nanotube transistors by Narita (2007)
{'key': '10.1016/j.sse.2008.04.028_bib12', 'first-page': '241', 'article-title': 'Record RF performance of sub-46nm NFETs in microprocessor SOI CMOS technologies', 'author': 'Lee', 'year': '2005', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest / Record RF performance of sub-46nm NFETs in microprocessor SOI CMOS technologies by Lee (2005)
10.1063/1.2149510 / Appl Phys Lett / 12.5nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fmax=340GHz by Hafez (2005)
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10.1103/PhysRevB.73.125346 / Phys Rev B / Electronic structure of [100]-oriented free-standing InAs and InP nanowires with square and rectangular cross-sections by Persson (2006)
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10.1109/TNANO.2005.858603 / IEEE Trans Nanotechnol / Method for predicting fT for carbon nanotube FETs by Castro (2005)
10.1109/TNANO.2006.876916 / IEEE Trans Nanotechnol / Dependence of DC characteristics of CNT MOSFETs on bandstructure models by Koswatta (2006)
10.1002/pssa.200566122 / Phys. Status Solidi A / Error analysis of boundary-condition approximations in the modeling of coaxially gated carbon nanotube FETs by McGuire (2006)
10.1063/1.2011788 / Appl Phys Lett / Performance of 2nm gate length carbon nanotube field-effect transistors with source/drain underlaps by Alam (2005)
10.1063/1.2218764 / J Appl Phys / Dielectric sensitivity of a zero Schottky-barrier, 5nm gate, carbon nanotube field-effect transistor with source/drain underlaps by Alam (2006)
Castro LC. Unpublished data.
10.4028/www.scientific.net/SSP.121-123.693 / Solid State Phenom / High-frequency capability of Schottky-barrier carbon nanotube FETs by Castro (2007)
10.1109/TNANO.2005.858601 / IEEE Trans Nanotechnol / Assessment of high-frequency performance of carbon nanotube FETs by Guo (2005)
{'key': '10.1016/j.sse.2008.04.028_bib25', 'first-page': '541', 'article-title': 'Improving DC and AC characteristics of ohmic contact carbon nanotube field-effect transistors', 'author': 'Pourfath', 'year': '2005', 'journal-title': 'Proc ESSDERC'} / Proc ESSDERC / Improving DC and AC characteristics of ohmic contact carbon nanotube field-effect transistors by Pourfath (2005)
10.1109/TED.2006.882034 / IEEE Trans Electron Dev / Effect of phonon scattering on intrinsic delay and cut off frequency of carbon nanotube FETs by Yoon (2006)
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Pulfrey DL, John DL, Castro LC. In: Proceedings of the 13th International Workshop on Phys Semiconductor Dev; 2005. p. 7–13.
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10.1109/55.61781 / IEEE Electron Dev Lett / Collector signal delay in the presence of velocity overshoot by Laux (1990)

Dates

Type	When
Created	17 years, 2 months ago (June 21, 2008, 4:14 a.m.)
Deposited	2 years, 3 months ago (May 18, 2023, 6:38 p.m.)
Indexed	2 years, 2 months ago (June 24, 2023, 10:52 p.m.)
Issued	17 years ago (Sept. 1, 2008)
Published	17 years ago (Sept. 1, 2008)
Published Print	17 years ago (Sept. 1, 2008)

Funders 0

None

BibTeX

@article{Pulfrey_2008, title={Examination of the high-frequency capability of carbon nanotube FETs}, volume={52}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/j.sse.2008.04.028}, DOI={10.1016/j.sse.2008.04.028}, number={9}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Pulfrey, David L. and Chen, Li}, year={2008}, month=sep, pages={1324–1328} }

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    }
  },
  "alternative-id": [
    "S0038110108001408"
  ],
  "URL": "http://dx.doi.org/10.1016/j.sse.2008.04.028",
  "relation": {},
  "ISSN": [
    "0038-1101"
  ],
  "subject": [],
  "container-title-short": "Solid-State Electronics",
  "published": {
    "date-parts": [
      [
        2008,
        9
      ]
    ]
  }
}