DOI: 10.1016/j.sse.2003.09.029. Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit

Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit

10.1016/j.sse.2003.09.029

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Curatola, G., Fiori, G., & Iannaccone, G. (2004). Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit. Solid-State Electronics, 48(4), 581â587.

Authors 3

G. Curatola (first)
G. Fiori (additional)
G. Iannaccone (additional)

References 23 Referenced 31

International Technology Roadmap for Semiconductors 2001, Semiconductor Industry Association, San José, USA, Available from <http://public.itrs.net>
2002 Update of the International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San José, USA, Available from <http://public.itrs.net>
{'key': '10.1016/j.sse.2003.09.029_BIB3', 'first-page': '553', 'article-title': 'Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?', 'author': 'Frank', 'year': '1992', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. / Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go? by Frank (1992)
10.1063/1.357263 / J. Appl. Phys. / Ballistic metal–oxide–semiconductor field-effect-transistor by Natori (1994)
Bude JD. MOSFET modeling into the ballistic regime, Proceedings of the International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD) 2000. p. 23–6 (10.1109/SISPAD.2000.871197)
Lundstrom M, Ren Z, Datta S. Proceedings of the International Conference of the Simulation of Semiconductor Processes and Devices (SISPAD) 2000. p. 1–5
10.1109/16.887013 / IEEE Trans. Electron Dev. / Density-gradient analysis of MOS tunneling by Ancona (2000)
10.1109/16.902727 / IEEE Trans. Electron Dev. / Quantum device simulation with the density-gradient model on unstructured grids by Wettstein (2001)
10.1109/16.992871 / IEEE Trans. Electron Dev. / Macroscopic simulation of quantum mechanical effects in 2D MOS devices via the density gradient method by Connelly (2002)
10.1109/16.678567 / IEEE Trans. Electron Dev. / Self-consistent 2D model for quantum effects in nMOS transistors by Spinelli (1998)
10.1109/16.870562 / IEEE Trans. Electron Dev. / Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs by Abramo (2000)
10.1109/16.974744 / IEEE Trans. Electron Dev. / Two-dimensional quantum effects in nanoscale MOSFETs by Pirovano (2002)
10.1063/1.1519349 / Appl. Phys. Lett. / Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistor by Fiori (2002)
10.1006/spmi.2000.0920 / Superlattices Microstruct. / Nanoscale device modeling: The Green’s function method by Datta (2000)
{'key': '10.1016/j.sse.2003.09.029_BIB15', 'first-page': '715', 'article-title': 'The ballistic nanotransistor: A simulation study', 'author': 'Ren', 'year': '2000', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. / The ballistic nanotransistor: A simulation study by Ren (2000)
{'key': '10.1016/j.sse.2003.09.029_BIB16', 'first-page': '107', 'article-title': 'Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green’s function formalism', 'author': 'Ren', 'year': '2001', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. / Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green’s function formalism by Ren (2001)
10.1063/1.1432117 / J. Appl. Phys. / Two-dimensional quantum mechanical modeling of nanotransistors by Svizhenko (2000)
10.1016/S0038-1101(01)00117-4 / Solid-State Electron. / Quantum transport in the cylindrical sub-0.1 μm silicon-based MOSFET by Balaban (2002)
10.1063/1.1533108 / J. Appl. Phys. / Quantum transport in a nanosize silicon-on-insulator metal–oxide–semiconductor field-effect transistor by Croitoru (2003)
10.1088/0957-4484/13/3/311 / Nanotechnology / The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: A three-dimensional simulation by Fiori (2002)
Home page of the well tempered MOSFET at MIT: Available from <www.ece.mit.edu/Well>
10.1088/0957-4484/13/3/306 / Nanotechnology / Quantum confinement in silicon–germanium electron waveguides by Curatola (2002)
Iannaccone G, Curatola G. NANOTCAD2D on the PHANTOMS nanotechnology hub: Available from <www.phantomshub.com>

Dates

Type	When
Created	21 years, 8 months ago (Dec. 4, 2003, 8:59 a.m.)
Deposited	6 years, 6 months ago (Feb. 16, 2019, 8:20 a.m.)
Indexed	1 year, 1 month ago (July 8, 2024, 5:57 p.m.)
Issued	21 years, 4 months ago (April 1, 2004)
Published	21 years, 4 months ago (April 1, 2004)
Published Print	21 years, 4 months ago (April 1, 2004)

Funders 0

None

BibTeX

@article{Curatola_2004, title={Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit}, volume={48}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/j.sse.2003.09.029}, DOI={10.1016/j.sse.2003.09.029}, number={4}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Curatola, G. and Fiori, G. and Iannaccone, G.}, year={2004}, month=apr, pages={581–587} }

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